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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics of barium titanate films prepared by laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354744
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  • 2
    Electronic Resource
    Electronic Resource
    High quality ZnO thin films grown by plasma enhanced chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 501-505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnO thin films have been grown on a Si(100) substrate by plasma enhanced chemical vapor deposition using a zinc organic source [Zn(C2H5)2] and carbon dioxide (CO2) gas mixtures at the low temperature of 180 °C. The dependence of ZnO thin film quality on the gas flow rate ratio of Zn(C2H5)2 to CO2 (GFRRZC) is studied by using x-ray diffraction (XRD), optical absorption (OA) spectra, and cathodoluminescence (CL) spectra. High quality ZnO thin films with a c-axis-oriented wurtzite structure are obtained when the GFRRZC is 0.33. XRD shows that the full width at half maximum of (0002) ZnO located at 34.42° is about 0.2°. At room temperature, a pronounced free exciton absorption peak around 365 nm is clearly observed. Also, a strong free exciton emission without deep level defect emission is observed around 385 nm, and its temperature dependence is studied from the photoluminescence spectra. These observations indicate the formation of a high quality ZnO film. Additionally, nitridation of the Si surface caused by releasing NH3 plasma into the deposition chamber is an effective way to improve film quality. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415545
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperatures" [J. Appl. Phys. 85, 1911 (1999)] (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2367-2367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371059
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of Pt-Si interface by spectroscopic ellipsometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7423-7427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357968
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  • 5
    Electronic Resource
    Electronic Resource
    Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4796-4798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359762
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6724-6726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measurements of internal photoemission and photovoltage within the temperature range of 7–300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359089
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  • 7
    Electronic Resource
    Electronic Resource
    Oxide-nitride storage dielectrics on smooth and rough polycrystalline silicon layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 345-347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that for the same capacitance value, 9.5-nm-thick oxide-nitride storage dielectrics deposited on rough polycrystalline silicon exhibit a lower leakage current and a higher lifetime than 5.9 nm layers on smooth polycrystalline silicon. Leakage current reduction of more than two orders of magnitude and a lifetime increase of more than three orders of magnitude are reported. These improvements are explained by the nitride bulk-limited type of conduction. Our data show that textured storage capacitors have all the properties required for efficient fabrication of 64 megabit dynamic random access memories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105591
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperatures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1911-1915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin SiO2 films were grown by Si surface irradiation with an O2+Ar electron cyclotron resonance (ECR) microwave plasma at low temperatures. These films without hydrogen and silicon deposition were easily grown in a few minutes at low temperatures and at relatively low working pressures (1.0–3.9×10−1 Pa). The promoting growth process of an ultrathin oxidized layer (1–9 nm) was analyzed by in situ Fourier transform infrared reflective absorption spectroscopy. By using the sputter erosion technique, the dependence of x-ray photoelectron spectroscopy on the depth profiling of the films was obtained. The compositional deviations of the films from the stoichiometric SiO2 were also discussed in the interface region of Si/SiO2. This study indicated that an O2 ECR microwave plasma was efficient to form controlled ultrathin SiO2 dielectric films. The dependence of the film quality on the working pressure and gas flow rate ratios of the O2 to Ar was discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369183
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  • 9
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    Dynamics of cathode spots in low-pressure arc plasma removing oxide layer on steel surfaces (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-03-02
    Description: The dynamics of cathode spots has been investigated in low-pressure arc plasma for removing oxide layer on low carbon steel surfaces. The motion of cathode spots was observed with a high speed camera, and the arc voltage was analyzed by fast Fourier transform. The spots move on clean steel surface as a random walk, and the low-frequency components dominated the voltage waveform. However, the spots on steel surfaces with oxide layer tend to burn on the rim of the eroded area formed in the previous arcing, and the low-frequency components decrease correspondingly. The “color” of the colored random noise for arc voltage varies from the approximate brown noise for clean steel surface to pink noise for thick oxide layer, where the edge effect of boundary is considered to play a significant role.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Interplay between interband coupling and ferromagnetism in iron pnictide superconductor/ferromagnet/iron pnictide superconductor junctions (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-28
    Description: An extended eight-component Bogoliubov-de Gennes equation is applied to study the Josephson effect between iron-based superconductors (SCs) with s ± -wave pairing symmetry, separated by an ferromagnet (FM). The feature of damped oscillations of critical Josephson current as a function of FM thickness, the split of the peaks induced by the interband coupling is much different from that for the junction with the s ± -wave SCs replaced by s + + -wave ones. In particular, a 0 − π transition as a function of interband coupling strength α is found to always exhibit with the corresponding dip shifting toward the larger α due to enhancing the spin polarization in the FM, while there exits no 0 − π transition for the SC with s + + -wave pairing symmetry. The two features can be used to identify the pairing symmetry in the iron pnictide SC different from the s + + -wave one in MgB 2 . Experimentally, by adjusting the doping level in the s ± -wave SCs, one can vary α .
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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