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  • Springer  (500)
  • American Association for the Advancement of Science  (50)
  • Blackwell Publishing Ltd  (19)
  • American Institute of Physics (AIP)
  • Molecular Diversity Preservation International (MDPI)
  • Society of Economic Geologists (SEG)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Theoretical and applied genetics 71 (1986), S. 765-771 
    ISSN: 1432-2242
    Keywords: Zea mays L ; Restriction fragment length polymorphism (RFLP) ; Genetic mapping ; B-A translocations ; Recombinant inbreds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Strain identification in Zea mays by restriction fragment length polymorphism should be feasible due to the high degree of polymorphism found at many loci. The polymorphism in maize is apparently higher than that currently known for any other organism. Five randomly selected maize inbred lines were examined by Southern filter hybridization with probes of cloned low copy sequences. Typically, several alleles could be distinguished among the inbred lines with any one probe and an appropriately selected restriction enzyme. Despite considerable polymorphism at the DNA level, 16 RFLP markers in three inbred lines of maize were examined for six to 11 generations and found be stable. Mapping of RFLP markers in maize can be accelerated by the use of B-A translocation stocks, which enable localization of a marker to chromosome arm in one generation. The use of recombinant inbred lines in further refinement of the map is discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Plant molecular biology 8 (1987), S. 251-264 
    ISSN: 1573-5028
    Keywords: chromatin structure ; DNase I hypersensitivity ; gene expression ; sucrose synthetase ; Zea mays
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The local chromatin structure of the Shrunken-1 (Sh) gene of maize was probed by analyzing DNase I hypersensitivity. Sh encodes the gene for sucrose synthetase, a major starch biosynthetic enzyme, which is maximally expressed in the endosperm during seed maturation. In addition to general DNase I sensitivity, specific DNase I hypersensitive sites were identified in endosperm chromatin that mapped near the 5′ end of the Sh gene. The pattern of hypersensitive sites and their relative sensitivity were altered in other non-dormant tissues that produce little or no enzyme. However, some changes in chromatin structure appear to be independent of Sh gene expression and may reflect general alterations associated with plant development. The chromatin structure of several sh mutations, induced by Ds controlling element insertions, was also analyzed. Although the insertions perturbed expression of the gene, there were no notable effects on local chromatin structure.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 1987-11-13
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6098-6100 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stage 2 CocMn1−cCl2-graphite intercalation compounds (0≤c≤1) approximate two-dimensional site-random XY spin systems with a competition between ferromagnetic [J(Co–Co) and J(Co–Mn)], and antiferromagnetic exchange interactions [J(Mn–Mn)]. The magnetic phase diagram and critical behavior of these compounds are studied by means of ac and dc magnetic susceptibility. For c≥ (R18)0.45 the phase transition occurs between the paramagnetic phase and the ferromagnetic phase. The critical exponents of γ and β do not change with dilution of Mn atoms: γ=2.31 and β=0.085 for c=0.90.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3566-3569 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe fast recovery at a wavelength of 1550 nm in a multiple-quantum-well (MQW) saturable absorber with InGaAsP quaternary wells and barriers using electric-field-induced carrier sweepout. The MQW SA is integrated with a distributed Bragg reflector in a p-type–intrinsic–n-type structure. Pump–probe measurements show that the recovery time can be reduced from 〉900 to 28 ps by application of a 151 kV/cm sweepout field. We measure the dependence of the recovery time on the energy of the saturating pulse and explain our results in terms of carrier dynamics in the sweepout field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 64-66 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast relaxation dynamics of light and heavy holes in GaAs following femtosecond valence-to-conduction-band excitation are measured by probing the light- and heavy-to-split-off hole transitions at different midinfrared wavelengths using the recently developed broadly tunable femtosecond optical parametric oscillator. The initial relaxation times are less than 75 fs, and a spectral hole-burning effect is seen. The results suggest that carrier–carrier and optical-phonon scattering, in particular, polar optical-phonon scattering, are the primary processes leading to the initial redistribution of heavy and light holes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1734-1736 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultrafast relaxation dynamics of split-off holes in GaAs are studied using a time-resolved two-wavelength excitation luminescence technique. Following valence-to-conduction-band transitions that are excited by near-infrared femtosecond pulses, delayed midinfrared femtosecond pulses are used to promote holes from the heavy-hole band to the split-off-hole band. The subsequent conduction-to-split-off-hole luminescence indicates that the room-temperature lifetime of split-off holes in GaAs is approximately 50 fs. The accompanying changes in conduction-to-heavy-hole-and-light-hole luminescence when holes are transferred to the split-off band are also observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3341-3343 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-repetition-rate, femtosecond optical parametric oscillator based on bulk periodically poled lithium niobate is described. This optical parametric oscillator is continuously tunable from 1.12 to 1.50 μm in the signal branch, and signal pulses as short as 60 fs have been observed. The corresponding turning range for the idler branch is from 1.68 to 2.72 μm. Modifications which should result in a femtosecond optical parametric oscillator with a pumping threshold of less than 50 mW are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1664-1666 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the switch-off and recovery dynamics of a vertical-cavity surface-emitting semiconductor laser induced by injection of near-infrared or midinfrared femtosecond optical pulses. The laser is switched off by carrier-density depletion or carrier-heating effects, depending on the spectral range of the injected pulses. In both cases, the recovery of the laser output can be described by standard rate equations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1442-1444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A prominent theme in inorganic materials research is the creation of uniformly flat thin films and heterostructures over large wafers, which can subsequently be lithographically processed into functional devices. This letter proposes an approach that will lead to thin film topographies that are directly counter to the above-mentioned philosophy. Recent years have witnessed considerable research activity in the area of self-assembly of materials, stimulated by observations of self-organized behavior in biological systems. We have fabricated uniform arrays of nonplanar surface features by a spontaneous assembly process involving the oxidation of simple metals, especially under constrained conditions on a variety of substrates, including glass and Si. In this letter we demonstrate the pervasiveness of this process through examples involving the oxidation of Pd, Cu, Fe, and In. The feature sizes can be controlled through the grain size and thickness of the starting metal thin film. Finally, we demonstrate how such submicron scale arrays can serve as templates for the design and development of self-assembled, nanoelectronic devices. © 2001 American Institute of Physics.
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