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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 8308-8323 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A combination of experimental methods has been employed for the study of Cl2 adsorption and reaction on Si(100)–(2×1). At 100 K, Cl2 adsorption occurs rapidly to a coverage of ∼0.7 Cl/Si. This is followed by slower adsorption kinetics with further Cl2 exposure. Two Cl adsorption states are observed experimentally. One of the adsorption states is terminally bonded Cl on the inclined dangling bond of the symmetric Si2 dimer sites, with a vibrational frequency, ν(SiCl) of 550∼600 cm−1. These bonded Cl atoms give four off-normal Cl+ ESDIAD emission beams from the orthogonal domains of silicon dimer sites. The Si–Cl bond angle for this adsorption configuration is estimated to be inclined 25°±4° off-normal. The second Cl adsorption state, a minority species, is bridge bonded Cl with ν(Si2Cl) of ∼295 cm−1 which produces Cl+ ion emission along the surface normal direction. Both adsorption states are present at low temperatures. Irreversible conversion from bridge bonded Cl to terminally bonded Cl begins to occur near 300 K; the conversion is complete near ∼673 K. LEED studies indicate that the (2×1) reconstruction for the substrate is preserved for all Cl coverages. The most probable Cl+ kinetic energy in electron stimulated desorption, ESD, is 1.1−+0.30.6 eV. A significant adsorbate-adsorbate quenching effect reducing the Cl+ ion yield in ESD occurs above a Cl(a) coverage of ∼0.5 ML (monolayer) due to interadsorbate interactions. The maximum Cl+ yield is about 4×10−7 Cl+/e at an electron energy of 120 eV. Temperature programmed desorption results show that SiCl2 is the major etching product which desorbs at about 840 K.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 4507-4512 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Profile effects of the radiation, temperature, and the effect of atomic processes on thermal condensation instability in the tokamak edge are considered. The most important influence comes from a strong condensation effect due to the atomic processes and particle transport. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5581-5585 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Thermal broadening of Cl+ electron stimulated desorption ion angular distribution (ESDIAD) patterns, related to the vibrational motion of the adsorbate, has been investigated by subtraction of patterns measured at different temperatures. In the case of Cl on Si(100), the observed difference pattern between 130 and 305 K indicates that azimuthally isotropic motion of Cl occurs about the most probable Si–Cl bond direction. Equal distributions from the in-plane and out-of-plane bending motions are observed, correlating with the ∼200 cm−1 frequencies associated with these motions.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 2763-2765 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-consistent radial electric field shear generated by a drift-thermal turbulence is studied in some detail. A set of new dynamical equations is derived. In this model, there exist three kinds of equilibrium states. The first is the zero shear state of the radial electric field; the second is the positive shear state of the radial electric field; and the third is the negative shear state of the radial electric field. But only the negative shear state may be stable. Two kinds of stable states with the negative shear radial electric field are relevant to the behavior such as that exhibited by high (H) mode and by edge localized modes (ELMs), respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 6837-6845 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The thermal behavior of NO on (flat) Pd(111) and (stepped) Pd(112) has been investigated by temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), and Auger electron spectroscopy (AES) techniques. NO is shown to adsorb molecularly on both Pd(111) and Pd(112) in the temperature range 300–373 K. NO desorbs molecularly from Pd(111) near 500 K with evidence for slight NO dissociation. In contrast, on Pd(112), in addition to NO, relatively large amounts of N2(7x) and N2O(15x) are observed to desorb near 500 K, compared to Pd(111). This result indicates that the influence of the step sites on Pd(112) is to catalyze the decomposition of NO upon heating. This is a surprising result in light of the fact that NO molecules preferentially bind to terrace sites, instead of step sites, on Pd(112). HREELS measurements indicate the presence of small amounts of surface-bound O (resulting from NO thermal decomposition) coadsorbed with NO on both Pd(111) and Pd(112) after NO adsorption at 373 K, followed by 490 K annealing. In addition, HREELS provides evidence for the existence of subsurface O formed only on Pd(112) during this procedure. The presence of steps on Pd(112) presumably offers an efficient pathway for O incorporation within the outermost Pd layers, as no spectroscopic evidence for subsurface O exists for Pd(111). Annealing both surfaces to 550 K induces the diffusion of both surface O and subsurface O into the Pd bulk.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 2946-2950 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Characteristic chlorine bonding sites have been detected on a vicinal Si(100) single crystal surface exposing Si(100) terraces, 7–8 Si atoms in width. These terraces are separated by two-atom layer height steps. Following annealing to 673 K, three Cl+ beams are observed by the electron stimulated desorption ion angular distribution method. Two of the Cl+ beams originate from silicon-dimer dangling bond sites on the Si(100) terraces. The third Cl+ beam is associated with the Si–Cl bond on the step sites, and under zero field conditions it emits Cl+ at a polar angle of 24±2° with respect to the 〈100〉 direction, in the downstairs direction. The direction of Cl+ emission from the step site is qualitatively consistent with the theoretical model of the step reconstruction proposed by Chadi. © 1995 American Institute of Physics.
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  • 7
    Publication Date: 2015-04-28
    Description: A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 8
    Publication Date: 2019
    Description: 〈p〉Cytosine and adenine base editors (CBEs and ABEs) are promising new tools for achieving the precise genetic changes required for disease treatment and trait improvement. However, genome-wide and unbiased analyses of their off-target effects in vivo are still lacking. Our whole genome sequencing (WGS) analysis of rice plants treated with BE3, high-fidelity BE3 (HF1-BE3), or ABE revealed that BE3 and HF1-BE3, but not ABE, induce substantial genome-wide off-target mutations, which are mostly the C-〉T type of single nucleotide variants (SNVs) and appear to be enriched in genic regions. Notably, treatment of rice with BE3 or HF1-BE3 in the absence of single-guide RNA also results in the rise of genome-wide SNVs. Thus, the base editing unit of BE3 or HF1-BE3 needs to be optimized in order to attain high fidelity.〈/p〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Natural Sciences in General
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  • 9
    Publication Date: 2019
    Description: 〈p〉Cytosine and adenine base editors (CBEs and ABEs) are promising new tools for achieving the precise genetic changes required for disease treatment and trait improvement. However, genome-wide and unbiased analyses of their off-target effects in vivo are still lacking. Our whole-genome sequencing analysis of rice plants treated with the third-generation base editor (BE3), high-fidelity BE3 (HF1-BE3), or ABE revealed that BE3 and HF1-BE3, but not ABE, induce substantial genome-wide off-target mutations, which are mostly the C-〉T type of single-nucleotide variants (SNVs) and appear to be enriched in genic regions. Notably, treatment of rice with BE3 or HF1-BE3 in the absence of single-guide RNA also results in the rise of genome-wide SNVs. Thus, the base-editing unit of BE3 or HF1-BE3 needs to be optimized in order to attain high fidelity.〈/p〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 10
    Publication Date: 2018
    Description: 〈p〉The energy dispersion of fermions or bosons vanishes in momentum space if destructive quantum interference occurs in a frustrated Kagome lattice with only nearest-neighbor hopping. A discrete flat band (FB) without any dispersion is consequently formed, promising the emergence of fractional quantum Hall states at high temperatures. Here, we report the experimental realization of an FB with possible nontrivial topology in an electronic Kagome lattice on twisted multilayer silicene. Because of the unique low-buckled two-dimensional structure of silicene, a robust electronic Kagome lattice has been successfully induced by moiré patterns after twisting the silicene multilayers. The electrons are localized in the Kagome lattice because of quantum destructive interference, and thus, their kinetic energy is quenched, which gives rise to an FB peak in the density of states. A robust and pronounced one-dimensional edge state has been revealed at the Kagome edge, which resides at higher energy than the FB. Our observations of the FB and the exotic edge state in electronic Kagome lattice open up the possibility that fractional Chern insulators could be realized in two-dimensional materials.〈/p〉
    Electronic ISSN: 2375-2548
    Topics: Natural Sciences in General
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