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  • Springer  (23)
  • Wiley-Blackwell  (2)
  • Oxford University Press
  • Springer Nature
  • 1985-1989  (26)
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Year
  • 11
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 48 (1989), S. 315-319 
    ISSN: 1432-0630
    Keywords: 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×107Ωcm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×103 cm2/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was ϱ=3.6 × 105Ωcm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of ϱ〉107 Ωcm can be achieved for bulk InP with the purity of nominally undoped material (1015 to 1016cm−3).
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  • 12
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 49 (1989), S. 165-169 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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  • 13
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 41 (1986), S. 253-258 
    ISSN: 1432-0630
    Keywords: 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We compare the electronic properties of gas-phase and implantation doped a-Si:H films and analyze their properties within the framework of Street's auto-compensation model [1]. We find that this model can consistently explain the varying degrees of sensitivity with respect to doping for differently prepared a-Si:H materials. In agreement with sub-band-gap absorption data our analysis indicates that the density of native dangling bond defects is increased when the film thickness is decreased and when thin films are further subjected to ion bombardment. Considering the temperature dependence of conductivity, we find that the auto-compensation model can provide an explanation for the high-temperature kink in the conductivity of doped a-Si:H films but that it fails to account for the experimentally observed universality of the “Meyer-Neldel-rule” behaviour of the conductivity prefactor in differently prepared and doped a-Si:H films.
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  • 14
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 45 (1988), S. 41-51 
    ISSN: 1432-0630
    Keywords: 66.3L ; 68.60 ; 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We show that, through the diffusive re-arrangement of Si-H bonds, the a-Si∶H lattice is able to establish thermal equilibrium between the densities of band tail trapped charge carriers and dangling bond defects. When this equilibrium is disturbed by changes in temperature, carrier injection or illumination, dangling bond defects have to be generated or annealed out via H-diffusion processes. Based on the concept of charge-induced bond breaking, we develop a mathematical formalism for the diffusive re-arrangement of Si-H bonds and show that our formalism can account for a variety of observations that have been made in the context of defect-generation and annealing experiments.
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  • 15
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary By in situ hybridization, Y-specific DNA sequences were localized on Xp22.3-Xpter of one of the two X chromosomes in all of eleven XX males studied. In nine of the cases the presence of the Y-specific DNA did not affect random X inactivation in fibroblasts. Fibroblasts of the other two cases showed a preferential inactivation of the Y DNA-carrying X chromosome. In only one of these two exceptions blood lymphocytes could also be studied, and here, random inactivation of the Y DNA-carrying X chromosome occurred. Furthermore, the gene dosage of steroid sulfatase (STS) was examined by Southern blot analysis. In ten of the cases including the one showing random X-inactivation in lymphocytes but not in fibroblasts, a double dosage of the STS gene is present. The remaining case with non-random inactivation shows a single STS gene dosage. This case was reported previously to have STS enzyme activity in the male range. It is assumed that, as a consequence of an unequal X-Y interchange, a deletion of X-specific DNA sequences may result in the preferential inactivation of the Y DNA-carrying X chromosome.
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  • 16
    Electronic Resource
    Electronic Resource
    Springer
    Mineralogy and petrology 39 (1988), S. 245-250 
    ISSN: 1438-1168
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Description / Table of Contents: Zusammenfassung Chemische Analysen von 192, unter dem Binokular ausgelesener Eisenoxidkonzentrate von Proben aus den Eisenerzlagerstätten des Eisernen Vierecks in Brasilien, ergaben keinerlei Unterschiede in den Neben- und Spurenelementgehalten zwischen den Itabiriten und den Reicherzen (Fe 〉63%). Die Mittelwerte von jeweils 171–177 Elementbestimmungen ind folgende: Ca 82± 12 ppm; Co 120± 8; Cr 77± 8; Cu 40± 2; g 40±5; Mn 170±28; Ni 167±7, P 905±23; Ti 114:L13; V 138±8, Al 1068 ± 174 ppm (52 Proben) und Au 33 ± 8 ppb (50 Proben). Aus Mikrosondenuntersuchungen ergeben sich in Abhängigkeit von den unterschiedlichen Kristallgittertypen des Magnetits und Hämatits verschiedene Substitutionsraten des Eisens durch Nebenelemente. So zeigen Mg und Mn in Magnetiten um eine Vielfaches höhere Werte als in Hämatiten, während Ti im Hämatit wegen der Isotypie des Hämatit-Ilmenit-Gitters deutlich angereichert ist.
    Notes: Summary Chemical investigations of 192 hand-picked iron-oxide concentrates from banded iron-formation of the Iron Quadrangle, Brazil, did not yield any significant difference in minor and trace-element contents between itabirite and iron-ore samples (Fe 〉63%). Mean values (171–177 samples) are: Ca 82 ± 12 ppm; Co 120 ± 8; Cr 77 ± 8; Cu 40 ± 2; Mg 40±5; Mn 170±L28; Ni 167±7; P 905±23; Ti 114±13; V 138±8; Al 1068 ± 174 ppm (52 samples) and Au 33 ± 8 ppb (50 samples). Microprobe results indicate different trends of Fe-substitution by minor elements depending on the different lattice types of magnetite and hematite. Mg and Mn are much more concentrated in magnetite than in hematite whereas hematite is distinctly enriched in titanium due to the isostructural nature of the hematite and ilmenite lattices.
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  • 17
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 23 (1988), S. 1779-1785 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Quartz and keatite are SiO2 polymorphs with relatively dense frameworks containing small voids. Aluminosilicates with small charge compensating cations such as lithium, magnesium and zinc can adopt the same types of structures with the cations occupying the voids. It 1s shown that the lithium content in both quartz- and keatite-type (Li, Mg0.5, Zn0.5)AlSi2O6 solid solutions can be ion exchanged against hydrogen from hot concentrated H2SO4. This ion exchange can be reversed. At high temperatures water can irreversibly be driven off the hydrogen forms. Neither ion exchange nor thermal dehydration affects space group symmetry or framework linkage, but lattice parameter variations indicate considerable framework distortions. Thermal expansion also varies strongly with cation content. The data indicate that during dehydration aluminium ions leave the framework and enter the voids thereby providing charge compensation for the remaining framework aluminium content.[/p]
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  • 18
    ISSN: 1617-4623
    Keywords: Drosophila recessive oncogene ; Mutations ; Molecular cloning ; Mobile elements ; Transcription
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The Drosophila recessive oncogene lethal(2)giant larvae is located at the extreme left end of the second chromosome close to telomeric repetitive sequences. Of the 20 l(2)gl mutant alleles isolated from wild flies in widespread populations of the Soviet Union and California, all but two appear to represent large deletions which have removed the telomeric repetitive sequences and l(2)gl single copy sequences (Mechler et al. 1985). We have analyzed the structure of the two exceptions: the l(2)glGB52 mutation results from the insertion of a single transposable element of the B104 or roo family, whereas the more complex rearrangements of the l(2)glDV275 mutation consists of an 8 kb interstitial deletion whose breakpoints have become associated with a large transposed DNA fragment. Characterization of this fragment shows that it consists of B104 sequences flanked on one side by sequences originating from the chromosomal region 24D. Furthermore, we show that in both mutants normal transcription of the l(2)gl gene is abolished.
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  • 19
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 68 (1987), S. 149-159 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The present study highlights some of the complexities observed in the dynamical properties of one-dimensional quantum spin systems. Exact results for zero-temperature dynamic correlation functions are presented for two contrasting situations: (i) a system with a fully ordered ferromagnetic ground state; (ii) a system at aT c=0 critical point. For both situations it is found that the exact results are considerably more complex than has been anticipated on the basis of approximate approaches which are considered to be appropriate and reliable for such situations. A still higher degree of complexity is expected for the dynamics of quantum spin systems which are nonintegrable. The paper concludes with some observations concerning nonintegrability effects and quantum chaos in spin systems.
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  • 20
    Electronic Resource
    Electronic Resource
    Springer
    Lasers in medical science 4 (1989), S. 3-3 
    ISSN: 1435-604X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Physics , Technology
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