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  • 1985-1989  (82)
  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions of iron thin films on silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5246-5250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of iron thin films on silicon have been investigated by transmission electron microscopy. FeSi was found to form after 400 °C annealing. Small amount of Fe3Si was detected in samples annealed at 450 to 500 °C. β-FeSi2 grains were predominant with a few FeSi grains remained in samples annealed at 600 °C. β-FeSi2 was found to be the dominant phase, whereas α-FeSi2 was predominant in samples annealed at 900–1100 °C in N2 ambient and in vacuum, respectively. Two-step annealings were effective in promoting the growth and improving the quality of epitaxial FeSi2. More uniform growth of epitaxial FeSi2 was observed for samples annealed in vacuum than those heat treated in N2 ambient. The mechanisms of epitaxial growth and the influence of impurities on the interfacial reactions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335264
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high-dose As+-implanted (001) Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+-implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102045
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  • 3
    Electronic Resource
    Electronic Resource
    Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy-like structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy -like structure was observed. Single-phase samples, tetragonal in structure with a=0.380±0.001, c=1.195±0.001 nm, and of P4/mmm space group, were prepared. The results represent the first case where Ce substitution significantly raised the Tc of a known compound. The samples were remarkably homogeneous both in composition and structure. The compounds were highly reproducible and stable. The preparative conditions were found to be much less stringent than those of other copper-based high Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101536
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and microstructural characterization of a high Tc superconducting BiSrCaCu oxide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 913-915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and microstructures of a high Tc BiSrCaCuO (BSCCO) compound were characterized by transmission electron microscopy, x-ray diffraction (XRD), and energy dispersive spectrometry (EDS). Convergent beam electron diffraction (CBED) analysis established that the crystal is of mm2 symmetry. Combined with electron diffraction, XRD, and EDS data, the high Tc superconducting BSCCO compound was found to be of the Pnn2 space group, orthorhombic in structure with a=0.540 nm, b=2.689 nm, and c=3.040 nm and with an approximate composition of Bi2Sr2CaCu2Oy. Diffraction contrast analysis indicated that the dislocations are predominantly of screw character with [010] or [001] Burgers vectors. However, edge type dislocations and dislocations with [100] Burgers vector were also observed. The magnitude of the Burgers vector along the [100] direction was determined to be 1/2 [100] by high-resolution lattice imaging. Stacking faults and small-angle grain boundaries were frequently observed. The presence of a high density of defects in the superconducting oxide may facilitate the processing of the material and serve as effective flux line barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100157
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  • 5
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin-film and single-crystal silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1217-1219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayer (a interlayer) in polycrystalline Ti films on single-crystal-silicon has been studied by cross-sectional transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 350–425 °C. The activation energy of the linear growth was measured to be 1.6±0.3 eV. Maximum thicknesses of the a interlayers were measured to be of the order of 10 nm. The formation of an a interlayer was observed in samples annealed at a temperature as high as 600 °C. The formation and growth kinetics of a interlayers in Ti/Si and Ni/Zr systems are compared. Essential factors for the formation and growth of an a interlayer are discussed. The results represent the first report on the growth kinetics of an a interlayer in metal thin films on single-crystal silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100720
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  • 6
    Electronic Resource
    Electronic Resource
    Partial epitaxial growth of cobalt germanides on (111)Ge (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1588-1590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized epitaxial Co5Ge7 and CoGe2 have been grown in cobalt thin films on (111)Ge in the solid phase epitaxy regime. The orientation relationships between epitaxial germanides and the substrates as well as the configuration of the interfacial dislocations were analyzed by transmission electron microscopy (TEM) in detail. Surface morphology was examined by scanning electron microscopy. The results obtained from Read camera glancing angle x-ray diffraction and Rutherford backscattering channeling analysis were found to corroborate with those from TEM examinations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98563
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  • 7
    Electronic Resource
    Electronic Resource
    Direct observation of discrete layers of dislocation loops near the projected ion ranges in high-dose P+-implanted (001)Si by cross-sectional transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 565-567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of discrete layers of dislocation loops near the projected ion ranges (Rp loops) of 65–80 keV, high-dose (5×1015–2×1016/cm2) P+-implanted (001)Si was observed by cross-sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors of Rp loops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance of Rp loops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation of Rp loops. Using Rp loops as an indicator of changes in point-defect distribution, a combined XTEM and plan-view TEM study was found to be most appropriate for the study of the precipitation process in high-dose P+-implanted silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101833
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  • 8
    Electronic Resource
    Electronic Resource
    Structural characterization of a TlCaBaCu oxide in Tc onset=155 K and Tc zero=123 K superconducting specimens (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1434-1436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure of a Tl-Ca-Ba-Cu-O compound in Tc onset=155 K and Tc zero=123 K superconducting specimens was characterized by transmission electron microscopy. Convergent beam electron diffraction analysis established that the phase is of P4/mcc space group. The lattice parameters of the phase were determined to be a=b=0.394 nm and c=3.95 nm. The phase was found to be primarily of a ten-subcell structure by both high-resolution lattice imaging and diffraction pattern analysis. The composition of the grains with the ten-subcell structure being predominant was measured by energy dispersive spectrometry to be TlCa2Ba3Cu4Ox. Polytypes of the phase with four- and five-subcell structures were also observed. The five-subcell structure was identified to be of P4/mmm space group with a=b=0.394 nm and c=1.97 nm. The compositions of the specimens were measured to vary in composition ratios of Tl, Ca, Ba, and Cu from 1:2:2:3 to 1:2:3:4. The results strongly suggested that the TlCa2Ba3Cu4Ox phase is a high Tc superconducting phase with an exciting possibility that superconducting transition occurs at 155 K for this phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100459
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  • 9
    Electronic Resource
    Electronic Resource
    Interfacial reactions of cobalt thin films on BF+2 ion-implanted (001) silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3505-3511 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of cobalt thin films on BF+2 -implanted (001)Si have been studied by both cross-sectional and plan-view transmission electron microscopy as well as by sheet resistance measurements. The implantation-amorphous samples were found to favor the formation of CoSi2 at 400 °C and laterally uniform growth of the phase at higher temperatures. Two discrete layers of fluorine bubbles were observed in cobalt silicides in all BF+2 -implanted samples annealed at 400–800 °C. In 800–900 °C annealed samples, large bubbles were often observed to distribute near the CoSi2 grain boundaries. The results indicated that (1) fluorine atoms diffuse rapidly at a temperature as low as 400 °C, and (2) appreciable amounts of fluorine atoms are present with low solubility in cobalt silicides after annealing at 400–900 °C. The residual interstitial defects in BF+2 -implanted samples were completely annihilated by CoSi2 formation at 800–900 °C. The elimination of all interstitial defects in these samples is attributed to the injection of a high density of vacancies which were generated during silicide formation. The electrical resistivity of CoSi on blank silicon was measured to be about 350 μΩ cm. The presently measured electrical resistivity value is believed to be one of the most accurate values obtained for CoSi to date. Factors influencing the formation of cobalt silicides and defect structure are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341487
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  • 10
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of IrSi3 on (111) and (001) silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1163-1167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to the study of interfacial reactions of iridium thin films on silicon with particular emphasis on the epitaxial growth of IrSi3 on (111) and (001)Si. The formation of precursor phases, IrSi and IrSi1.75, were found to occur mainly in the temperature ranges of 300–500 and 600–900 °C, respectively. The stable IrSi3 was found to grow epitaxially on (111) and (001)Si annealed at 1000–1100 °C. There are three dominant modes of epitaxial IrSi3 on (111)Si and one dominant mode of epitaxial IrSi3 on (001)Si. Interface structures of these different epitaxial modes were determined by diffraction contrast analysis. The quality of IrSi3 epitaxy in terms of the fraction of the silicon surface coverage, size, and the regularity of the interfacial dislocations was found to be the best in (111) samples annealed at 1000 °C. Epitaxial regions of IrSi3, as large as 40 μm in size, were observed on (111)Si. No direct correlation between lattice match and quality of epitaxy could be found. The Burgers vectors of edge-type dislocations for several modes of silicide epitaxy were found to be along the directions with larger lattice mismatches in agreement with a theory by Markov and Milchev [Surf. Sci. 136, 519 (1984)]. A superlattice structure of IrSi3 was found from diffraction pattern analysis. The superlattice structure was determined to be of hexagonal structure and has a unit cell with dimensions three times larger than that reported for IrSi3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340024
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