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  • 1
    Electronic Resource
    Electronic Resource
    Effect of the confining potential on the magneto-optical spectrum of a quantum dot (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3435-3438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy levels of electrons confined to a circular quantum well with hard walls are calculated in the presence of a perpendicular magnetic field. The results are compared with the case of soft-wall confinement (parabolic potential). There are important differences in the transition energies of the magneto-optical spectrum: (i) in contrast to the parabolic case where only two transition energies are found, in the hard-wall case there are many transitions possible which have different energies. Only a small number of them however have sufficient oscillator strength to be observable; (ii) with increasing magnetic field the energies approach the two-dimensional results much faster than for the soft-wall case. In quantum dots with many electrons we calculate the Fermi energy as a function of the magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346351
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  • 2
    Electronic Resource
    Electronic Resource
    Response function of a Hall magnetosensor in the diffusive regime (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2006-2012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional electron gas systems patterned into micrometer Hall bars can be used as Hall magnetosensors. In this way, ballistic Hall probes have already been studied and used successfully. Here, the response function of a Hall sensor is determined in the diffusive regime, which allows this device to be used as a magnetosensor for the determination of inhomogeneous magnetic field distributions. Furthermore, the influence of the geometry of the Hall bar on this response function, such as circular corners and asymmetry in the probes, is also investigated and appears to be non-negligible. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1487909
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical investigation of CoSi2/Si1−xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1151-1156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1−xGex Schottky barrier diodes grown from Co/Si/Si1−xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1−xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360913
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  • 4
    Electronic Resource
    Electronic Resource
    New method of controlling the gaps between the minibands of a superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1106-1108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that it is possible to control the gap between the minibands of a superlattice by introducing positive barriers in the wells of the superlattice. An appropriate choice of the position, the width, and the height of these barriers achieved by standard methods can reduce or even close the minigaps of the superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101671
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  • 5
    Electronic Resource
    Electronic Resource
    Asymmetric Stark shifts in In0.18Ga0.82As/GaAs near-surface quantum wells: The image charge effect (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5246-5251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate theoretically the electronic structure of InxGa1−xAs/GaAs near-surface quantum wells within the framework of the effective mass theory. We found that the energies of electron and hole states depend sensitively on the capped layer thickness, and the Stark shift is asymmetric with respect to the applied electric field, i.e., the blueshifts or redshifts are determined by the direction and the strength of the electric field. The asymmetric Stark shift is due to the image charge effect and the Coulomb interaction. The spatial distribution of the electron and hole changes significantly when the thickness of the capped layer and the electric field is varied. The exciton binding energy is enhanced significantly by the image charge effect and decreases rapidly with increasing capped layer thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314905
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusive transport and optimization of the hybrid Hall effect device (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8088-8092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the temperature dependent Hall resistance RH of a new magnetoelectronic device consisting of a micron scale Hall cross which is subjected to the fringe field of a ferromagnetic film with in-plane magnetization, placed on top of it. External application of a weak in plane magnetic field yields reversing of the magnetization and consequently modulates RH. Starting from the continuity equation, we calculate numerically the steady state electrical potential and current distributions in the Hall device and show that the temperature dependency can be well understood in the diffusive regime. We make a detailed investigation of the influence of different parameters on the output of this device. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373502
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  • 7
    Electronic Resource
    Electronic Resource
    Nonlinear transport phenomena in a triangular quantum well (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1708-1710 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured transport properties in an AlGaAs/AlxGa1−xAs, triangular quantum well whose energy spectrum has been varied by means of gate bias. We have observed several nonlinear effects in the lateral conductance arising at positive gate voltages as the increasing Fermi level is moved toward the lowering energy positions of the excited subbands in the quantum well. We interpret our results in terms of electron population of the excited subbands in which electrons possess low mobility. Finally, we find new features at high lateral voltages which are considered to be an evidence of previous predicted electrophonon resonance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106225
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  • 8
    Electronic Resource
    Electronic Resource
    Hall potentiometer in the ballistic regime (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1600-1602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate theoretically how a two-dimensional electron gas can be used to probe local potential profiles using the Hall effect. For small magnetic fields, the Hall resistance is inversely proportional to the average potential profile in the Hall cross and is independent of the shape and the position of this profile in the junction. The bend resistance, on the other hand, is much more sensitive on the exact details of the local potential profile in the cross junction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123629
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  • 9
    Electronic Resource
    Electronic Resource
    Hall magnetometer in the ballistic regime (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte Carlo simulation of the ballistic motion of electrons in a mesoscopic Hall bar containing a local inhomogeneous magnetic field profile is presented. We find that in the regime of low magnetic fields, the Hall resistance is determined by the average magnetic field in the cross junction and is independent of the shape and position of this profile in the junction. Information on the size of the local magnetic field profile can also be obtained from the Hall measurement. The bend resistance, on the other hand, is much more precise on the exact details of the local magnetic field in the cross junction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120759
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  • 10
    Electronic Resource
    Electronic Resource
    Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 117-119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron capture times in a quantum well (QW) structure with finite electron density are calculated for electron-electron (e-e) and electron-polar optic phonon (e-pop) scattering. We find that the capture time oscillates as function of the QW width for both processes with the same period, but with very different amplitudes. For an electron density of 1011 cm−2 the e-e capture time is 101−103 times larger than the e-pop capture time except for QW widths near the resonance minima, where it is only 2−3 times larger. With increasing density the e-e capture time decreases and near the resonance becomes smaller than the e-pop capture time. Our e-e capture times are three orders larger than the results of Blom et al. [Appl. Phys. Lett. 62, 1490 (1993)]. The role of the e-e capture in QW lasers is therefore readdressed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116207
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