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  • 1
    Electronic Resource
    Electronic Resource
    Collisional and radiative processes in high-pressure discharge plasmas : Review,Tutorial and Invited Papers from the 43rd Annual Meeting of the APS Division of Plasma Physics (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 2399-2404 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Discharge plasmas at high pressures (up to and exceeding atmospheric pressure), where single collision conditions no longer prevail, provide a fertile environment for the experimental study of collisions and radiative processes dominated by (i) step-wise processes, i.e., the excitation of an already excited atomic/molecular state and by (ii) three-body collisions leading, for instance, to the formation of excimers. The dominance of collisional and radiative processes beyond binary collisions involving ground-state atoms and molecules in such environments allows for many interesting applications of high-pressure plasmas such as high power lasers, opening switches, novel plasma processing applications and sputtering, absorbers and reflectors for electromagnetic waves, remediation of pollutants and waste streams, and excimer lamps and other noncoherent vacuum-ultraviolet light sources. Here recent progress is summarized in the use of hollow cathode discharge devices with hole dimensions in the range 0.1–0.5 mm for the generation of vacuum-ultraviolet light. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1449464
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial GexSi1−x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 230-232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial GexSi1−x alloy layers have been formed by pulsed laser induced mixing of pure germanium films and Si (100) substrates. Ge films 50–200 A(ring) thick are electron beam evaporated onto Si (100) under ≤1×10−7 Torr vacuum. The near surface of the sample then undergoes a rapid melt and regrowth process using 2–10 pulses from a XeCl excimer laser. The laser has a 37-ns pulse width at 308 nm and its energy density of 0.5–1.5 J/cm2 is precisely homogenized into a 4×4 mm square area. The alloy layers are 250–1600 A(ring) thick, have a Ge fraction x=2.5–19%, and exhibit excellent crystallinity as evaluated by MeV ion channeling and lattice resolution cross-sectional transmission electron microscopy. Unlike layer growth by molecular beam epitaxy, this approach is insensitive to minor levels of contamination because the original Ge/Si interface is melted through during the laser processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99528
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  • 3
    Electronic Resource
    Electronic Resource
    Crystallinity, strain, and thermal stability of heteroepitaxial Si1−xGex/Si (100) layers created using pulsed laser induced epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 769-771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxy of Si1−xGex/Si alloy layers on Si (100) substrates has been achieved using pulsed laser induced epitaxy (PLIE). The energy of 1 to 20 pulses from a spatially homogenized XeCl excimer laser beam is used to melt a structure consisting of electron-beam evaporated Ge on Si (100) substrates. Alloy films with different Ge fractions are investigated and films with up to 21% Ge content are found to exhibit excellent crystallinity, as confirmed by MeV-ion channeling along the 〈100〉 direction. MeV-ion channeling is also used to determine the level of strain in the layers. This is done by comparing angular yield curves around the 〈110〉 direction for the substrate and alloy layer. The strain values obtained match with calculations for an ideally strained layer state. The strain is also measured for layers that have been subjected to different thermal cycles. A high level of strain is preserved in the alloy layer even after heating to 950 °C for 1 h. This unusual thermal stability is believed to be due to two process features, the ultrarapid nature of the process and the interfacial grading of the Ge fraction created during the melt-regrowth process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107793
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  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxial Si/Si1−xGex/Si structures produced using pulsed UV-laser processing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality heteroepitaxial regrowth of arsenic-implanted a-Si on Si1−xGex layers with Ge fractions between 0 and 0.2 is accomplished using pulsed laser induced epitaxy (PLIE). The structures of boron-doped Si1−xGex on Si(100) are created beforehand using a combination of (PLIE) and gas immersion laser doping. A small amount of Ge and B backdiffusion from the Si1−xGex film into the top Si layer is observed. During the laser pulse, the implanted arsenic diffuses up to the maximum melt depth so that melt depth and junction depth coincide. The a-Si is sputter deposited to a thickness of 900 A(ring), and the As is implanted to a dose of 5×1014 cm−2 at 40 keV. A single XeCl excimer laser pulse with an energy fluence to be selected between 0.6 and 0.8 J/cm2 is sufficient to heteroepitaxially regrow the a-Si and activate the implanted arsenic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112893
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  • 5
    Electronic Resource
    Electronic Resource
    Resistless, area-selective ultrashallow P+/N junction fabrication using projection gas immersion laser doping (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2320-2322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective fabrication of ultrashallow p+/n junctions in silicon using projection gas immersion laser doping is reported. The method offers substantial improvement and simplification in junction formation to integrated circuit manufacturers, since several processing steps required for conventional doping techniques like ion implantation are eliminated. Spatially selective incorporation of boron into silicon without the use of any masking layer on the wafer surface is achieved. A pulsed excimer laser beam is patterned using a chromeless reticle and the pattern is transferred through a projection system onto a wafer that is kept in a BF3 dopant gas ambient. The depth of the fabricated junctions is 60 nm with a surface concentration of 5×1019 cm−3. The vertical and lateral distribution of boron in silicon after patterned laser processing is investigated using secondary ion mass spectroscopy (SIMS) and time-of-flight SIMS (ToF-SIMS). Vertical and lateral dopant profiles are steep and clearly resolved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115844
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