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  • 1
    Electronic Resource
    Electronic Resource
    Introduction of extrinsic defects into mercuric iodide during processing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4591-4594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature (4.2 K) photoluminescence spectroscopy (PL) measurements were performed on mercuric iodide (HgI2) crystals which were intentionally doped with copper or silver during KI etching. PL spectra obtained after these doping experiments show specific Cu and Ag features similar to those previously observed after deposition of Cu or Ag contacts on mercuric iodide crystals. The in-diffusion of Cu or Ag into bulk HgI2 has also been confirmed a few days after doping. This diffusion introduces new recombination centers in the material. This work suggests that the processing steps used to fabricate mercuric iodide nuclear detectors can lead to the introduction of new defects which are detrimental to detector performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352749
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  • 2
    Electronic Resource
    Electronic Resource
    High resolution 4.2 K near band-gap photoluminescence spectrum of mercuric iodide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2951-2954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated in detail (resolution up to 0.35 A(ring)) the near-band-gap 4.2 K photoluminescence spectrum of undoped Hgl2 in its red tetragonal form. At least 26 emission lines are resolved in the wavelength region between 5290 and 5400 A(ring). Many of these are reported for the first time. We have also tabulated the steplike emission lines between 5220 and 5290 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346429
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  • 3
    Electronic Resource
    Electronic Resource
    Study of semitransparent palladium contacts on mercuric iodide by photoluminescence spectroscopy and thermally stimulated current measurements (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4247-4252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semitransparent palladium contacts on mercuric iodide were studied by low temperature photoluminescence spectroscopy and thermally stimulated conductivity. These contacts were deposited either by thermal evaporation or by plasma sputtering. Changes due to palladium deposition were found in the photoluminescence spectra and were attributed to modifications in the stoichiometry within the palladium/mercuric iodide interfacial region. Thermally stimulated conductivity measurements revealed two dominant traps with activation energies of 0.010 and 0.54 eV. The importance of these traps in the application of nuclear detection is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348396
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  • 4
    Electronic Resource
    Electronic Resource
    Incorporation of defects during processing of mercuric iodide detectors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 86-92 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of chemical etching in KI solution, heating, and vacuum exposures of HgI2 were individually studied by low-temperature photoluminescence (PL) spectroscopy. Each of these processing steps is important in the manufacturing of mercuric iodide detectors and may be responsible for the incorporation of carrier traps both in the near-surface region and in the bulk. The results of etching experiments showed that the near-surface region has a different defect structure than the bulk, which appears to result from iodine deficiency. Bulk heating at 100 °C also modifies the defect structure of the crystal. Vacuum exposure has an effect similar to chemical etching, but it does not cause significant degradation of the stoichiometry for recently KI-etched specimens. These studies suggest that some features in the PL spectra of HgI2 are associated with stoichiometry of the specimens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347074
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray diffraction study of alternating nanocrystalline silicon/amorphous silicon multilayers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 838-840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of alternating nanocrystalline silicon/amorphous silicon multilayers with visible light emission at room temperature were examined by means of x-ray diffraction. According to the linewidths and intensities of the diffraction peaks in the low- and high-angle ranges, we have determined the effective interface thickness, the mean crystallite sizes, and the internal strains, which are closely related to the photoluminescence in this material. In addition, the existence of the voids or holes was also observed, indicating that the improved electrical properties of this kind of hydrogenated nanocrystalline materials are due to the inhomogeneous structure of the material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118219
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  • 6
    Electronic Resource
    Electronic Resource
    Phonon properties and microstructure of annealed LiTaO3:Nd (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2401-2403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phonon properties and microstructure of annealed Nd-doped LiTaO3 (LT:Nd) were examined by means of Raman scattering and infrared spectra. Raman spectra show the splitting of A1(TO) mode at 204 cm−1 and the appearance of an additional shoulder peak at ∼208 cm−1, indicating that the homogeneous distribution of Nd ions leads to the structural recovery of partial oxygen octahedra centered with Li and Ta ions, but the microstructural deviation from original LT trigonal system still exists. The enhancement of E(TO) mode intensities and the reduction of A1(TO) mode intensities in the A1+E symmetry spectrum are mainly attributed to the microstructural deviation of LT:Nd and the changed photorefractive effect due to annealing. Infrared spectra in the OH stretching region suggest that the changed photorefractive effect arises from the displacements of positive ions along the optical z axis. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118884
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  • 7
    Electronic Resource
    Electronic Resource
    Annealing temperature dependence of Raman scattering in Ge+-implanted SiO2 films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2704-2706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the Raman spectra of violet and infrared emitting Ge+-implanted SiO2 films with special emphasis upon annealing temperature (AT) dependence of Raman scattering. We found that the complete spectrum mainly consists of three bands at 220–280, 300, and 430 cm−1, corresponding to scattering of Ge-related components, Ge nanocrystallites, and localized Si–Si optical phonons in the Ge neighborhoods, respectively. The Ge crystalline band shows an obvious AT dependence. The theoretical result from the phonon confinement model can predict its linewidth change with AT, but cannot explain its constant peak frequency. Based on the experimental result from x-ray diffraction, we attributed the discrepancy mainly to the compressive stress exerted on Ge nanocrystallites, which leads to the upshift of Ge crystallite peak thereby basically compensating the downshift caused by the confinement on phonon frequency. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366089
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence variations associated with the deposition of palladium electrical contacts on detector-grade mercuric iodide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1536-1538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specimens of mercuric iodide with evaporated semitransparent palladium contacts have been studied using low-temperature photoluminescence spectroscopy. Distinct differences were found between spectra taken from beneath the Pd contacts and those taken from regions on the HgI2 sample that were masked during the Pd deposition, indicating that contact fabrication can change the defect structure near the contact/substrate interface. Comparison of the spectra from spots beneath the contacts with spectra from bulk material specimens and HgI2 detectors graded in terms of their nuclear detection performance suggests that the processing steps used to deposit electrical contacts and the choice of contact material may have a significant influence on detector performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100433
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen treatment effect on shallow and deep centers in GaSb (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1318-1320 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown by spreading resistance and capacitance–voltage measurements that atomic hydrogen passivates shallow acceptors and donors in GaSb. Deep level passivation by hydrogen also occurs, as revealed by deep level transient spectroscopy measurements on Schottky diode structures. Effective diffusion coefficients for hydrogen were determined for both n+ and p+ GaSb; in the former case the diffusion is thermally activated with the relationship DH=3.4×10−5e−0.55 eV/kT, whereas in p+ material DH=1.5×10−6e−0.45 eV/kT over the temperature range 100–250 °C. Reactivation of passivated shallow and deep levels occurs for temperatures of 250–300 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107329
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  • 10
    Electronic Resource
    Electronic Resource
    Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 °C in N2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120735
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