Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 4154-4159
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Correlated self-diffusion in a screw dislocation in a simple cubic crystal is treated with a vacancy mechanism. First and second neighbor jumps are considered within the dislocation core and matrix functions are generated which permit the limit of an infinite dislocation length to be examined for the tight binding approximation. The correlation factor f for positive vacancy binding to the dislocation is found in the range of 0.73≥f ≥0.52 as the binding energy increases without bounds. Previous calculations for an edge dislocation showed that the correlation factor was bound by the limits 0.75≥f ≥0. Comparable calculations of the diffusion coefficient suggest that the diffusivity becomes infinitely large in the same limit in a manner similar with what happens in an edge dislocation. Namely, as the binding energy of the vacancy increases without bounds, the number of available vacancies for diffusion increases indefinitely as a result of the length of dislocation acting as a source.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337498
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