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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4553-4557 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical analysis and numerical modeling indicate that, under high fields, the director of a thin region of liquid crystal close to the wall of a twisted nematic cell returns to the "easy" axis on the interface. Polarization conversion reflectivity signals are recorded for half-leaky guided modes from a twisted nematic cell subject to high ac fields. By fitting model theory to reflectivities recorded for a particular region of incidence angles, the director twist at the cell walls is deduced. In the high-field limit, this then gives the original director alignment axis, the easy axis, at the wall of a twisted nematic cell. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1666-1668 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of diamondlike carbon (DLC) films coated by pulsed laser deposition technique on the electron emission characteristics of Mo tips is examined. Turn-on voltage (V0) was lowered from 40 V for Mo tips to 22 V for DLC coated Mo tips and maximum anode current (IA) was increased from ∼44 μA for Mo tips to ∼2.0 mA for DLC coated Mo tips. Maximum anode current (IA) for the DLC coated Mo tips, however, decreased during operation. Raman spectroscopy and selected area diffraction (SAD) in transmission electron microscopy (TEM) revealed that the degradation of electron emission behavior can be ascribed to the conversion of sp3-bonds, characteristic for diamond, to sp2-bonds, characteristics for graphite. The transformation of the structure is assumed to be induced by the local heat from the DLC coatings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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