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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 607-609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range distributions of 10–120 keV 11B+ in polycrystalline Co, Ti, CoSi2, and TiSi2 targets have been measured by secondary ion mass spectrometry. The obtained projected ranges Rp and projected range stragglings ΔRp are within 25% and 10%, respectively, of those predicted using the Monte Carlo computer program trim. By comparison the one-dimensional Boltzmann transport calculation in suprem-3 tends to overestimate Rp by as much as 300% at the highest ion energies.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 344-353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ti films sputter deposited onto single-crystal Si, thermal SiO2, and low-pressure chemical vapor deposited Si3N4 and SiOxNy (x≈y≈1) substrates have been rapid thermal annealed in N2 or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSix, TiOx, δ-TiN, or TiNxO1−x. The results are discussed in light of published Ti-Si-O and Ti-Si-N phase diagrams.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1882-1886 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse-bias leakage of TiSi2/p+-n Si junctions is 〈10 nA/cm2 for 0.1-μm-deep p+-Si with a TiSi2 sheet resistance of 1.7 Ω/sq, and is essentially independent of carrier concentration, and the amount of B consumed during silicidation. Forward-bias current characteristics show that the TiSi2 contacts are ohmic with significant recombination currents and high-level injection at voltages below the series resistance limit. Post-silicidation annealing for 30 min at 920 °C, with or without an overlayer of borophosphosilicate glass, increases the majority-carrier concentration and does not cause B to diffuse out of the Si. Also, minority-carrier lifetimes show a twofold increase after annealing and this results in nearly ideal junctions with leakage that is dominated by diffusion currents. Thus, TiSi2/p+-n Si is thermally stable under conditions that are compatible with glass flow and reflow processing.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1917-1923 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration was studied in Al conductors underlaid with chemically vapor deposited W, and the results compared to the more conventional Al/TiW metallization. In Al/TiW conductors electromigration results in Al whisker growth, causing metal short rather than open-circuit failure. Contrary to expectations, the Al/W metallization was found to be more susceptible to the formation of whiskers during current stress, with Al/W lifetimes reduced by about one-half compared with Al/TiW. The temperature and current density failure dependencies were not significantly affected by the composition of the underlayer. The mechanical stress in the underlayer was not found to significantly affect the stress distribution in the overlying Al film.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A rapid thermal anneal (RTA) in an NH3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 °C in NH3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 °C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi2 phase. In contrast, after a prior 900 °C RTA in NH3, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 °C NH3 anneal. The NH3-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 °C, at which point some increase in contact resistance was measured.
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Expert systems 4 (1987), S. 0 
    ISSN: 1468-0394
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Computer Science
    Notes: Abstract This is the second part of a report which looks at expert systems and the man-machine interface (mmi). The term ‘mmi’ is interpreted in a fairly broad sense to include knowledge acquisition and cognitive aspects of the user interface. Part One of the report (published in the previous issue of Expert Systems) examines what is currently happening in the area of knowledge acquisition in Britain and asks whether it really is the major bottleneck in the production of expert systems.Part Two of the report looks at cognitive aspects of the user interface, including dialogue control, explanation facilities, user models, natural language processing and the effects of new technology. It also considers the very important question of evaluation. Again the report is concerned with what is actually happening in these areas in Britain today.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 28 (1985), S. 1561-1563 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveforms are studied on a layer of uniform vorticity bounding a uniform stream in the absence of gravitational effects. It is shown that the wave trough can develop a notch as the wave amplitude is increased, the angle of the notch being close to 90°. The results are compared briefly with those published recently by Pullin and Grimshaw [Phys. Fluids 26, 1731 (1983)].
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Expert systems 3 (1986), S. 0 
    ISSN: 1468-0394
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Computer Science
    Notes: Abstract: This is a two part report. It looks at expert systems and the man–machine interface (mmi). We use the term mmi in a fairly broad sense. Specifically, we interpret the ‘man’ half of the interaction in two very different ways. Firstly, we look at man in terms of the ‘expert’ and consider the problem of how to get his or her knowledge into an expert system. Part One of the report therefore looks at what is currently happening in the area of knowledge acquisition in Britain and asks whether it really is the major bottleneck in the production of expert systems. Secondly, we look at man in terms of the ‘user’ and consider the best ways of making use of the knowledge once it is in an expert system. Part two of the report looks at cognitive aspects of the user interface, including dialogue control, explanation facilities, user models, natural language processing and the effects of new technology. It also considers the very important question of evaluation. Again we are concerned with what is actually happening in these areas in Britain today.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 319 (1986), S. 545-546 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] A QUIET change has come about over the past 50 years. We now have a different mode of attack on problems of "higher nervous function", or "the mind" or "behaviour". In the 1930s, the alternatives were to use concepts from the nervous system (particularly popular with physiologists, though to some ...
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  • 10
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 335 (1988), S. 778-778 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] GEORGE Miller belongs to the small minority of key figures who have altered the shape of a subject. By origin a psychologist, he seized on the possible connections between that discipline, mathematics, linguistics and engineering, and showed that it was possible to discuss 'mental' events in ...
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