ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics of barium titanate films prepared by laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354744
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    The growth behavior of Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 films on silicon substrates synthesized by pulsed laser deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5335-5340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The highly (110) textured Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 (PLZT) films have been successfully grown on SrTiO3(STO)-buffered silicon substrates. The films, deposited by pulsed laser deposition process, are assumed to form via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of phase transformation from amorphous phase to perovskite. The loss of Pb species from the films is thereby suppressed. The optimum dielectric constants obtained are around εr=490 for PLZT/STO/Si films deposited at 550 °C (1 mbar oxygen pressure, PO2) and post-annealed at 550 °C (1 atm PO2). The corresponding charge storage density is around Qc(approximately-equal-to)1.5 μC/cm2 at 50 kV/cm applied field strength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359289
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    SrTiO3 buffering effect on Pb1−xLaxTiO3 thin films prepared by pulsed laser deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3401-3403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of phase-pure perovskite PLT (Pb0.95La0.05Ti0.9875O3) were deposited in situ onto Si, Pt/Ti/SiO2/Si, and SrTiO3/Si substrates by pulsed laser deposition from stoichiometric targets. No Pb loss was observed in the near-surface region. The blocking of the interdiffusion between inner Si substrate and the outer PLT films by SrTiO3 buffer layer was evidenced using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS) analyses. The formation of TiO2 second phase in PLT/Pt/Ti/SiO2/Si films was indicated by XRD and SIMS spectra to be the outward diffusion of Ti atoms from the underlying Ti layer through the Pt layer, reacting with ambient O2 at the PLT-to-Pt interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116517
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    A texture study of anisotropic sintered Nd-Fe-B magnets (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3531-3533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray pole figure technique was used to study the development of magnetocrystalline texture in the sintering of Nd-Fe-B magnets. The effect of excess Nd on the texture and remanence is emphasized. It is found that a medium content of excess Nd enhances the (006) texture and remanence. However, a high content of excess Nd may deteriorate both texture and remanence, and in addition, the tilt of texture away from the prealigned direction also becomes more significant. It is believed that the floating and rotation of grains on the thick layer of liquid phase during sintering cause the deterioration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340732
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectrometric studies of SrTiO3 buffering effect on (Pb1−xLax)(Zr1−yTiy)1−x/4O3 thin films prepared by pulsed laser deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 156-158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (Pb1−xLax)(Zr1−yTiy)1−x/4O3 (5/70/30) were deposited in situ onto (100) Si, Pt/Ti/SiO2/Si, and SrTiO3/Si substrates by pulsed laser deposition from stoichiometric targets and subsequent annealing. Films grown on SrTiO3/Si exhibited desired perovskite structure. On (100) Si and Pt/Ti/SiO2/Si substrates, films exhibited a perovskite-pyrochlore mixed structure. Apparent Pb deficiency at the near-surface region was observed. Films deposited at different substrates showed variations in Si content. The buffering effect of SrTiO3 was evidenced using x-ray diffraction and secondary ion mass spectrometry analyses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113548
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Direct-current bias effect on the synthesis of (001) textured diamond films on silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (∼ 3 μm/h) by a two-step process. First, the nuclei are formed under −160 V dc bias with 3 mol % CH4/H2 at 900 °C substrate temperature and then the films are grown under −100 V dc bias with around 5–6 mol % CH4/H2 at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a and b axis of [001] textured diamond films grown under large bias voltage are aligned with a and b axes of silicon, viz. (100)diamond(parallel)(100)Si and [110]diamond(parallel)[110]Si. The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non-[001] grains due to the electron emission under bias. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114732
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 554-556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selected area deposition of diamond films on silicon substrates was successfully achieved using the patterned Pt layer as a nucleation inhibitor in the chemical vapor deposition process. The planar diamond film array thus made possesses good electron field emission properties, that is, emission current density of (Je)Si=150 μA/cm2 (under 23.6 V/μm) and turn on field of (Eo)Si=10 V/μm. Precoating a thin Au layer (20 nm) on a Si surface further increased the emission current density to (Je)Au/Si=960 μA/cm2 (under 23.6 V/μm) with (Eo)Au/Si=10 V/μm. The effective work functions (φ) estimated by Fowler–Nordheim plots of the I–V characteristics are (φ)Si=0.059 eV and (φ)Au/Si=0.085 eV. The emission properties of both planar diamond film arrays satisfy the requirement for applying as the electron emitters in the flat panel displays. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119607
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...