Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 293-295
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon impurities with an initial Dirac-delta-function-like distribution profile are diffused into GaAs using rapid thermal annealing. The diffusion of atomic Si is determined by a novel method of comparing experimental capacitance-voltage profiles with a corresponding self-consistent profile calculation. Capacitance-voltage profiles broaden from 30 to 137 A(ring) upon rapid thermal annealing at 1000 °C for 5 s. The diffusion coefficient and the activation energy of atomic Si diffusion in GaAs are determined to be D0=4×10−4 cm2/s and Ea=2.45 eV, respectively. The diffusion coefficient is two orders of magnitude smaller as compared to Si-pair diffusion in GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99917
|
Location |
Call Number |
Expected |
Availability |
