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  • 1
    Electronic Resource
    Electronic Resource
    Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 880-890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum-doped zinc oxide films have been deposited on soda lime glass substrates from diethyl zinc, triethyl aluminum, and ethanol by atmospheric pressure chemical-vapor deposition in the temperature range 367–444 °C. Film roughness was controlled by the deposition temperature and the dopant concentration. The films have resistivities as low as 3.0 × 10−4 Ω cm, infrared reflectances close to 90%, visible transmissions of 85%, and visible absorptions of 5.0% for a sheet resistance of 4.0 Ω/(D'Alembertian). The aluminum concentration within doped films measured by electron microprobe is between 0.3 and 1.2 at. %. The electron concentration determined from Hall coefficient measurements is between 2.0 × 1020 and 8.0 × 1020 cm−3, which is in agreement with the estimates from the plasma wavelength. The Hall mobility, obtained from the measured Hall coefficient and dc resistivity, is between 10.0 and 35.0 cm2/V s. Over 90% of the aluminum atoms in the film are electrically active as electron donors. Scanning electron microscopy and x-ray diffraction show that the films are crystalline with disklike structures of diameter 100–1000 nm and height 30–60 nm. The films have the desired electrical and optical properties for applications in solar cell technology and energy efficient windows.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351309
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  • 2
    Electronic Resource
    Electronic Resource
    Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5381-5392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium doped zinc oxide films have been deposited in the temperature range 150 to 470 °C from 0.05% diethyl zinc, 0.8% water, and various triethyl gallium concentrations. The films are polycrystalline with crystallite sizes varying between 275 and 500 A(ring) for undoped films and between 125 and 400 A(ring) for doped films. Only those films deposited above 430 °C are highly oriented and have their c axes perpendicular to the substrate plane. The electron density, conductivity, and mobility always increase with temperature. Thicker films have higher conductivity and mobility than thinner films. The refractive index is reduced from 1.96 to 1.73 when the electron density is increased from zero to 3.7×1020 cm−3. For films deposited at 370 °C with a gallium concentration of about 2.5 at. %, the ratio of conductivity to visible absorption coefficient increases from 0.03 to 1.25 Ω−1 when the film thickness increases from 0.11 to 1.2 μm. A film deposited at 470 °C with a gallium concentration of 2.4 at. % and a thickness of 0.66 μm has a sheet resistance of 3.6 Ω/square and an average visible absorption of 6.8%. When the gallium concentration is less than 5.0 at. %, the band gap widening approximately follows the Burstein–Moss relation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351977
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  • 3
    Electronic Resource
    Electronic Resource
    The ECR ion source at the TRIUMF isotope separator TISOL : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2387-2389 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The installation at the isotope separator TISOL of a single-staged ECR (electron cyclotron resonance) ion source has been completed. The source can now routinely deliver radioactive species extracted from the production target when bombarded by 500 MeV protons. Among the radioactive species detected so far are isotopes of He, C, N, O, Ne, Cl, Ar, Kr, and Xe in single- and multiple-charge states as well as as molecular species. The yields obtained exceed in many cases those of the isotope separator ISOLDE at CERN. For stable species the source has shown high efficiencies often exceeding 10%. Details of the source construction, the isotope separator TISOL, and the variation of source parameters under operational conditions will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142936
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  • 4
    Electronic Resource
    Electronic Resource
    The UofA/TRIUMF radioactive beam ECR ion source : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 273-275 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: One of the objectives of the TISOL (Test Isotope Separator On Line) facility at TRIUMF is the production of low Z radioactive isotopes, with a special interest in those related to nuclear astrophysics. A part of experimental objectives is the installation of an electron cyclotron resonance ion source on-line to test its suitability for this use. In collaboration with TISOL, the University of Alberta has designed, built, and tested off-line a single stage ECRIS. As part of the source, testing measurements were carried out to determine the efficiency of the source; some preliminary results indicate efficiencies of 20% for Ne+ and 30% for Ar+. In general, it was attempted to test the source under as wide as possible a set of operating conditions. The final off-line testing is completed. It is hoped that the source will go on-line in the early summer of 1989.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141318
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  • 5
    Electronic Resource
    Electronic Resource
    Compensating impurities as the limiting factor in atmospheric pressure chemical vapor deposition of a-Si:H from Mg2Si generated higher silanes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4669-4676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The limiting factor for the lack of reproducibility in previous studies of atmospheric pressure chemical vapor deposition of a-Si:H from Mg2Si generated higher silanes is contamination by gas phase dopant impurities, both n and p type originating from the higher silanes production system. An n-type impurity is shown to originate from the drying column. After elimination of this impurity, the a-Si:H films produced showed evidence of p-type doping. Secondary ion mass spectroscopy analyses of the resulting films identify boron as the p-type dopant. The incorporation of boron into the films was varied by preheating the reactant gas immediately prior to deposition. The ideal preheat temperature is shown to be between 350 and 400 °C. Films deposited with a preheat of 375 °C showed no flow dependence of the hole diffusion length and the best electron transport properties. Attempts at removing the boron impurity from the gas stream were also made. A Porapak Q(large-closed-square) column installed at the end of the drying column was found to be reasonably effective. Depositions of a-Si:H were also made utilizing a commercially purified tank of Si2H6. The lack of evidence of compensating or p-type doping in this system firmly establishes the impurities as originating from the Mg2Si based silanes production system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340121
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  • 6
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of hydrogenated amorphous silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 249-256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films are made by atmospheric pressure chemical vapor deposition from polysilanes between 430 and 480 °C. The films have hole diffusion lengths up to 0.4 μm, as measured by the surface photovoltage technique. Oxygen impurities are shown to reduce the diffusion length. Stainless-steel and crystalline silicon substrates give slightly different results, implying that contamination is introduced by the substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336872
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  • 7
    Electronic Resource
    Electronic Resource
    Tests of nonlocal kinetic energy functionals (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 4446-4452 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The accuracies of various nonlocal kinetic energy functionals are evaluated by considering the kinetic energies of rare gas atoms and the kinetic energy contributions to the interaction energy (ΔEk) for pairs of rare gas atoms. The most accurate kinetic energy functionals are those that combine the density gradient factors of accurate exchange energy functionals with the Thomas–Fermi (TF) kinetic energy functional; these functionals, including a new one proposed in this paper, give total atomic kinetic energies to within 1%, as well as accurate values of ΔEk. Other gradient-corrected functionals give good results for total kinetic energies, but give poor results for ΔEk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466274
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  • 8
    Electronic Resource
    Electronic Resource
    Pulsed-laser Doppler flowmetry provides basis for deep perfusion probing (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 4242-4244 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A setup for pulsed-laser Doppler flowmetry (LDF) measurements has been built and tested. Measurements were carried out comparing continuous-wave and pulsed LDF. With pulsed LDF a higher peak power can be injected into the tissue without exceeding the safety limits. This enables a much larger spacing between the locations of illumination and detection. Thus, the penetration depth, and thus the measurement volume, can be enlarged using the pulsed-LDF method. This method will allow, e.g., monitoring of the cerebral perfusion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409566
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  • 9
    Electronic Resource
    Electronic Resource
    Gas-phase kinetics in the atmospheric pressure chemical vapor deposition of silicon from silane and disilane (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1062-1075 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A gas-phase reaction mechanism is proposed for the chemical vapor deposition (CVD) of amorphous silicon from silane or disilane at atmospheric pressure. The gas stream in the CVD reactor is populated by silanes, silylenes, and disilenes in a variety of sizes. Silylenes form by the decomposition of silanes, and they rapidly insert into other silanes to form larger silanes. Although silylenes are expected to stick to growth surfaces to which they diffuse, they are too reactive in the gas phase to deliver a large flux onto the growth surface. Larger silylenes (SiH3SiH and larger) also isomerize to form less reactive disilenes, which we propose to be principally responsible for film growth. Film profiles observed in depositions from silane and disilane are presented, and computed film profiles are compared to these observations. Deposition from silane is explained quite well by the mechanism, as are some qualitative features of deposition from disilane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345792
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  • 10
    Electronic Resource
    Electronic Resource
    Local asymptotic gradient corrections to the energy functional of an electron gas (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 881-889 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Gradient corrections to the energy functional for an electron gas are reconsidered. By interpreting these gradient corrections as terms in an asymptotic series, locally at each point in space, an asymptotic summation procedure is suggested. The new local asymptotic summation improves upon the conventional use of the gradient corrections in several respects: (1) The divergence of higher-order terms is eliminated. (2) The errors in kinetic energy calculated for atoms are reduced by a factor of 3 to 10. (3) The interaction energies of some diatomic systems are qualitatively improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448516
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