Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2456-2458
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigated coherently strained AlxGa1−xN/GaN heterostructures (0〈x〈0.22) grown by metalorganic vapor phase epitaxy on sapphire with photoluminescence (PL), reflexion and cathodoluminescence experiments. The energetic positions of the free A exciton as a function of the alloy compositions are deduced from temperature dependent PL and from reflexion measurements. We obtain a small bowing parameter and no evidence for a Stokes shift between absorption and emission. Compositional inhomogeneities are present, but the fluctuations are too small to be important for carrier localization. The broadening of the luminescence linewidth in the alloys can be described by statistical disorder of a random alloy. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123879
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