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  • American Institute of Physics  (87)
  • EDP Sciences  (67)
  • American Institute of Physics (AIP)  (16)
  • 1
    Electronic Resource
    Electronic Resource
    CdS/CdSe intrinsic Stark superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 907-915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer superlattices of wurtzite CdS/CdSe have been grown on (111)A GaAs substrates by metalorganic chemical vapor deposition and their optical properties studied by photoluminescence spectroscopy. It is shown that the superlattice layers contain giant strain-induced piezoelectric fields exceeding 2×108 V m−1. These fields are similar to those reported for (111) orientated III–V superlattices, but an order of magnitude greater. The recombination energies from a series of samples provide evidence for a type II conduction band offset of 0.23±0.10 eV (the electron wells being in the CdS), with the band structure heavily modified by the internal electric fields. In addition, the photoluminescence peak emission energy shows a strong dependence on the excitation power. This is interpreted as further evidence for the effect of internal fields. We conclude that this system shows new effects not previously observed in II–VI compound superlattices. The large band-gap tunability and the space-charge effects offer possibilities for all-optical switching devices in the 700–1300-nm region of the spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351312
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  • 2
    Electronic Resource
    Electronic Resource
    Potential fluctuations in metal–oxide–semiconductor field-effect transistors generated by random impurities in the depletion layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4326-4334 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnitude and length scale of potential fluctuations in the channel of metal–oxide–semiconductor field-effect transistors due to the random positions of ionized impurities in the depletion layer. These fluctuations effect the threshold voltage of deep submicron devices, impede their integration, and reduce yield and reliability. Our simple, analytic results complement numerical, atomistic simulations. The calculations are based on a model introduced by Brews to study fluctuations due to charges in the oxide. We find a typical standard deviation of 70 mV in the potential below threshold, where the channel is empty, falling to 40 mV above threshold due to screening by carriers in the channel. These figures can be reduced by a lightly doped epitaxial layer of a few nm thickness. The correlation function decays exponentially in an empty channel with a length scale of 9 nm, which screening by carriers reduces to about 5 nm. These calculations of the random potential provide a guide to fluctuations of the threshold voltage between devices because the length of the critical region in a well-scaled transistor near threshold is comparable to the correlation length of the fluctuations. The results agree reasonably well with atomistic simulations but detailed comparison is difficult because half of the total standard deviation comes from impurities within 1 nm of the silicon–oxide interface, which is a single layer of the grid used in the simulations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450031
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  • 3
    Electronic Resource
    Electronic Resource
    The case against intermediate statistics (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 1117-1121 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown that intermediate statistics do not correspond to any physical process. The stationary probability distributions of intermediate statistics are not compatible with any mechanism which allows a variation between Fermi–Dirac and Bose–Einstein statistics. The binomial and negative binomial distributions, characterizing Fermi–Dirac and Bose–Einstein statistics, respectively, transform into the Poisson distribution, descriptive of classical statistics, as the number of energy cells increases without limit. These distributions are shown to be the laws of error leading to the average value as the most probable value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528330
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  • 4
    Electronic Resource
    Electronic Resource
    Stimulated radiation from spatiotemporally gyrating relativistic electron beams (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 4291-4302 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stability analysis is made of an electron beam, propagating along and gyrating about a uniform magnetic field, for the case of a spatiotemporal equilibrium distribution in the phase angle of the transverse electron momentum component. The axial momentum component and the magnitude of the transverse momentum component are assumed to have definite values in the equilibrium distribution. The analysis is carried out by applying Lorentz transformations to previous results for nongyrotropic equilibrium distributions. The dispersion matrix, its eigenmodes (which relate field amplitudes), and the dispersion relation are obtained. Numerical results show that varying the spatiotemporal properties of a nongyrotropic equilibrium distribution has only a small effect on maximum growth rates of radiation, but has a strong effect on the frequencies and wavenumbers at which instability occurs. A novel mechanism is found by which electrons emit stimulated radiation at frequencies that, in principle, can be greater than the usual Doppler-shifted electron cyclotron frequency by orders of magnitude. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308080
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  • 5
    Electronic Resource
    Electronic Resource
    Stability properties of coherently gyrating relativistic electron beams (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 3416-3439 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation is made of the effects of nongyrotropic equilibrium distributions in the phase angle of p⊥ on the stability properties of a relativistic electron beam propagating along and gyrating about an applied uniform magnetic field. Perturbations are assumed to vary spatially only in the direction of the applied magnetic field, so that generated electromagnetic and longitudinal electric fields propagate parallel to the applied field. The two equilibrium distributions considered are the time-dependent distribution f0(p⊥,pz,ξ) with ξ=φ−Ωct/γ and the axial-dependent distribution f0(p⊥,pz,ζ) with ζ=φ−mΩcz/pz. A Vlasov-Maxwell analysis leads to integral equations relating the field Fourier components. These equations reduce to algebraic equations when no spread in γ is present in the time-dependent equilibrium distribution and when no spread in pz is present in the axial-dependent distribution. Numerical computations for these special cases show that a rich variety of stability properties are obtained by changing the distributions in ξ and ζ. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873056
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  • 6
    Electronic Resource
    Electronic Resource
    Forward elastic recoil measurements using heavy ions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4524-4532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of the elastic recoil detection technique utilizing heavy ions for the analysis of semiconductor samples is demonstrated. With this technique the depth profiles of the primary constituents as well as profiles of all impurities can be measured in one spectrum. Depending on the target material, a depth resolution down to 20 nm can be achieved. All elements except hydrogen can be detected with almost the same sensitivity, namely ∼1×1015 at/cm2 with 136 MeV I in a 30° recoil geometry. For hydrogen, the sensitivity is about four times better.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357284
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  • 7
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial growth of amorphized InP (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 487-489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxial growth of amorphized InP has been investigated at temperatures of 145–335 °C. The epitaxial recrystallization kinetics have been determined for both thermal and ion beam annealing using ion channeling and time-resolved reflectivity measurements and post-anneal, residual disorder has been characterized with transmission electron microscopy. The twin density and size distribution were significantly smaller for ion beam annealed samples, thus clearly demonstrating that ion beam annealing effectively suppresses the onset of highly defective (twinned) regrowth characteristic of thermal annealing. The substantially better crystalline quality of ion beam annealed samples contrasts with observations in GaAs where only a slight difference in post-anneal disorder was apparent for the two annealing regimes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104616
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  • 8
    Electronic Resource
    Electronic Resource
    Structural and optical properties of GaAlInAs lattice matched to InP grown by low-pressure metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 276-278 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time, the metalorganic vapor phase epitaxy (MOVPE) growth of the quaternary alloy GaxAlyIn1−x−yAs, lattice matched to InP. Single epitaxial layers were prepared showing specular morphologies and lattice matching within Δa/a=10−3. Epilayers showed a high degree of crystallinity with routine x-ray linewidths of 20–40 seconds of arc. The lowest linewidth achieved was 22 seconds of arc. Room temperature and 4 K photoluminescence (PL) studies demonstrated very narrow excitonic transitions with ΔE at 4 K down to 5.4 meV. Band-gap energies, obtained from the absorption edge and PL peak energies, plotted against Al composition showed that the alloy was best described by a straight line relationship between the ternary end points, Ga0.47In0.53As and Al0.48In0.52As with no bowing observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100593
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  • 9
    Electronic Resource
    Electronic Resource
    Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wells (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 493-495 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of electric field induced exciton energy shifts and photoluminescence quenching in GaInAs/InP multiple quantum wells. We have measured both the photocurrent and photoluminescence spectra from 100 A(ring) wells contained with p+- and n+-InP layers in a conventional p-i-n structure; reverse bias voltages of up to 12 V were applied. The exciton peaks in the photocurrent spectrum are seen to broaden and shift to lower energy; the photoluminescence peak, which is due to n=1 excitonic and free-carrier recombination, also shifts to lower energy and is completely quenched at high voltages. These results are similar to those reported previously for GaAs quantum wells and ascribed to the quantum-confined Stark effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98377
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  • 10
    Electronic Resource
    Electronic Resource
    Planar channeling in GaAs/InxGa1−xAs/GaAs strained-layer structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1510-1515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar {110} channeling measurements with 1–2-MeV He+ ions have been used to investigate strained-layer structures of (100) GaAs/InxGa1−xAs/GaAs with x=0.07–0.17. Beam-steering effects in the surface GaAs layer are observed to have a major influence on {110} planar angular scans carried out in the InxGa1−xAs layers resulting generally in a double or more complex-shaped angular dip. A simple computer simulation has been developed which determines the main features of the experimental angular scan data. Comparison of simulation and experimental data allows a reasonable determination of the kink angle θK between the {110} planes for the surface GaAs and underlying strained layer. Only in limiting cases is it possible to unequivocally determine θK from the experimental data alone. They are as follows: (i) when θK=0; (ii) θK〉2ψ pc (ψ pc is the critical angle for {110} planar channeling); and (iii) when the thickness t of the top layer is thin (t(very-much-less-than)2d/ψ pc, where d is the {110} interplanar spacing).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342966
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