ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Dielectric relaxation in amorphous thin films of SrTiO3 at elevated temperatures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1914-1919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and frequency dispersion of dielectric permittivity was investigated on thin amorphous films of SrTiO3 prepared by a sputtering method using neutralized argon-ion beams. The amorphous SrTiO3 films deposited on glass substrates exhibited a marked dielectric relaxation at temperatures 500–800 K in a frequency range 0.1–50 kHz. This behavior was explained based on a dipolar relaxation of the Cole–Cole type with the static dielectric constant ε's(approximately-equal-to)380, the constant at high frequency ε'∞(approximately-equal-to)35, and the distribution parameter of the relaxation time β(approximately-equal-to)0.8. The analysis of the temperature dependence of relaxation time gave the activation energy for the relaxation of about 1.08 eV and the characteristic relaxation time of the order of 10−12 s. In the temperature range where strong relaxation occurred, a semiconductor-type conduction having the activation energy of about 0.84 eV became dominant. A correlation between the mechanisms of the dielectric relaxation and the thermally activated motions of ionized defects in the amorphous structure is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360228
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Point defects in irradiated Li3VO4 single crystal (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2339-2342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation-induced defects in a new second harmonic generation material, lithium vanadate single crystal, have been studied by electron paramagnetic resonance (EPR) and optical absorption measurements. EPR detects two intense signals due to intrinsic O− and impurity-associated CO−3 trapped-hole centers at 77 K, but no such signal in the case of trapped-electron centers. The EPR signal of impurity Fe3+ ions is suppressed by 77 K irradiation. Low-temperature irradiation produces three optical absorption bands peaking at 3.14, 2.0, and 1.56 eV. It has been concluded that some of the free electrons produced by irradiation are trapped by Fe3+ ions at low temperatures. After annealing at room temperature all the optical absorption bands disappear, although the EPR signals of CO−3 trapped-hole centers and unidentified electron-type centers at g=1.96 remain stable up to 330 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359541
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...