Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 490-492
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this study we examine the permeating of hydrogen into p-type silicon during low-energy hydrogen ion beam bombardment by monitoring boron doping deactivation. This examination is done for various times and two different exposure temperatures. In addition we explore the effect of temperature during subsequent isochronal anneals on the recovery of silicon exposed to a hydrogen ion beam. As a result of these studies, it is found that there are two distinct permeation regions. Each may be characterized by its own apparent diffusion coefficient, activation energy, and recovery process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98376
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