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  • Public Library of Science  (26)
  • American Institute of Physics (AIP)  (8)
  • American Geophysical Union  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4521-4527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zirconia films of varying thickness (ranging from 20–55 Å) have been grown by the method of UV ozone oxidation at room temperature. The electrical properties of these films have been studied in detail by capacitance–voltage (C–V) and I–V measurements. Capacitors were subjected to various anneals in differing ambient to study their effects on C–V hysteresis, dispersion and charge trapping. It was found that annealing in nitrogen followed by forming gas resulted in C–V curves with negligible hysteresis. The effects of different underlayers on the electrical properties of zirconia films have also been studied and are briefly discussed. It was found that zirconia films grown on UV-ozone grown SiO2 had lower hysteresis and lower interface trap density compared to zirconia films grown on chemical oxide. The effect of oxidation time and oxygen pressure have been investigated; in particular, detailed electrical studies have been performed on partially oxidized zirconia. Defective oxides are shown to have significant frequency dispersion in both the accumulation and depletion regions of the C–V curves along with very high loss tangent factor compared to stoichiometric oxides. A physical mechanism based on Maxwell–Wagner interfacial polarization is presented here for a model system of ZrO2–Zr to explain the experimental data qualitatively. Finally, we have attempted to correlate the C–V hysteresis to the presence of traps in the zirconia film using temperature-dependent current–voltage measurements. The leakage current was found to be nearly independent of temperature at low voltages, suggesting a tunneling mechanism, while at higher voltages the data can be modeled using the Poole–Frenkel conduction mechanism. It is suggested that C–V hysteresis in zirconia films possibly arises from electrical traps in the film and can be identified by modeling their I–V characteristics. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459103
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  • 2
    Electronic Resource
    Electronic Resource
    Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTiO3 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6203-6208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric reliability for polycrystalline and multilayered BaTiO3 thin films has been evaluated using time-zero and time-dependent dielectric breakdown techniques. The histogram of dielectric breakdown for multilayered BaTiO3 thin films showed a typical Weibull distribution in contrast to a random distribution when compared with polycrystalline BaTiO3 thin films. The measurement resulted in that the 400 nm-thick multilayered BaTiO3 thin film sustained about 105 hour-long operation at 1 MV/cm, showing superior properties when compared with polycrystalline. The smaller leakage current level was obtained for a multilayered BaTiO3 film having a relatively thick underlayer of polycrystalline BaTiO3 film. The value of the breakdown field was smaller at the thicker multilayered BaTiO3 while the distribution of the breakdown widened for thicker film. Analysis of the roughness for the films confirmed that the field breakdown mechanism (e.g., lowering and spreading) is related to the surface roughness of the topmost layer which varies with the thickness of underlying polycrystalline BaTiO3. The reduced leakage current at the thick multilayered BaTiO3 was due to the presence of a wide transition layer between polycrystalline and amorphous BaTiO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366505
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  • 3
    Electronic Resource
    Electronic Resource
    The influence of surfactant on the bubble motion in Hele–Shaw cells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 6 (1994), S. 3267-3275 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surfactant influence on the bubble motion in a Hele–Shaw cell was studied experimentally. In order to differentiate the cases with and without the surfactant influence, the motion of air bubbles and water drops driven by silicone oil was investigated. The water drops contained a predetermined amount of an organic surfactant (sodium dodecyl sulfate), so that the dependence of their motion on the surfactant concentration could be studied systematically. In case of air bubbles in silicone oil, surfactants were likely to have negligible influence, although they might be present as contaminants, and their translational velocities were observed to be close to the prediction of Taylor and Saffman [Q. J. Mech. Appl. Math. 12, 265 (1959)]. The bubble shapes were also in accordance with available theories for a surfactant-free system. The water drops, on the other hand, behaved very differently, in that the translational velocities were smaller by an order of magnitude and their shapes were very unusual. These observations are apparently consistent with those of Kopf-Sill and Homsy [Phys. Fluids 31, 18 (1988)], and the present study suggests that the perplexing observations by them may be due to the influence of surface-active contaminants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868059
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of interlayer coupling in NiFeCo/Cu/NiFeCo/FeMn spin valve structures by lowering argon sputtering pressure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered spin valve heterostructures of NiFeCo/Cu/NiFeCo/FeMn were prepared to examine the effect of the argon sputtering pressure on the interlayer coupling between two ferromagnetic layers. The coupling strength was found to be closely related to the argon sputtering pressure. As the argon sputtering pressure is varied from 6 to 1 mTorr, the coupling field is reduced from 13.6 to 0.5 Oe. In particular, the sample deposited at 1 mTorr exhibits a coupling field of 0.5 Oe and a resistance change of 1.7% for the field step of 0.1 Oe leading to a sensitivity as large as 17% Oe. The reduced interlayer coupling is attributed to the modified topography of NiFeCo/Cu/NiFeCo interfaces. Atomic force microscope analyses support the dominant role of a topography-related effect in reducing the interlayer coupling strength. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118256
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of soluble surfactants on the motion of a finite bubble in a capillary tube (1992)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 2335-2347 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady motion of a long inviscid bubble displacing a viscous fluid in a capillary tube was first analyzed by Bretherton [J. Fluid Mech. 10, 166 (1961)] in the limit of small capillary number (Ca). While his theoretical prediction for the wetting film thickness left behind the moving front of the bubble showed good agreement with experimental observations for a moderately small Ca, it underpredicted the film thickness when Ca was smaller than about 10−4. In an attempt to resolve this discrepancy, several investigators studied the Marangoni effects of surface contaminants and predicted that the film thickness could be increased by a maximum factor of 42/3 if the surfactant transport is bulk-diffusion controlled. This prediction, however, is limited to the case of a semi-infinitely long bubble. The present study examines the motion of a finite length bubble in the presence of a small amount of surfactants. Both front and rear ends of the bubble are analyzed in the limit of small capillary number. The results indicate that due to the accumulation of the surfactant at the rear end of the bubble, the film thickening effect of the surfactant occurs only when the bubble length is larger than a certain critical value. It is also shown that the total pressure drop to drive the finite bubble through the capillary tube increases linearly with the length of the bubble as long as the bubble length is smaller than the critical value. When the bubble is longer than the critical value, the pressure drop does not increase any longer but remains to be constant. It appears that these results are capable of explaining the experimental observations of Schwartz and co-workers [J. Fluid Mech. 127, 259 (1986)] in which the film-thickening behavior at low Ca was shown to be dependent on the bubble length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.858475
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  • 6
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    Patterns of percutaneous transthoracic needle biopsy (PTNB) of the lung and risk of PTNB-related severe pneumothorax: A nationwide population-based study (2020)
    Public Library of Science
    Details
    Publication Date: 2020-07-10
    Electronic ISSN: 1932-6203
    Topics: Medicine , Natural Sciences in General
    Published by Public Library of Science
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  • 7
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    A hybrid ferroelectric-flash memory cells (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-30
    Description: A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O 3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm 2 V −1 s −1 of field-effect mobility, 190 mV dec −1 of substhreshold slope, and 8 × 10 5 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to −5 V), faster P/E switching speed (50/500  μ s), long retention time (〉10 years), and excellent fatigue P/E cycle (〉10 5 ) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Effect of Ca incorporation on the dielectric nonlinear behavior of (Ba, Ca)TiO3 multi layer ceramic capacitors (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-17
    Description: The difference in the dielectric nonlinearity was investigated by contrasting BaTiO 3 and (Ba 0.925 Ca 0.075 )TiO 3 multilayer ceramic capacitors utilizing the first order reversal curve (FORC) distribution based on the Preisach model. Ca incorporation caused a decrease of the dielectric constants in the low field but little differences in the high field region resulting in a steep ac field dependence, which became more significant with the decrease of temperature. Such behavior can be correlated with a decrease of the reversible and an increase of the irreversible FORC distribution near origin by Ca incorporation. These results suggest that Ca incorporation, which is known to cause the asymmetric off-center displacement at Ba-site, has the role of weakly pinning centers that increase the portion of irreversible domain walls that are immobile at low field but can contribute to polarization beyond a threshold field.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Difference between compositional and grain size effect on the dielectric nonlinearity of Mn and V-doped BaTiO3 multilayer ceramic capacitors (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-06-26
    Description: The difference between compositional and grain size effect on the dielectric nonlinearity was contrasted in Mn and V-doped BaTiO 3 multilayer ceramic capacitors utilizing the first order reversal curve (FORC) distribution based on the Preisach model. The high field dielectric constants can be increased either by the adjustment of additive composition, that is, Ba concentration maintaining the same grain size, or by increasing its size. The former compositional effect caused an enhanced dielectric constant in both low and high field region, which can be associated with the increase in the saturation polarization, the reversible and the irreversible FORC distributions near zero bias. The latter grain growth effect, on the other hand, resulted in a decrease of the dielectric constants in the low field but a steep ac field dependence of them, which can be correlated with a decrease of the reversible FORC distribution and a significant increase of the irreversible FORC distribution near origin. These results show that the compositional effect is caused by the increase of the magnitude of the spontaneous polarization and the domain wall density, whereas the grain size effect is caused by the increase in the size of the domain and its wall, which increases the probability of domain pinning by weakly pinning centers but enables its long range motion beyond the threshold field.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Evaluation of Different Roof Materials for the Mitigation of Urban Warming in a Subtropical Monsoon Climate (2020)
    American Geophysical Union
    Details
    Publication Date: 2020-07-16
    Print ISSN: 2169-897X
    Electronic ISSN: 2169-8996
    Topics: Geosciences , Physics
    Published by American Geophysical Union
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