Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 4621-4625
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Current-voltage, capacitance-voltage, and photoresponse measurements have been reexamined on the polar Ga-(111)A and P-(∼(111)) B surfaces of n-GaP for reactive (Al) and nonreactive (Ag) metals. Using a chemical etching/in vacuo desorption cleaning sequence, nearly oxide-free A and B faces could be obtained. For diodes formed on such surfaces, the intrinsic, face-dependent variation in A and B Schottky barrier heights was less than 30 meV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336231
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