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  • American Institute of Physics (AIP)  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1566-1568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga0.5In0.5P grown lattice matched to GaAs by metalorganic chemical vapor deposition (MOCVD) exhibited domains of varying degrees of column III sublattice ordering. Continuous-wave photoluminescence spectra were single peaked and relatively narrow, but the peak wavelengths from samples grown at low (630–670 °C) temperatures varied strongly with excitation density at low measurement temperatures, while peak wavelength did not vary for high (775 °C) temperature growth. The half width was 6.5 meV in the latter case, the narrowest reported from MOCVD-grown Ga0.5In0.5P. Time-resolved photoluminescence of partially ordered GaInP at liquid-helium temperatures is reported for the first time. For samples grown at low temperatures, the spectral peak displayed a slow (τ(approximately-greater-than)1 μs) decay at low excitation density. The decay was more rapid (τ=1.8 ns) at higher excitations and at higher photon emission energies. Possible explanations discussed include spatial separation of carriers and trapping.〈squeeze;1.6p〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103355
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  • 2
    Electronic Resource
    Electronic Resource
    InGaAs/InP multiple quantum well tunable Bragg reflector (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2971-2973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105815
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  • 3
    Electronic Resource
    Electronic Resource
    Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1824-1826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 °C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6° towards P(111〉〈111〉A, consist of nominally undoped MQWs surrounded by doped In0.49Al0.51P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In0.49Ga0.51P/In0.49(Al0.5Ga0.5)0.51P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength electro-optic modulator applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111767
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3233-3235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 μm with a maximum reflectivity exceeding 99%. We also measure current–voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114882
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  • 5
    Electronic Resource
    Electronic Resource
    Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 329-331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface normal optoelectronic devices operating at long wavelengths ((approximately-greater-than)1.3 μm), require distributed Bragg reflectors (DBRs) with a practical number (≤50) of mirror layers. This requirement implies a large refractive index difference between the mirror layers, which is difficult to achieve in the traditionally used phosphide compounds. We demonstrate a highly reflective AlAsSb/GaAsSb DBR grown nominally lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.74 μm with maximum reflectivity exceeding 98%, which is well fitted by our theoretical predictions. Atomic force microscopy and transmission electron microscopy indicate reasonable crystal quality with some defects due to an unintentional lattice mismatch to the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114202
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  • 6
    Electronic Resource
    Electronic Resource
    Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate wet thermal oxidation of an AlAsSb layer lattice matched to an InP substrate. Oxidation in an InGaAs/AlAsSb/InGaAs structure proceeds in a lateral direction, producing an oxide layer embedded between two layers of InGaAs. Auger analysis and Raman spectroscopy indicate conversion of the AlAsSb into an aluminum oxide with an elemental antimony layer at the top oxide-InGaAs interface. Scanning electron microscope cross-sectional views of partially and fully oxidized samples are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115800
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  • 7
    Electronic Resource
    Electronic Resource
    Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2870-2872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective wet oxidation of AlGaAs layers can be used to form embedded optical elements, such as buried lenses and current control apertures in vertical cavity structures. Oxidation rates of buried Al0.94Ga0.06As layers were controlled by varying the thickness of GaAs barrier layers between layers of Al0.94Ga0.06As and Al0.98Ga0.02As. This phenomenon can be attributed to the superposition of a vertical oxidation component due to species diffusing through the barrier layer and a constant lateral oxidation component. The magnitude of the vertical component is controlled by the GaAs barrier thickness, which determines the concentration of additional oxidizing species in the Al0.94Ga0.06As layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119028
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial layer thickness measurement by cross-sectional atomic force microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3353-3355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An epitaxial layer thickness measurement technique has been developed using cross-sectional atomic force microscopy (XSAFM). Cleaved and etched epitaxial heterostructures of Al0.5Ga0.5As/GaAs have been analyzed using this technique. XSAFM analysis of a 20.5 period structure of 300-A(ring)-thick Al0.5Ga0.5As/GaAs layers agreed to within 2% of x-ray diffraction data. XSAFM analysis of a structure consisting of GaAs wells ranging from ∼15 to 600 A(ring) with 300 A(ring) Al0.5Ga0.5As barriers was also performed. The XSAFM measured well thicknesses agreed quite well with photoluminescence (PL) measurements taken at 4 K. XSAFM can thus serve as a rapid alternative to conventional thickness measurement techniques such as SEM and TEM. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116055
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