ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Design of slender and lightweight rehabilitation orthotics based on Lines of Non Extension (2018)
    Institute of Physics
    Details
    Publication Date: 2018-06-01
    Print ISSN: 1742-6588
    Electronic ISSN: 1742-6596
    Topics: Physics
    Published by Institute of Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2081-2091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier photovoltaic detectors have been fabricated on n-AlxGa1−xN(0≤x≤0.35) and p-GaN epitaxial layers grown on sapphire. Their characteristics have been analyzed and modeled, in order to determine the physical mechanisms that limit their performance. The influence of material properties on device parameters is discussed. Our analysis considers front and back illumination and distinguishes between devices fabricated on ideal high-quality material and state-of-the-art heteroepitaxial AlxGa1−xN. In the former case, low doping levels are advisable to achieve high responsivity and a sharp spectral cutoff. The epitaxial layer should be thin (〈0.5 μm) to optimize the ultraviolet/visible contrast. In present devices fabricated on heteroepitaxial AlxGa1−xN, the responsivity is limited by the diffusion length. In this case, thick AlxGa1−xN layers are advisable, because the reduction in the dislocation density results in lower leakage currents, larger diffusion length, and higher responsivity. In order to improve bandwidth and responsivity, and to achieve good ohmic contacts, a moderate n-type doping level (∼1018 cm−3) is recommended. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305838
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7−x (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5058-5061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We communicate a detailed study of the epitaxial growth of CeO2 on MgO. The key feature of the growth is the dependence of the in-plane orientation of the CeO2 epitaxial layer on the MgO surface morphology. Atomic force microscopic (AFM) measurements, x-ray analyses, as well as high-resolution transmission electron microscopy (HRTEM) investigations reveal that on rough substrates a cube-on-cube growth of CeO2 on MgO occurs while on smooth substrates the CeO2 unit cell is rotated around the surface normal by 45° with respect to the MgO unit cell when the deposition rate is low (∼0.3 A(ring)/s) during the first stages of growth. This growth mechanism can be used for a defined fabrication of 45° grain boundaries in the CeO2 layer by controlling the surface roughness of the MgO substrate. This report demonstrates that these 45° grain boundaries may be used to fabricate YBa2Cu3O7−x Josephson junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359734
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3337-3339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of Y-doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000–1200 °C and at an oxygen pressure of 1.5×10−1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x-ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101](parallel)MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361234
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4681-4683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN layers were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Crystal quality was assessed by atomic force microscopy and high resolution x-ray diffraction. The III/V ratio and the growth temperature, rather than thickness and growth rate, are found to be critical parameters to achieve good quality AlN layers. III/V ratios close to stoichiometry, and high growth temperatures (≥900 °C) lead to optimal AlN layers. The growth rate is barely modified when growth temperature changes from 780 to 920 °C, but the growth mode and surface roughness are strongly affected. Optimal AlN layers have full-widths at half-maximum values of 10 arcmin, and an average surface roughness of 48 Å. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366208
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Study of rapidly quenched Fe100−xMx crystalline alloys by Mössbauer effect spectroscopy (M=B, C, Al, Si, P) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4349-4351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapidly quenched, crystalline, Fe-rich Fe100−xMx system has been studied by 57Fe Mössbauer effect spectrometry. Boron and carbon alloys were found to have regions with cementite local structure. Small amounts of fcc γ-Fe were also observed in some of the cases. Furthermore, almost half of the carbon was concluded to be in interstitial solution. Upon annealing the carbon alloy, the fcc phase disappears to benefit formation of the cementite. In contrast, the alloys with aluminum, silicon, and phosphorous are substitutional solid solutions. After being annealed at 1073 K, they do not show changes in their hyperfine interactions nor in their crystalline structure. However, the lattice parameter of the alloy with phosphorous unexpectedly increased from a value below that corresponding to pure iron to another above it. These results are discussed on the basis of the metalloid solubilities in iron and their atomic sizes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338417
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Crystallization of Fe-B amorphous alloys: A NMR and x-ray study (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3231-3233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on a knowledge of the NMR spectra for FeB, Fe2B, orthorhombic Fe3B (o-Fe3B), and body-centered-tetragonal Fe3B (bct-Fe3B), the phases produced during the annealing of Fe-B amorphous alloys can be identified with greater sensitivity by NMR techniques than by x-ray diffraction. In the present work, a combination of x-ray diffraction experiments and spin-echo NMR measurements of the hyperfine field distributions for the 10B, 11B, and 57 Fe nuclei has been performed on both as-quenched and annealed Fe100−xBx (14≤x≤25) amorphous alloys. In general terms, it was found that annealing at temperatures near 400 °C resulted in crystallization products which included bct-Fe3B, while annealing at approximately 800 °C leads to the formation of o-Fe3B. The behavior of the B hyperfine field indicates that, for the Fe100−xBx amorphous alloys, an o-Fe3B-like local order is favored in the low B concentration regime, and a bct-Fe3B-like local order is favored in the high B concentration regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338912
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Two-wave mixing with gain in liquid crystals at 10.6-μm wavelength (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 26-31 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Signal-beam amplification is achieved in degenerate two-wave mixing experiments in liquid crystals at the wavelength λ=10.6 μm of the cw CO2 laser. The origin of the dynamic grating is the large thermal index change that arises when the cell operates near the phase transition temperature. Maxwell's equations are analytically solved for the calculation of the amplitude variations of the incident waves (Ip@B:pump, Is@B:signal) and of the self-diffracted wave (I−1). It is shown that energy transfer arises from the contribution of the π/2 component of the index modulation generated by the interference of (Ip,I−1). The resulting three-wave model yields good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341420
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    NMR studies in orthorhombic Fe3B1−xCx (0.1≤x≤0.4) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4358-4360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the local atomic environments of both B and Fe in Fe3B1−xCx (0.1≤x≤0.4), NMR measurements of the hyperfine field distributions for 10B, 11B, and 57Fe have been performed at 4.2 K and from 10 to 60 MHz. It was found that the 11B and 57Fe NMR frequencies do not change with C concentration. From these results, the 11B NMR frequency characteristic of orthorhombic Fe3B was unambiguously determined to be 36.3 MHz, which is in good agreement with the value obtained for the orthorhombic Fe3B phase prepared by annealing amorphous Fe80B20. Our results show that the substitution of C atoms for B atoms has a small effect on the hyperfine field at both the B and Fe nuclei as well as on the magnetic moment of the Fe atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338420
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Preparation of SrTiO3 thin films on Si(100) substrates by laser ablation: Application as buffer layer for YBa2Cu3O7 films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2228-2230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrTiO3 thin films have been deposited on Si(100) by pulsed laser ablation. The films were characterized by x-ray diffractometry, field emission scanning electron microscopy, and secondary ion mass spectrometry. The films show the (h00) or (hh0) preferential orientations depending on the substrate temperature and oxygen partial pressure during the deposition. Depth profiles indicate that films grow without an important reaction with the substrate. Superconducting YBa2Cu3O7−x thin films were successfully deposited by laser ablation on Si(100) substrates coated with SrTiO3 buffer layer. This indicates that SrTiO3 is a good material as a buffer layer for deposition of YBa2Cu3O7−x on silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108276
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...