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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoluminescence excitation studies on GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3475-3478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and PL excitation (PLE) experiments on a GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well are reported. In PLE, the seven peaks, four related to the heavy-hole coupled and the rest to the light-hole coupled excitonic states, are observed. The positions of seven peaks observed in PLE are in good agreement with the calculated results of multi-band envelope function approximation using the transfer matrix method. The result of the temperature-dependent PL above 100 K shows that, even though the wavefunctions are localized in different wells separated by 8 monolayer barrier, the heavy-hole coupled excitons in the two lowest levels are in thermal equilibrium. The observed activation energy is equal to the difference between the two levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354524
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  • 2
    Electronic Resource
    Electronic Resource
    Surface hardness enhancement in ion-implanted amorphous carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1480-1484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of producing carbon nitride has been studied by ion implantation into amorphous carbon. Thin films were formed with 100 keV N+ or 80 keV C+ ions at various target temperatures and ion doses. The apparent surface hardness measured by nanoindentation with load-displacement data shows an optimum value of 22.3±0.4 GPa with the ion dose of 2×1017 N+/cm2 implanted at −100 °C, while the hardness of the unimplanted amorphous carbon is 6.0±0.2 GPa. Self-implantation by carbon also produces similar hardness enhancement with a narrow temperature window. The maximum enhanced surface hardness is well correlated with the asymmetric diffuse peak at around 1500 cm−1 in Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363017
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  • 3
    Electronic Resource
    Electronic Resource
    Diamondlike carbon deposition on silicon using radio-frequency inductive plasma of Ar and C2H2 gas mixture in plasma immersion ion deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2423-2425 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon (DLC) was deposited on silicon using a plasma immersion ion deposition (PIID) method. Inductive radio-frequency plasma sources were used to generate Ar and C2H2 plasmas at low gas pressures ranging from 0.04 to 0.93 Pa. The film stress and hardness were sharply dependent upon bias voltage at an operating pressure of 0.04 Pa. A maximum hardness of 30 GPa and compressive stress of 9 GPa was observed at a pulsed bias of −150 V bias (carbon energy of 80 eV). The mechanical properties of DLC films are correlated with UV Raman peak positions which infer sp3-bonded carbon contents. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122469
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  • 4
    Electronic Resource
    Electronic Resource
    High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1863-1865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high quality In0.53Ga0.47As Schottky barrier diode fabricated by using a thin graded superlattice (SL) of In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy is reported for the first time in this letter. The effective Schottky barrier heights of ∼0.71 and ∼0.60 eV were obtained for the Au- and Cr-Schottky contacts, respectively. Excellent current-voltage and capacitance-voltage characteristics were obtained for these diodes. The graded InGaAs/InAlAs SL structure allows one to circumvent the problem of carrier pileup associated with abrupt heterostructures, and hence is advantageous for forming Schottky contacts on InGaAs for high-speed optoelectronic device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101261
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  • 5
    Electronic Resource
    Electronic Resource
    Strings, commensurate and incommensurate vortices in XY models (invited) (abstract) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3612-3612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A class of simple, translationally invariant, nearest-neighbor, isotropic XY models that possess novel topological defects will be presented.1,2 As the first example, I shall present a model that exhibits, in addition to integer vortices, half-integer-vortex, and "string'' excitations. The interaction between the half-integer vortices is a superposition of the usual logarithmic Coulomb potential and a linear potential mediated by the strings. Due to these new excitations the system possesses a rich phase diagram. As the second example, I shall present a model that supports commensurate and incommensurate vortices. Due to a novel ground-state degeneracy, the "charges'' of the incommensurate vortices are fixed by their cost in zero-point entropy and are independent of the parameters in the Hamiltonian. Again, as a result of these new defects the model exhibits a very rich phase diagram.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338689
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of DX center and spatial distribution of electrons on the density of two-dimensional electron gas in modulation-doped AlGaAs/GaAs heterojunction structure (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3789-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equilibrium density of two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterojunction structure has been studied by considering the deep electron traps (i.e., DX center) in doped AlGaAs layer, the spatial distribution of electrons in three conduction-band minima (Γ, L, and X), and the heavy doping effect. It is shown that the amount of conduction band-bending increases and the equilibrium density of two-dimensional electron gas decreases significantly as a result of incorporating these effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337546
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