ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (2)
  • 73.40-L  (1)
  • 79.20.Ds  (1)
  • 1985-1989  (2)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (2)
Collection
  • Articles  (2)
Source
Keywords
Publisher
Years
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (2)
  • Physics  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics of laser-annealed silicon diodes (1987)
    Springer
    Applied physics 42 (1987), S. 273-277 
    Details
    ISSN: 1432-0630
    Keywords: 73.40-L
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electrical measurements, performed on As-implanted and laser-annealed silicon diodes, have shown poorI–V characteristics with high values of the recombination current and anomalous C-V characteristics. This behavior is attributed to the existence of defects, created during the ion-implantation process, that can not been annealed by the laser treatment. A best improve in the electrical characteristics is obtained after a post-laser annealing in furnace at 600 °C, however the defects are not completely removed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616562
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ge diffusion into GaAs by pulsed laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 191-196 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Ds ; 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ge diffusion into GaAs from thin evaporated layers as sources is reported. Irradiation with aQ-switched ruby laser gives rise ton-type diffused layers of a thickness from 240 to 710 Å. A strong compensation of the diffused layers, that cannot be removed by thermal annealing, was observed. From the present experimental results it can be inferred that the diffusion coefficient increases at the melting point by 5 to 6 orders of magnitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00939263
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...