Electronic Resource
Polyakov, A. Y.
;
Pearton, S. J.
;
Wilson, R. G.
;
[et al.]
Rai-Choudhury, P.
;
Hillard, R. J.
;
Bao, X. J.
;
Stam, M.
;
Milnes, A. G.
;
Schlesinger, T. E.
;
Lopata, J.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1318-1320
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It is shown by spreading resistance and capacitance–voltage measurements that atomic hydrogen passivates shallow acceptors and donors in GaSb. Deep level passivation by hydrogen also occurs, as revealed by deep level transient spectroscopy measurements on Schottky diode structures. Effective diffusion coefficients for hydrogen were determined for both n+ and p+ GaSb; in the former case the diffusion is thermally activated with the relationship DH=3.4×10−5e−0.55 eV/kT, whereas in p+ material DH=1.5×10−6e−0.45 eV/kT over the temperature range 100–250 °C. Reactivation of passivated shallow and deep levels occurs for temperatures of 250–300 °C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107329
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