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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium (III) oxide nanocrystals prepared using the inverse microemulsion technique were dispersed in sol–gel TiO2/γ-glycidoxypropyltrimethoxysilane (GLYMO) composite thin films at low temperature. X-ray diffraction analysis and transmission electron microscopy observation show that the erbium (III) oxide nanoparticles have a nanocrystalline structure and their size is in the range from 5 to 30 nm. A relatively strong room-temperature photoluminescence (PL) was observed at 1.531 μm with a full width at half-maximum (FWHM) of 22 nm. The shape, peak position, and FWHM of the PL curve from the composite thin films are quite comparable to those prepared by other methods. The PL peak of the composite thin film reached a maximum intensity after a heat treatment at 300 °C. Fourier transform infrared results show that water and hydroxyl groups are present in the films and are responsible for the luminescence peak intensity reduction of the films heated at higher temperature. © 2001 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4865-4867 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neodymium (III) oxide nanocrystals synthesized by the inverse microemulsion technique were dispersed in sol–gel titania/organically modified silane (ormosil) composite thin films for photonic applications. X-ray diffraction analysis and transmission electron microscopy observation show that the neodymium oxide nanoparticles have a nanocrystalline structure and that the size of the nanoparticles is in the range of 5–60 nm. An intense room-temperature yellow-to-violet upconversion emission at 402 nm (4D3/2→4I13/2) was measured from the composite thin film heated at 100 °C upon excitation with a yellow light at 587 nm. In addition to this violet emission, ultraviolet emission at 372 nm and blue emission at 468 nm were also observed. The lifetime of the violet emission was measured and the mechanism of the upconversion emission is proposed, and they indicate excited-state absorption originating from the long-lived 4F3/2 excited state should be responsible for the yellow-to-violet upconversion. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2892-2894 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel structure, in which the potential profile of the coupled quantum well system is slightly inclined, is proposed for lowering the electric field required to transform the coupled system to a set of uncoupled single quantum wells. Numerical calculations of absorption spectra of graded coupled quantum wells under an electric field and room-temperature photocurrent spectra of fabricated p-i-n diode samples confirm the above enhanced effect.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 184-186 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN film with high transmissivity was deposited onto organic photoconductor (OPC) surface and the surface hardness was increased by between 31.9% and 61.5%, and the surface roughness was also decreased. The electrophotographic properties of the OPC coated with AlN film were also improved, thus confirming the suitability of AlN film for enhancing the operating life of OPC. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2775-2779 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60 meV has been obtained from a sample masked with SixNy/Au and exposed to the laser irradiation. Intermixing was detected in the irradiated regions through the shift of GaAs-like modes to lower frequencies. In addition, the intermixing induced GaInP longitudinal optical modes in the irradiated regions, which is evidence of the intermixing between the upper GaInAs cap and the GaInAsP layer. The spatial resolution of this process, which was obtained from micro-Raman spectra when scanned across the interface of the intermixing mask, was found to be better than 2.5 μm. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2727-2729 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu-doped ZnS nanocrystals were prepared in an inverse microemulsion at room temperature as well as under a hydrothermal condition. X-ray diffraction analysis showed that the diameter of the Cu-doped ZnS nanocrystals particles was about 9 nm. These particles showed a strong photoluminescence intensity and a broad emission band from 490 to 530 nm. The half-width of emission was about 60 nm. Cu-doped ZnS nanocrystals/polymethylmethacrylate composite as a light-emitting layer was used to fabricate a single layer structure electroluminescent device which had low turn on voltage (less than 5 V). The green light of electroluminescence was observed at room temperature. The electroluminescence and photoluminescence spectra were nearly identical at room temperature. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 587-589 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-doped silica glasses prepared by the sol–gel process are desirable for applications in high-power lasers and integrated optical devices. However, its fluorescence could be quenched due to the high hydroxyl (OH−) content. Although this OH− content can be greatly reduced through special gas treatment [Y. Zhou, S. S. Wang, H. L. Liu, Y. L. Lam, Y. C. Chan, and C. H. Kam, EEE J. 8, 109 (1996).], the fluorescence is still considered weak for practical applications. We have used sol–gel aluminum codoping to increase the solubility of the Er3+ ions in a silica glass host and, consequently, significantly enhanced the fluorescence intensity of Er3+-doped sol–gel glass to the extent suitable for practical usage. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 609-611 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Green upconversion emissions at 548 and 528 nm have been obtained from sol-gel derived nanocrystalline Er3+:BaTiO3 films under 980 nm excitation. The green emissions are attributed to the ground-state (4I15/2) -directed transitions from 2H11/2 (528 nm) and 4S3/2 (548 nm) of Er3+ ions. Analysis of the temporal evolution of the emission at 548 nm shows that both excited state absorption of individual ion and energy transfer between the two neighboring ions contribute to the upconversion emissions in Er3+ (3 mol %):BaTiO3 film. The lifetime of the dominant emission at 548 nm is about 90 μs. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2637-2639 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser irradiation followed by rapid thermal annealing was used to induce layer disordering of an InGaAs/InGaAsP laser structure. A band gap shift larger than 160 nm was achieved using energy densities of about 3.9 mJ mm−2 with 4800 pulses of laser irradiation. Transmission electron microscopy and photoluminescence were used to understand the possible effect of the laser irradiation on the material structure. Band gap-tuned lasers exhibiting blueshift up to 82 nm were obtained. This approach offers the prospect of a powerful and relatively simple postgrowth process for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3337-3339 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-dimensional photonic band gap structure based on self-assembled crystals of polystyrene microspheres was fabricated by filling the pores with metallic silver. An almost complete stop band at 580–600 nm is observed in the optical transmission spectra. In comparison with pure polystyrene colloid crystals, the absorption band of Bragg diffraction in the composite was much more intense and broader, due to an enlargement of the contrast between the spheres and the background. A shift to shorter wavelengths in the band occurred because of a decrease in the average refractive index. © 2000 American Institute of Physics.
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