Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1083-1085
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Making use of the photorefractive effect, we have developed a versatile method of imaging various crystal properties of semi-insulating compound semiconductors. The magnitude and time evolution of refractive index gratings are monitored via diffraction. The observed diffraction is directly related to the electric fields present, and quantitative information concerning the spatial variation of dark conductivity, photoconductivity, and deep level absorption can be extracted. Wafers of undoped GaAs and InP:Fe have been characterized in this manner, and comparisons of images are made which demonstrate the capabilities of this technique.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99218
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