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  • American Institute of Physics (AIP)  (7)
  • Copernicus  (1)
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5335-5340 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The highly (110) textured Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 (PLZT) films have been successfully grown on SrTiO3(STO)-buffered silicon substrates. The films, deposited by pulsed laser deposition process, are assumed to form via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of phase transformation from amorphous phase to perovskite. The loss of Pb species from the films is thereby suppressed. The optimum dielectric constants obtained are around εr=490 for PLZT/STO/Si films deposited at 550 °C (1 mbar oxygen pressure, PO2) and post-annealed at 550 °C (1 atm PO2). The corresponding charge storage density is around Qc(approximately-equal-to)1.5 μC/cm2 at 50 kV/cm applied field strength. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3401-3403 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of phase-pure perovskite PLT (Pb0.95La0.05Ti0.9875O3) were deposited in situ onto Si, Pt/Ti/SiO2/Si, and SrTiO3/Si substrates by pulsed laser deposition from stoichiometric targets. No Pb loss was observed in the near-surface region. The blocking of the interdiffusion between inner Si substrate and the outer PLT films by SrTiO3 buffer layer was evidenced using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS) analyses. The formation of TiO2 second phase in PLT/Pt/Ti/SiO2/Si films was indicated by XRD and SIMS spectra to be the outward diffusion of Ti atoms from the underlying Ti layer through the Pt layer, reacting with ambient O2 at the PLT-to-Pt interface. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3531-3533 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An x-ray pole figure technique was used to study the development of magnetocrystalline texture in the sintering of Nd-Fe-B magnets. The effect of excess Nd on the texture and remanence is emphasized. It is found that a medium content of excess Nd enhances the (006) texture and remanence. However, a high content of excess Nd may deteriorate both texture and remanence, and in addition, the tilt of texture away from the prealigned direction also becomes more significant. It is believed that the floating and rotation of grains on the thick layer of liquid phase during sintering cause the deterioration.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 156-158 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of (Pb1−xLax)(Zr1−yTiy)1−x/4O3 (5/70/30) were deposited in situ onto (100) Si, Pt/Ti/SiO2/Si, and SrTiO3/Si substrates by pulsed laser deposition from stoichiometric targets and subsequent annealing. Films grown on SrTiO3/Si exhibited desired perovskite structure. On (100) Si and Pt/Ti/SiO2/Si substrates, films exhibited a perovskite-pyrochlore mixed structure. Apparent Pb deficiency at the near-surface region was observed. Films deposited at different substrates showed variations in Si content. The buffering effect of SrTiO3 was evidenced using x-ray diffraction and secondary ion mass spectrometry analyses. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1555-1557 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (∼ 3 μm/h) by a two-step process. First, the nuclei are formed under −160 V dc bias with 3 mol % CH4/H2 at 900 °C substrate temperature and then the films are grown under −100 V dc bias with around 5–6 mol % CH4/H2 at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a and b axis of [001] textured diamond films grown under large bias voltage are aligned with a and b axes of silicon, viz. (100)diamond(parallel)(100)Si and [110]diamond(parallel)[110]Si. The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non-[001] grains due to the electron emission under bias. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 554-556 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Selected area deposition of diamond films on silicon substrates was successfully achieved using the patterned Pt layer as a nucleation inhibitor in the chemical vapor deposition process. The planar diamond film array thus made possesses good electron field emission properties, that is, emission current density of (Je)Si=150 μA/cm2 (under 23.6 V/μm) and turn on field of (Eo)Si=10 V/μm. Precoating a thin Au layer (20 nm) on a Si surface further increased the emission current density to (Je)Au/Si=960 μA/cm2 (under 23.6 V/μm) with (Eo)Au/Si=10 V/μm. The effective work functions (φ) estimated by Fowler–Nordheim plots of the I–V characteristics are (φ)Si=0.059 eV and (φ)Au/Si=0.085 eV. The emission properties of both planar diamond film arrays satisfy the requirement for applying as the electron emitters in the flat panel displays. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Publikationsdatum: 2015-11-12
    Beschreibung: InSAR time series analysis is widely used for detection and monitoring of slow surface deformation. In this paper, 15 TerraSAR-X radar images acquired in stripmap mode between 2012 and 2013 are processed for land subsidence monitoring with the Small Baseline Subset (SBAS) approach in Beijing Plain in China. Mapping results produced by SBAS show that the subsidence rates in the area of Beijing Plain range from −97.5 (subsidence) and to +23.8 mm yr−1 (uplift), relative to a presumably stable benchmark. The mapping result also reveals that there are the five subsidence centers formed by surface deformation spreading north to south east of the downtown. An uneven subsidence patten was detected near the Beijing Capital International Airpor, which may be related to loading of buildings and the aircraft.
    Print ISSN: 2199-8981
    Digitale ISSN: 2199-899X
    Thema: Architektur, Bauingenieurwesen, Vermessung , Geographie
    Standort Signatur Erwartet Verfügbarkeit
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