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  • Books
  • Articles  (63)
  • American Institute of Physics (AIP)  (35)
  • Oxford University Press  (28)
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  • Books
  • Articles  (63)
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  • 11
    Electronic Resource
    Electronic Resource
    Further evidence for the quantum confined electrochemistry model of the formation mechanism of p−-type porous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3399-3401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of p− porous silicon (PS) were formed in HF solutions of different concentrations. One type with nanoscale (NS) dimensions of about 3 nm and the other with dimensions of about 5 nm. PS samples formed in the lower concentration of HF were anodized again in the higher concentration of HF and vice versa. The photoluminescence peak position and, thus, the size of NS units of PS were found to be related to the concentration of HF in which the PS is formed, independent of the forming time. The larger NS units of PS can be further electrochemically etched by anodization, while the smaller ones cannot. These results give a confirming evidence for the quantum confined electrochemistry model of the formation mechanism of PS based on the quantum confinement effect and classical electrochemical theory [S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. 62, 642 (1993)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117272
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  • 12
    Electronic Resource
    Electronic Resource
    Rectangular and L-shaped GaAs/AlGaAs lasers with very high quality etched facets (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 493-495 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs semiconductor lasers with very high quality etched facets have been fabricated. Laser facets are formed by the chemically assisted ion beam etching technique with SiO2 as the etch mask. The threshold current densities of lasers produced with this technique are almost identical to comparable lasers with one etched and one cleaved facet. L-shaped lasers, which make use of total internal reflection, have also been fabricated. The threshold current density of L-shaped lasers is similar to that of rectangular lasers with comparable cavity length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100960
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  • 13
    Electronic Resource
    Electronic Resource
    Balanced puff valve for imploding gas-puff experiments (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1684-1686 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a fast-acting high-pressure puff valve for use in imploding gas-puff experiments is presented. By using a pressure-balanced valve design, the valve can operate at pressures up to 500 psia. Fast opening (≈200 μs) is achieved by using a fast-moving sliding hammer to open the valve. Balanced valves as well as fast-opening valves using sliding hammers are both well-known technologies; however, this design is the first one to incorporate both features in a single design resulting in a fast-acting high-pressure puff valve.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138552
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  • 14
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs-based triangular-shaped ring ridge lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1658-1660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Triangular-shaped ring ridge lasers (ridge trilasers) have been fabricated using quantum-well semiconductor laser material. The spectra of these ridge trilasers show single-wavelength operation above threshold confirming traveling-wave behavior in these lasers. Unidirectional operation is reported based on asymmetry between the clockwise and counterclockwise directions, in contrast to conventional unidirectional operation in ring lasers based on magnetic techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107228
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  • 15
    Electronic Resource
    Electronic Resource
    Etched-facet AlGaAs triangular-shaped ring lasers with output coupling (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1395-1397 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Total and partial reflection are demonstrated at the bends of V-shaped lasers. By varying the angle of incidence to the facet at the bend, the reflectivity at this facet can be changed. Two totally and one partially reflecting V-shaped lasers are combined in a unibodied structure to realize a triangular-shaped ring laser (trilaser). Trilasers are made of three sections which meet at three facets. Two of the facets provide total internal reflection while the third allows partial transmission from which light output is obtained. The Q of the resultant planar cavity is modified by geometry, without the need for facet coating. V-shaped lasers and trilasers are formed by using the chemically assisted ion beam etching technique in an AlGaAs/GaAs-based single quantum well graded-index separate confinement heterostructure material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105317
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  • 16
    Electronic Resource
    Electronic Resource
    Oxygen tracer diffusion through BaF2 and MgO overcoats on YBa2Cu3O7−Δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 724-726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The movement of oxygen through MgO and BaF2 overcoats on YBa2Cu3O7−Δ has been studied using 18O tracer diffusion techniques. By analyzing the 18O and 16O signals from secondary-ion mass spectrometry depth profiles, the motion of small concentrations of oxygen in both insulating and oxygenated hosts has been tracked. BaF2 was found to be 〈m1;37p〉transparent to oxygen diffusion while MgO blocked its motion during 10 min 500–600 °C anneals. Uncovered YBa2Cu3O7−Δ films were also found to exchange up to 90% of their oxygen during similar anneals. These results have important ramifications for reoxygenation steps during device fabrications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105377
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  • 17
    Electronic Resource
    Electronic Resource
    Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3569-3571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detection of continuous-wave terahertz (THz) radiation has been demonstrated in GaAs/AlGaAs coupled quantum well p-i-n photodiodes by intrasubband absorption. The sharp interwell tunneling resonances observed in the photocurrent are highly sensitive to temperature, and the carrier temperature increase caused by the absorption of THz radiation is found to affect the photocurrent in a qualitatively similar manner. We find that the effect results in detectivities of THz radiation around 1 mA/W for a photocurrent signal of 100 nA. We discuss the functionality of our device in the context of an "optical/THz mixer,'' where the mixing occurs between the modulation frequencies of the applied THz and visible light fields. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117248
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  • 18
    Electronic Resource
    Electronic Resource
    In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2653-2655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-time measurements of GexSi1−x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy. Parallel detection enables quantitative acquisition of low-loss spectra in a time of 〈500 μs and surface composition determination in GexSi1−x/Si(001) via Ge L2,3 core loss analysis to a precision of approximately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) has also been studied using the Sn M4,5 core loss. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120136
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  • 19
    Electronic Resource
    Electronic Resource
    Photoluminescence of ozone oxidized and HF etched porous silicon and the multiple source quantum well model (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1391-1393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon (PS) samples were alternately oxidized in an ozone atmosphere and etched in HF solution. The variation of the corresponding photoluminescence (PL) implies that there is more than one origin responsible for the PL of PS. These results are explained by a multiple source quantum well model, where the nanoscale Si units and their covering oxide layers both contribute to the PL in different situations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119902
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  • 20
    Electronic Resource
    Electronic Resource
    Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3711-3713 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric SrBi2Ta2O9 thin films have been deposited on the Bi4Ti3O12 buffered Pt/Ti/SiO2/Si substrates using the metalorganic decomposition technique at annealing temperatures ranging from 600 to 750 °C. No pyrochlore phase was found in the SrBi2Ta2O9 thin films although the Bi2Ti2O7 phase appeared in the Bi4Ti3O12 buffer layers. A SrBi2Ta2O9 film with (200) predominant orientation was formed at 650 °C. The effects of the Bi4Ti3O12 buffer layer and post-annealing temperature on the structure, surface morphology, and electrical properties of SrBi2Ta2O9 thin films were analyzed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123229
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