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  • American Institute of Physics (AIP)  (150)
  • Taylor & Francis  (32)
  • Geological Society of London
  • 1
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction studies of YBa2Cu3Ox (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4798-4804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a specially designed off-axis faced magnetron sputtering chamber we have performed in situ x-ray diffraction studies of the growth of YBa2Cu3Ox films using a synchrotron light source. The orientation and rocking curve width were studied as a function of substrate temperature, O2/Ar partial pressures, and deposition rate. Growth rate was studied on SrTiO3, LaAlO3, and MgO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352093
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  • 2
    Electronic Resource
    Electronic Resource
    Antiferromagnetic form factor of Sr2CuO2Cl2 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4524-4526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction techniques have been used to study the antiferromagnetic form factor of Sr2CuO2Cl2, which has the body-centered-tetragonal (I4/mmm) K2NiF4-type structure (the same as that of tetragonal La2CuO4 but with the out-of-plane oxygens replaced by Cl and the La by Sr). The antiferromagnetic form factor was obtained at 15 K by measuring the integrated intensities of the ( (1)/(2) (1)/(2) 0), ( (1)/(2) (1)/(2) 2), ( (1)/(2) (1)/(2) 3), ( (3)/(2) (3)/(2) 0), ( (3)/(2) (3)/(2) 6), ( (3)/(2) (5)/(2) 1), ( (3)/(2) (3)/(2) 8), and ( (5)/(2) (5)/(2) 0) magnetic reflections of a single crystal of Sr2CuO2Cl2. The experimentally determined magnetic form factor is similar to that of La2CuO4. The experimental data were compared with the Cu2+ magnetic form factor and with the results of band theoretical calculations. We find that the fit to the experimental data is improved if one assumes a dipolar spin polarization on the in-plane oxygen ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344857
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  • 3
    Electronic Resource
    Electronic Resource
    Mössbauer and magnetization studies of nickel ferrites : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6287-6289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nickel ferrites have been produced by the rf plasma deposition technique for the first time. This technique has promise for large scale fine particle production of ferrites. Powder x-ray diffraction linewidth measurements show an average particle size of about 55 nm. Mossbauer measurements show the presence of both the nickel ferrite and the nickel zinc ferrite with Fe3O4 created in each ferrite production process as an impurity. Magnetization and Mössbauer measurements show evidence that the aerosol prepared samples have small particle characteristics as compared to solid state reacted bulk materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352672
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  • 4
    Electronic Resource
    Electronic Resource
    Iron substitution in Y2BaCuO5 and YBa2Cu3O7−y : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4886-4888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A few atomic percent of 57Fe has been substituted for Cu in the YBa2Cu3O7−y system. Air-annealed samples are the superconducting 1-2-3 compound YBa2Cu3−x57FexO7−y while nitrogen-annealed samples are mainly the nonsuperconducting 2-1-1 compound Y2BaCu1−x57FexO5. X–ray, Meissner effect, and thermogravimetric measurements have been made on both compounds. The site dependence has been studied and compared in these two compounds by the Mössbauer effect with the result that Fe prefers the Cu(l) site in the 1-2-3 compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348213
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  • 5
    Electronic Resource
    Electronic Resource
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348579
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  • 6
    Electronic Resource
    Electronic Resource
    Superconducting YBa2Cu3O7−δ thin films with three different orientations (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4217-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBaCuO have been prepared with (1) the a axis perpendicular to (100) SrTiO3 ; (2) the c axis perpendicular to (100) SrTiO3 ; and (3) the [110] axis perpendicular to (110) SrTiO3. Films were fabricated using a multilayer deposition technique involving three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. As deposited films, which contained polycrystalline and amorphous regions, were later annealed in a furnace under a flowing O2-H2 O atmosphere. X-ray diffraction patterns as well as scanning electron microscopy and high-resolution electron microscopy images confirm that the films are highly oriented, essentially epitaxial. The a-axis oriented film exhibits zero resistance at 90 K and a critical current density of 2.9×106 A/cm2 at 4.2 K while the c-axis oriented film exhibits a Tc of 88 K and a Jc of 0.9×107 A/cm2 at 4.2K; the Jc values were determined magnetically. The [110]-orientation film shows the sharpest transition with a transition width of 1 K and zero resistance at 85 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344932
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  • 7
    Electronic Resource
    Electronic Resource
    Subband effect on miniband transport in laterally confined superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3867-3872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Linear and nonlinear miniband electron transport through a laterally confined superlattice is investigated systematically using the balance-equation theory. Up to 21 transverse subbands with intrasubband and intersubband impurity and phonon scatterings are included. Nonlinear drift velocity and electron temperature as functions of the electric field are calculated at lattice temperatures ranging from 45 to 300 K for several sets of superlattices having different degrees of transverse confinements. With increasing the lateral cross-section diameters, linear mobility, peak drift velocity, threshold electric field, and all the other transport properties discussed exhibit significant oscillations at lattice temperatures as high as 300 K. Drastic changes in transport properties occur in GaAs-based systems when polar optic phonon scatterings set in or are prohibited due to subband structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352898
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  • 8
    Electronic Resource
    Electronic Resource
    Intense electron emission due to picosecond laser-produced plasmas in high gradient electric fields (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 888-894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond laser pulses at a wavelength of 266 nm have been focused onto a solid metal cathode in coincidence with high gradient electric fields to produce high brightness electron beams. At power densities exceeding 109 W/cm2, a solid density plasma is formed and intense bursts of electrons are emitted from the target accompanied by macroscopic surface damage. An inferred ∼1 μC of integrated charge with an average current of ∼20 A is emitted from a radio-frequency cavity driven at electric field gradients of ∼80 MV/m. In another experiment, where a dc extraction field of ∼6 MV/m is used, we observed an electron charge of ∼0.17 μC. Both results are compared with the Schottky effect and the Fowler–Nordheim field emission. We found that this laser-induced intense electron emission shares many features with the explosive electron emission processes. No selective wavelength dependence is observed in the production of the intense electron emission in the dc extraction field. The integrated electrons give an apparent quantum efficiency of ∼1.2%, which is one of the highest reported to date from metal photocathodes at these photon energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351763
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  • 9
    Electronic Resource
    Electronic Resource
    The antiferromagnetic form factor of La2NiO4 : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4860-4862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron-diffraction techniques have been used to study the antiferromagnetic form factor of a La2NiO4 single crystal at 15 K. The antiferromagnetic form factor was obtained by measuring the integrated intensities of 16 magnetic reflections. A plateau is clearly seen at low Q (up to 3 A(ring)−1) in the experimentally determined form factor, similar to those observed for La2CuO4 and Sr2CuO2Cl2. As in the case of these latter compounds, the fit of the experimental data by a Ni2+ ionic form factor is not satisfactory. The experimental data are compared with a recent spin-polarized band calculation and with a covalency model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348204
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  • 10
    Electronic Resource
    Electronic Resource
    Dislocation distribution near the crack tip of I and II modes in bulk aluminum single crystal (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 203-206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation distribution near the crack tip of I and II modes in bulk aluminum single crystal has been decorated by using the etching pit technique and then was observed by scanning electron microscopy. It has been shown that two kinds of distribution of dislocations, i.e., shielding and antishielding dislocations are found to exist near the crack tip. In addition to these, the dislocation-free zone is still observed to be between the crack tip and the plastic zone. According to Rice and Thomson [Philos. Mag. 29, 73 (1974)], the dislocation mode of the elastic-plastic crack is extended to include the antishielding dislocations as part of a crack-tip equilibrium configuration, which may be described as follows: (μb/2π) (∫−e−a+∫−c−s +∫sc+∫ae)[ f(x')/(x−x')]dx'+σa=0, when ||x||〈C, or σf, when c〈||x||〈s and e〈||x||〈a. The factors affecting the dislocation distribution are discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347751
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