Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 2634-2636
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose a new theory of entropy-driven, charge-state-controlled metastability in semiconductors. The entropy change due to metastable defect ionization near 300 K reduces the Gibbs free energy by up to 0.1 eV. This affects equilibrium populations of the various defect charge states and configurations. An example is found in the experiment of Hamilton, Peaker, and Pantelides [Phys. Rev. Lett. 61, 1679 (1988)] in which a deep level transient spectroscopy signal suddenly disappears during cooling when the ionization entropy term causes a defect's stable local energy minimum to become metastable.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101959
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