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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3092-3096 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the time variation of 147 nm vacuum ultraviolet (VUV) resonance emission as well as the continuum such as 152 and 173 nm VUV and the two-dimensional images of 147 nm VUV from the He–Xe discharge in a surface discharge type single alternating current (ac) plasma display panel (PDP) cell using an image intensified charge-coupled device camera. A detailed measurement of the resonance radiation exhibits a fast rising to its peak and decay with multiple time constants. The changes in decay time constants, relative intensities of resonance, and dimer radiation change with the total gas pressure as well as the Xe partial pressure implies that collisional excitation, deexcitation, and interlevel transition play important roles in determining the VUV emission characteristics. The two-dimensional images show that a weak, broad VUV emission comes out from the cathode area with a strong, narrow emission from the anode area. We have solved the He–Xe discharge reaction equations together with the two-dimensional multifluid equations for electrons and ions to explain the experimental results and elucidate the dominant kinetic pathway which leads to the VUV emission in the ac PDP cells. The time variations of the averaged Xe*(3P1) resonance atom and Xe2*(0u+,v(very-much-greater-than)0), and Xe2*(1u,v=0) dimer densities which emit 147, 152, and 173 nm VUV were compared with the measured time variation of each spectral intensities and showed very close qualitative agreements. © 1999 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7601-7605 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of N2 plasma interface treatment and atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator were investigated for the performance and the stability of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). To improve an a-Si:H/SiO2 interface, the N2 plasma treatment was carried out on the SiO2 surface. As a result, both the threshold voltage and subthreshold voltage swing were decreased remarkably. The high performance of a-Si:H TFTs was achieved with a field-effect mobility of 1.27 cm2/V s, threshold voltage of 3.5 V, and subthreshold voltage swing of 0.4 V/decade. For both positive and negative gate bias stresses, the threshold voltage was shifted in the positive direction and was dominated by the defect creation near the a-Si:H/SiO2 interface. There was little charge trapping into the APCVD SiO2 gate insulator. For the positive gate bias and time stress, the threshold voltage shifts were smaller than those of the conventional a-Si:H TFTs with the a-Si:H/SiNX interface. © 1994 American Institute of Physics.
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the time integrated vacuum ultraviolet (VUV) emission spectra of He–Ne–Xe gas mixture from a surface type alternating current (ac) plasma display panel cell. The measured emission lines are the resonance line (147 nm) from Xe*(1s4), the first continuum (150 nm) and the second continuum (173 nm) from Xe dimer excited states. The relative intensities of VUV spectral lines from Xe* and Xe2* are dependent on the He/Ne mixing ratio as well as the Xe partial and total pressure. The intensity of 147 nm VUV increases with the Ne content increase and Xe2* molecular emission increases with the He content increase. Infrared (IR) spectra and the time variation of VUV were measured to explain the reaction pathway and the effect of the mixing ratio of He/Ne on the spectral intensity. A detailed study for the decay time shows that the decay time of 147 nm has two time constants and the radiation of 150 and 173 nm results mainly from Xe*(1s5). The IR spectra shows that the contribution from Xe**(〉6 s) to Xe*(1s5) and Xe*(1s4) in He–Xe is different from that of Ne–Xe. The change of IR intensity explains the spectral intensity variations of He–Xe and Ne–Xe discharge. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 5200-5207 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorbed state of thiophene on Si(100)-(2×1) surface at 300 K has been investigated using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and ultraviolet photoelectron spectroscopy (UPS). (2×1) LEED pattern at 300 K is sustained after the saturated exposure of thiophene, and the saturation coverage is estimated to be ∼0.6 by AES, suggesting that thiophene molecule is chemisorbed molecularly on the Si(100) surface most likely by σ bonds between C and Si atoms. UPS spectrum for the chemisorbed thiophene shows not only the π orbital shift but also the σ orbital shift. Semiempirical PM3 calculations based on the cluster model propose that the thiophene molecule adsorbs on the Si(100)-(2×1) surface by forming di-σ bonds between C atoms of thiophene and Si atoms of the surface. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2362-2363 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (Vth) shift of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) have been investigated for the atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator. For both positive and negative gate bias stress, the threshold voltage was shifted in the positive direction and was dominated by the defect creation near the a-Si:H/SiO2 interface. There was little charge trapping into the APCVD SiO2 gate insulator under the gate bias stress. For the positive gate bias stress, the threshold voltage shifts of a-Si:H TFTs with the a-Si:H/SiO2 interface were smaller than those of the conventional a-Si:H TFTs with the a-Si:H/SiNx interface.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 775-776 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the performance improvement of hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) using atmospheric pressure chemical vapor deposition (APCVD) SiO2 as a gate insulator. The threshold voltage and the subthreshold swing decrease remarkably by N2 plasma treatment on the APCVD SiO2 surface even though the field effect mobility changes little, indicating that the interface state density around the Fermi level is reduced significantly by N2 plasma treatment. We obtained the high performance a-Si:H TFT with the field effect mobility of 1.25 cm2/V s, the threshold voltage of 3.5 V and the subthreshold swing of 0.45 V/dec.
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  • 7
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Anions of mixed cluster between carbon dioxide (CO2) and pyridine (C5H5N, denoted by Py), each possessing a negative adiabatic electron affinity, were studied. The minimum size cluster anion was the 1:1 complex of [(CO2)1(Py)1]−, which displayed highest mass spectral intensity in the series. It was shown by photoelectron spectroscopy that [(CO2)1(Py)1]− is not a typically expected ion–molecule complex of the type (CO2)1−(Py)1 or (CO2)1(Py)1−. Ab initio calculation in the UHF/6-311++G** level revealed that [(CO2)1(Py)1]− is indeed a totally new anion of the type (C5H5N-CO2)− with a planar C2v structure, bound by an intermolecular bond of a strongly covalent character. The calculation predicted 1.24 eV for the vertical detachment energy of this anion, which is in reasonably good agreement with the measured value of 1.46 eV by photoelectron spectroscopy. A Mulliken analysis showed that the excess negative charge is fully delocalized throughout the entire molecular frame. Further calculation on intramolecular rotational barrier predicted a considerable barrier height of ∼0.68 eV, which could be due to an additional, weak π-bond character of the newly formed C–N σ-bond. Such extra π-bond network was suggested to provide a path for the charge delocalization and thus lead to the stability of the anion core. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 4041-4050 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoelectron spectroscopy was carried out for mass-selected anion clusters of pyridine (C5H5N=Py) up to (Py)13−. The smallest anion cluster observed was (Py)4−, which exhibited two distinctly different photoelectron bands arising from dipole-bound and valence electron states. A mixed cluster of [(Py)3(H2O)1]− displayed similar features. No dipole-bound state was observed in the larger clusters of neat pyridine, (Py)5–13−, which were interpreted as solvated clusters of pyridine molecular anion, Py−(Py)4–12. Threshold electron binding energies were measured as the upper limit value of adiabatic electron affinities. They increased monotonically from 0.33 eV for the cluster size of n=4 to 1.02 eV for n=13. But their incremental change showed a large drop at n=8, as did the incremental change in vertical detachment energy, which was viewed as due to the completion of the first solvation shell at n=7. The energetics of anion solvation suggested nearly pure electrostatic interactions at play. A boundary was drawn on the adiabatic electron affinity of the pyridine molecule between −0.67 and −0.15 eV. Under a very high laser fluence condition, multiphoton processes were found to occur that lead to photofragmentation followed by photodetachment. Photofragmentation of (Py)5,6− yielded photofragments which revealed the same features as the dipole-bound state of (Py)4−. This was taken as evidence for the existence of dipole-bound excited states of diffuse orbital character in these larger clusters. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 9656-9659 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Coexistence of dipole-bound and valence electron states was observed by photoelectron spectroscopy in pyridine tetramer anion despite the fact that pyridine itself does not bind electrons by either mechanism. The photoelectron yield for the two states showed distinctly different laser polarization dependence. The fact that these two states have rather disparate thermodynamic stabilities suggests that there may exist an energy barrier separating the two forms in configuration space of the cluster. © 1998 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 4477-4481 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Mass spectrometric and anion photoelectron spectroscopic studies of homogeneous naphthalene cluster anions, (Nph)n=2–7−, were conducted to characterize the nature of their anionic cores. The smallest stable species in this series was found to be the naphthalene dimer anion. The vertical detachment energies of naphthalene clusters, n=2–7, were determined and found to increase smoothly with cluster size. By extrapolation, the vertical detachment energy of the isolated naphthalene molecule was found to be −0.18 eV, in agreement with its adiabatic electron affinity value from literature. The strong similarity between the spectral profiles of (Nph)2− and (Nph)1−(H2O)1 implied that (Nph)2− possesses a solvated monomeric anion core. All of the naphthalene cluster anions studied here were interpreted as having monomer anion cores. © 2002 American Institute of Physics.
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