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  • ELECTRONIC EQUIPMENT  (3)
  • MACHINE ELEMENTS AND PROCESSES  (2)
  • 1970-1974  (5)
  • 1930-1934
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Year
  • 1
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    Current conduction in junction gate field effect transistors (1970)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.
    Keywords: ELECTRONIC EQUIPMENT
    Type: NASA-CR-127481
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Differential drain resistance of field-effect transistors beyond pinch-off - A comparison between theory and experiment (1970)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: Differential drain resistance calculation for junction field effect transistors
    Keywords: ELECTRONIC EQUIPMENT
    Type: ; 63 (
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Magnetoresistance devices Progress report (1970)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Magnetoresistance devices and flash evaporation equipment design for indium antimonide research
    Keywords: ELECTRONIC EQUIPMENT
    Type: NASA-CR-86382 , PR-94/70/NASA-028
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 4
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    Research study on materials processing in space, experiment M512 (1973)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C), by vapor growth, and by growth from metallic solutions. It has been established that growth from metallic solution can produce material with high, and perhaps with the highest possible, chemical homogeneity and crystalline perfection. Growth of GaAs from metallic solution can be performed at relatively low temperatures (about 600C) and is relatively insensitive to temperature fluctuations. However, this type of crystal growth is subject to the decided disadvantage that density induced convection currents may produce variations in rates of growth at a growing surface. This problem would be minimized under reduced gravity conditions.
    Keywords: MACHINE ELEMENTS AND PROCESSES
    Type: NASA-CR-120418
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 5
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    Development of chip passivated monolithic complementary MISFET circuits with beam leads (1972)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.
    Keywords: MACHINE ELEMENTS AND PROCESSES
    Type: NASA-CR-123742
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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