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  • 1
    Electronic Resource
    Electronic Resource
    Surface effects on carrier dynamics: photoconductivity studies on Si (111) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4983-4990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We correlate photoconductivity with surface characterization in order to probe the influence of different surface properties of Si (111) on electron-hole dynamics. Photoconductivity data show that the carrier recombination is influenced strongly by surface structure and chemistry as well as by trace imperfections which are undetectable by conventional surface characterization techniques. Results on the Si(111):As (1×1) surface indicate carrier recombination at this surface is negligible, in contrast to the (7×7) reconstructed surface, where surface recombination is fast, with a surface recombination velocity measured to be ≥2×106 cm/s. We also investigate the effect of sputter induced disorder and compare our finding with results from other techniques. Combining our results and the present understanding of the (7×7) electronic structure, we estimate the carrier capture cross section for dangling bonds to be ∼10−15 cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350597
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  • 2
    Electronic Resource
    Electronic Resource
    Gas–surface interactions on InP monitored by changes in substrate electronic properties (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 5146-5153 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic properties of compensated InP crystals can be used to sensitively monitor gas–surface interactions. When a gas is adsorbed on these low carrier density semiconductors both the conductance and minority carrier lifetime exhibit large changes which we interpret in terms of band bending. Changes of greater than 50% in the bulk-averaged conductance of Fe-compensated semi-insulating InP crystals have been measured for adsorption of ∼0.5 monolayers of Cl2. Using modulated NO2 molecular beams the conductance changes are demonstrated to be fast (〈1 ms to steady state) so as to be capable of yielding quantitative rate information about the gas–surface interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456557
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  • 3
    Electronic Resource
    Electronic Resource
    Imaging InGaAsP quantum-well lasers using near-field scanning optical microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7720-7725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of near-field scanning optical microscopy (NSOM) to the characterization of InGaAsP multiquantum-well lasers is reported. Collection mode images are collected at varying drive currents from well below to well above the threshold current. The high resolution of NSOM (∼λ/20) provides a detailed mapping of the laser output from the active region as well as additional output from the surrounding mesa. Spectral analysis of the image shows that the extra emission is due to InP electroluminescence. In addition to the emission characteristics of the laser it is also possible to detect local heating of the laser facet via thermal expansion. Topographical images are achieved simultaneously with NSOM images by digitizing the feedback signal which maintains a constant tip-surface gap. It is shown that these data have direct implications on device performance and problems associated with carrier leakage and nonradiative defects. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357946
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-hole pair creation at a Ge(100) surface by ground-state neutral Xe atoms (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2213-2215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly measured the excitation of electron-hole pairs at a crystal surface by ground-state neutral atoms. Utilizing seeded molecular beam techniques we have scattered hyperthermal (1–6 eV) Xe atoms from the (100) face of a Ge p-i-n diode and recorded the current transient induced due to the scattering process. We find the product of the excitation and collection probability to be ∼10−4 over a range of kinetic energies 2〈EXe(eV)〈6. The excitation of electron-hole pairs constitutes a small portion of the massive energy loss (ΔE/E∼70%) of the Xe atom to the crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336361
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  • 5
    Electronic Resource
    Electronic Resource
    Surface morphology of related GexSi1−x films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1293-1295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the surface morphology of relaxed, compositionally graded GexSi1−x structures, to illustrate the influence of defect-related strain fields on film growth. Quantitative topographic measurements via scanning force microscopy show that the roughness associated with the cross-hatch patterns, due to underlying misfit dislocations beneath the surface, increases as the final Ge concentration or the grading rate increases. We further show that strain fields arising from the termination of threading dislocations at the surface result in shallow depressions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107569
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  • 6
    Electronic Resource
    Electronic Resource
    Near-field photoconductivity: Application to carrier transport in InGaAsP quantum well lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2654-2656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new contrast method in near-field scanning optical microscopy in which the near-field probe is used to excite photocurrent in a semiconductor sample is described and demonstrated. The use of near-field optics results in an order-of-magnitude improvement in spot size and a fivefold improvement in resolution over previous methods of photocurrent imaging. The application of this near-field photoconductivity technique to a multiquantum well laser provides direct visualization of carrier transport throughout the structure, yielding information on growth inhomogeneities, carrier leakage and isolation, and the overall quality of p-n junctions. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112593
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  • 7
    Electronic Resource
    Electronic Resource
    Extraction of kinetic parameters in temperature programmed desorption: A comparison of methods (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 6725-6732 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An investigation of the temperature programmed desorption (TPD) of CO and D2 from Ni(111) has been carried out. It has been shown that a differential method for the extraction of the kinetic parameters, threshold temperature programmed desorption (TTPD), can be applied with accuracy near the limit of zero coverage. In this limit, agreement is found between integral and differential methods for kinetic parameter evaluation. The factors which limit the applicability of TTPD are explored and a method to verify its proper application is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453409
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  • 8
    Electronic Resource
    Electronic Resource
    Atom–surface scattering dynamics at hyperthermal energies (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 1796-1807 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report molecular beam scattering of hyperthermal Xe atoms over an energy range 1〈Ei(eV)〈10 from single crystal surfaces of GaAs(110), Ag(100), and Ge(100). The angular distributions from the corrugated surfaces show sharp backscattered rainbow maxima related to the topography of the crystal surface. In contrast the smooth surfaces yield quasispecular lobes suggestive of structure scattering. The large energy loss for all surfaces scales on average with the energy of local normal motion. A simple binary interaction model is developed which accounts for many of the phenomena observed from corrugated surfaces. With the aid of a comparison classical trajectory study, these results provide some understanding of the mechanism by and extent to which a solid can dissipate the energy of a hyperthermal collision.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453192
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