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  • American Institute of Physics (AIP)  (13)
  • EDP Sciences  (8)
  • Blackwell Publishing Ltd  (4)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3082-3086 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of the signal reflections originating at the garnet film ends and of the triple transit between the microstrip transducers in magnetostatic volume wave delay lines has been performed. The influence of those effects on the band shape and on the insertion loss of magnetostatic wave devices has been inferred and compared with experimental results. In this framework, the possible utilization of the reflections for filterbank applications is also proposed.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5888-5891 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The successful indiffusion of Ti into single-crystalline LiNbO3 substrates is reported as a result of high-intensity ruby laser irradiation of LiNbO3 samples coated with films of Ti of 400 A(ring) thickness. The experimental data are compared to the results of cw CO2 or Ar ion laser irradiations. We conclude that the Ti indiffusion process starts with the oxidation of Ti and continues in a liquid phase.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3882-3885 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-power annealing by a pulsed laser is used to recover the structure of low-dose implanted (100) GaAs crystals. Reflection high-energy electron diffraction with variable glancing incidence is employed to detect the structural changes at different depths in the specimens. The depth dependence of the damage is studied in more detail by Rutherford backscattering analysis. The annealing results depend on the irradiation conditions. A laser energy window below the melting threshold is found within which the structure can be restored to about as high degree of crystallinity as the virgin one, without any visible surface damage. A simple theoretical estimate shows that the temperature rise of the material is far below the melting threshold. This rise is too short in time to cause substantial dopant diffusion; however, it can enhance well the point-defect mobility.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3552-3560 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction (RHEED) technique, with the possibility to shift, rotate, and tilt the sample with respect to the electron beam, has been used to investigate the structure of the transition layers formed at the interface between titanium substrate and diamond films. The diamond films were deposited on partially masked titanium sheets by means of the chemical vapor deposition technique, using CH4/H2 mixtures activated by hot filament. Deposition experiments have been performed at 650 and 730 °C. The RHEED analysis has been carried out in selected area conditions on the boundary between coated and uncoated regions; it enabled us to detect and characterise the inhomogeneous and complex structural configuration of the diamond/titanium interface. For the samples deposited at 650 °C we identified, starting from the titanium surface: a mixed phase constituted by titanium hydride and carbide precipitates, graphitic clusters embedded into a titanium hydride/carbide phase, TiC layers, and finally diamond films. At 730 °C both growth location and formation sequence of the various structures were found to be similar to those detected at 650 °C, resulting, however, in the complete absence of the Ti hydride phase. A first indication about the time scale of the process has been determined from structural investigations of deposits grown by runs lasting from 3 up to 20 min. A schematic model is presented which describes the growth sequence of the various species inside the intermediate reaction layers. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4307-4311 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural modifications induced by pulsed laser irradiations in the surface layers of glassy carbon have been monitored by reflection high energy electron diffraction, Raman spectroscopy, and electron energy loss spectroscopy. The glassy carbon samples were irradiated by 30 superimposed laser pulses (λ´=6.943 nm). The energy density (100–500 mJ/cm2 per pulse) delivered to the material and the repetition rate of the laser (0.05 Hz) have been chosen so that the temperature increase of the irradiated surface layers was below the melting point of the glassy carbon. The combined use of the analysis techniques indicated that the beginning of the solid state processes, leading to microstructural modifications of the surface layers, occurs at energy density of 300 mJ/cm2. An increase of the average crystalline size of graphitic clusters occurs upon radiation performed at fluences of 300 and 400 mJ/cm2, whereas at higher energy density the material undergoes complete amorphization. The analysis of chemical state and microstructure of the irradiated samples clearly demonstrates that graphitization or, conversely amorphization of glassy carbon surface layers can be achieved by a proper choice of the laser irradiation conditions. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2860-2862 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate single-mode laser emission at 490 nm from a stable cavity based on a methyl-substituted poly-(para-phenylene)-type ladder polymer. The laser emission is characterized by a well-defined excitation fluence threshold, a high directionality, and a drastic spectral narrowing. The laser generates picosecond pulses of excellent amplitude stability. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4072-4074 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution transmission electron microscopy has been used to investigate the lattice damage distribution in Zn+ implanted and implanted plus low-power pulsed-laser annealed (LPPLA) GaAs. The damage distribution of implanted samples has been examined in detail showing the presence of a continuous amorphous layer under the surface and stacking fault tetrahedra nuclei at the inner a–c interface. A solid phase epitaxial regrowth of ion implanted GaAs has been induced by LPPLA technique. In the annealed samples, the crystalline recovering is characterized by a low density of residual extended defects lying in the fully recrystallized amorphous layer. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2765-2767 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films have been obtained on Ta polycrystalline substrates from mixtures of methane and hydrogen by the hot-filament chemical vapor deposition technique. The structural characteristics of the polycrystalline deposits have been investigated by reflection high energy electron diffraction (RHEED), while the surface morphologies have been observed by scanning electron microscopy or carbon replica transmission electron microscopy. For one of the films, the formation of thermal spikes during the deposition process yielded a structure giving a RHEED pattern with d spacings and intensities not corresponding to the already identified carbon and diamond phases. On the base of the RHEED pattern the observed phase has been identified as a face-centered-cubic lattice, belonging to the space group F4¯3m and ascribed to a so-called X-diamond polytype.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1709-1711 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast light-induced degradation of amorphous silicon p-i-n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long-term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4082-4084 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-mode tunable laser emission is obtained from a stable cavity based on a prototype compound of a class of functionalized electroluminescent oligothiophenes. Laser emission is demonstrated in the red spectral region with a tunability wavelength range of 30 nm, centered at 607 nm. The laser exhibits a well-defined pump threshold and good emission characteristics. The results suggest the use of the family of functionalized oligothiophenes as optical amplifiers covering the whole visible spectral region. © 2001 American Institute of Physics.
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