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  • American Physical Society  (126)
  • American Institute of Physics (AIP)  (31)
  • 1
    Electronic Resource
    Electronic Resource
    Phase matching for second harmonic generation in KNbO3:Ta crystals with Nd:YAG- and GaAs-laser wavelengths (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3426-3428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noncritical phase-matched second harmonic generation was measured in optically biaxial KNb1−xTaxO3 mixed crystals in the orthorhombic phase. For Nd:YAG-(1064 nm) the coefficient d31 of the tensor of the nonlinear susceptibility was applied, while for the GaAs-laser (905 nm) the coefficient d32 was used. For both laser wavelengths the phase-matching temperature decreases with increasing Ta-concentration. Noncritical phase-matching at room temperature can be reached with the GaAs-laser for a Ta concentration of ≈9%. The corresponding value for the Nd:YAG laser is ≈14%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348525
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Ion-channeling analysis of boron clusters in silicon" [J. Appl. Phys. 90, 4741 (2001)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5507-5507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1463446
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  • 3
    Electronic Resource
    Electronic Resource
    On boson condensation considering a generalized Casimir example (1990)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 31 (1990), S. 2996-3002 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: From the concept of generalized condensation [M. Van den Berg, J. T. Lewis, and J. V. Pulè, Helv. Phys. Acta 59, 1271 (1986)] it is known that two critical densities ρc and ρm exist for a free boson gas. Density ρc is the classical one and ρm is the critical density below which there can be no macroscopic occupation of ground state. A free boson gas is studied in a weak external potential which behaves asymptotically like ||x1||α1+||x2||α2+⋅⋅⋅ +||xd||αd near the origin. It is shown that there are only two possibilities to get ρc〈ρm〈∞, namely, α1=α2=∞ and d≥3 (this corresponds to Dirichlet boundary conditions), and α1=2 and d≥2 (i.e., a harmonic oscillator).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528953
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of a partially oxidized calcium cathode on the performance of polymeric light emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1376-1382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the influence of the presence of oxygen during the deposition of the calcium cathode on the structure and on the performance of polymeric light emitting diodes (pLEDs). The oxygen background pressure during deposition of the calcium cathode of polymeric LEDs was varied. Subsequently, the oxygen depth distribution was measured and correlated with the performance of the pLEDs. The devices have been fabricated in a recently built ultraclean setup. The polymer layers of the pLEDs have been spincoated in a dry nitrogen atmosphere and transported directly into an ultrahigh vacuum chamber where the metal electrodes have been deposited by evaporation. We used indium–tin–oxide as anode, OC1C10 PPV as electroluminescent polymer, calcium as cathode, and aluminum as protecting layer. We achieved reproducibility of about 15% in current and brightness for devices fabricated in an oxygen atmosphere of (very-much-less-than)10−9 mbar. For further investigations the calcium deposition was carried out in an oxygen atmosphere from 10−8 to 10−5 mbar. We determined the amount of oxygen in the different layers of the current–voltage-light characterized pLEDs with elastic recoil detection analysis and correlated it with the characteristics of the devices. The external efficiency of the pLEDs decreases continuously with increasing oxygen pressure, the current shows a pronounced minimum. The brightness mostly decreases with increasing oxygen with an indication of a slight minimum. PLEDs with completely oxidized calcium are not operational. The first contact of the pLEDs with the dry glove box environment leads to an immediate reduction of current and brightness which is caused by the cooling of the devices by several degrees. Determining reproducible characteristics of pLEDs in the vacuum requires the measurement of their temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383577
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  • 5
    Electronic Resource
    Electronic Resource
    Channeling on boron clusters in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5032-5037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion implantation at high doses of boron (〉1015 cm−2) in Si is necessary for the fabrication of ultrashallow junctions but can result in the undesirable presence of boron clusters. Values for the dimensions of the lattice distortions in the implanted Si are obtained by comparing the enhanced dechanneling and the direct scattering peak in the region with clusters in a channeled Rutherford backscattering spectrometry spectrum to those from Monte Carlo calculations on a curved crystal structure. Values of about 0.17 and 65 nm are found for the maximum deformation and the length of the distortions in the crystal, respectively, which implies that the lattice distortions extend significantly outside the layer in which the B clusters are supposed to be present. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406968
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal wave imaging of electrically heated microstructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2013-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoreflectance technique is applied for imaging electric current distributions and thermal transfer in a temperature reference resistor heated by an alternating current. High-frequency scans (30 kHz) allow imaging of the current density distribution in conducting strips of the resistor while scans of amplitude and phase of the surface temperature variation at lower frequencies reveal plane, cylindrical, and spherical thermal waves. We investigate wave dimensionality as a function of heating geometry and thermal length, and present a simple method allowing a quantitative thermal analysis by exploiting the phase profile of cylindrical thermal waves. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363094
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanisms behind green photoluminescence in ZnO phosphor powders (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7983-7990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green emission intensity is strongly influenced by free-carrier depletion at the particle surface, particularly for small particles and/or low doping. Our data suggest that the singly ionized oxygen vacancy is responsible for the green emission in ZnO; this emission results from the recombination of a photogenerated hole with the singly ionized charge state of this defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362349
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of B-site cation stoichiometry on electrical fatigue of RuO2//Pb(ZrxTi1−x)O3//RuO2 capacitors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1013-1016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There have been numerous reports that Pb(ZrxTi1−x)O3 (PZT) thin-film capacitors with RuO2 electrodes and compositions near the morphotropic phase boundary exhibit minimal decrease in switched polarization with electric-field cycling. We show that the fatigue performance of RuO2//PZT//RuO2 capacitors strongly depends on PZT film composition. Specifically, we demonstrate that the rate of polarization fatigue increases with increasing Ti content for PZT thin films of tetragonal crystal symmetry deposited on RuO2 electrodes. As the Ti content of the PZT films increased, the film gain morphology changed from columnar to granular and the volume percent of a fluorite-type second phase decreased. These microstructural trends and the possibility that the electrode material acts as a sink for oxygen vacancies are discussed to explain the fatigue dependence on B-site cation ratio for PZT films with RuO2 electrodes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360888
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  • 9
    Electronic Resource
    Electronic Resource
    Interface compound formation and dependence on In-layer thickness in Ni/In thin-film systems (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2904-2906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion and interface compound formation has been observed at the system Ni/In by using thin-film couples as well as thin In films on low index Ni single-crystal substrates. The method applied was the perturbed γγ-angular correlation technique, which is very sensitive to local structures and their changes around probe atoms. The successive occurrence of different Ni/In compounds could be observed on isochronal annealing above 230 K. A correlation between the appearance of compounds and In film thickness has been found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104717
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  • 10
    Electronic Resource
    Electronic Resource
    Measuring local thermal conductivity in polycrystalline diamond with a high resolution photothermal microscope (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2966-2972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photothermal microscope that provides micrometer lateral and submicrometer depth resolution was designed. Thermal conductivity measurements with modulation frequencies up to 12 MHz on single grains in polycrystalline diamond demonstrate its lateral resolution power even for a highly conducting material. Measured conductivities strongly depend on the averaged volume and values up to 2200 W/mK are found in the high frequency limit where the properties inside a grain are sampled. The capability of the instrument to measure thermal parameters on thin films is demonstrated for gold films evaporated on quartz with a thickness ranging from 20 to 1500 nm. Measurements reveal a strong thickness dependence for both thin film conductivity and the contact resistance between film and substrate. Thermal conductivity decreases monotonically from 230 to 30 W/mK whereas the contact resistance rises from 2×10−7 to 8×10−6 m2K/W with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364329
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