Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2534-2536
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Depletion mode heterostructure transistors with InGaAs channel have been fabricated by depositing the gate metallization directly on a semi-insulating Fe:InP layer grown by metalorganic chemical vapor epitaxy. The quantum well channel layer, as thin as 100 A(ring), shows high electron mobility of 8000 V/cm2 s at room temperature and up to 55 000 V/cm2 s at 77 K. The enhanced gate breakdown voltage results in 1 μm gate devices with transconductance of 210 mS/mm and a complete pinch-off at a low gate bias of −0.1 V. Preliminary high-frequency measurements are also discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100200
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