Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 5708-5709
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth rate of GaP and AlGaP epitaxial layers was efficiently enhanced by N2-laser irradiation at low substrate temperatures in chemical beam epitaxy. The photo-enhancement efficiency, defined as the ratio of the number of deposited Ga atoms to the number of irradiating photons per unit area per unit time, is estimated to be 7×10−4. The decomposition of triethylaluminum was also enhanced by the irradiation, but less efficiently.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350195
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