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  • 1
    Electronic Resource
    Electronic Resource
    Rotationally inelastic rates for N2–N2 system from a scaling theoretical analysis of the stimulated Raman Q branch (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 5568-5577 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Self-broadened nitrogen isotropic Q(J) Raman linewidths have been inverted to obtain effective rotation–translation (R–T) state-to-state rate constants using the energy corrected sudden (ECS) formalism. These rate constants are discussed as a function of the rotational levels J and temperature T. Collisional Q(J) line shifts have been investigated by high-resolution inverse Raman spectroscopy (IRS) over a wide temperature range. Semiclassical calculations lead to a clear understanding of their J and T dependence. This exhaustive study of both diagonal and off-diagonal relaxation matrix elements has allowed us to calculate the collisionally narrowed Q branch at high pressure. New measurements of N2 Q branch at high pressure have been performed by IRS. The good agreement of ECS profiles with IRS data, for various pressures and temperatures, underlines the consistency of the present R–T ECS scaling analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455563
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of radiative transport on fluorescence emission (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 53-59 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for radiative transport of electronic excitation energy in solution is presented and applied to the time-resolved and steady-state fluorescence of DPA (9, 10-diphenylanthracene) in benzene. The model predicts a nonexponential and wavelength-dependent decay at high concentrations, in agreement with experimental results. Recovered parameters, along with the time-resolved emission spectrum, are interpreted on the basis of a progression of the excitation with time farther into the cell, after the excitation pulse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456504
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  • 3
    Electronic Resource
    Electronic Resource
    The anharmonic oscillator at a finite temperature. Comparison of quantum and classical stochastic calculations (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 1749-1758 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: An oscillator with a small, but otherwise arbitrary, perturbing potential is considered immersed in a random cavity radiation. Classical (stochastic) calculations are done when the radiation has a Rayleigh–Jeans spectrum and a complete Planck spectrum (i.e., with zero point). These are compared with the results obtained by a quantum calculation. First, a comparison is made of stationary values, in particular, the energy. Then the emission and the absorption spectra are calculated, in particular, the absorption spectrum for an arbitrary incoming radiation. Finally, a detailed comparison is made of the absorption bands when the perturbing potential has the form λx2K (K=2,3,...). In all cases, it is explicitly shown that the quantum and the classical behavior agree in the limit of high temperatures. It is also shown that the classical system immersed in a radiation with complete Planck spectrum is much closer to the quantum system than the fully classical system (with a Rayleigh–Jeans spectrum).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527485
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  • 4
    Electronic Resource
    Electronic Resource
    High quality electron system with variable electron layer thickness in a parabolic quantum well (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1430-1432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the realization of a high quality electron system with variable areal density (ns ) in a selectively doped, parabolic Ax Ga1−x As well. For each ns, quantum oscillations in the magnetoresistance are analyzed to obtain the electron densities of the electric subbands. These densities are in good agreement with the predictions of self-consistent calculations of the subband structure. The data reveal that with increasing ns , the width of the electron system increases so that the effective three-dimensional density and the Fermi energy remain essentially constant. The dependence of the low-temperature electron mobility on ns is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101577
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  • 5
    Electronic Resource
    Electronic Resource
    Fractional quantum Hall effect in a high-mobility GaAs/AlxGa1−xAs multiple quantum well heterostructure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 27-29 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the realization of a high mobility [μ(approximately-equal-to)4.8×105 cm2/(V s)] selectively doped GaAs/AlxGa1−xAs multiple quantum well structure with low density (ns (approximately-equal-to)1.7×1011 cm−2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ(approximately-equal-to)2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100820
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: Effect of substrate temperature on migration of Si in planar-doped GaAs [Appl. Phys. Lett. 53, 2504 (1988)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 603-603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102377
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  • 7
    Electronic Resource
    Electronic Resource
    Secondary-ion mass spectrometry study of the migration of Si in planar-doped GaAs and Al0.25Ga0.75As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of substrate temperature Ts during growth by molecular beam epitaxy on the migration of Si atoms in δ-(or planar) doped GaAs and Al0.25Ga0.75As using secondary-ion mass spectrometry (SIMS). Our results for δ-doped GaAs illustrate a measurable spread of Si that increases by ∼80 A(ring) as Ts is varied from 580 to 640 °C. For comparable Ts, the Si spreads further (by ∼350 A(ring)) in δ-doped Al0.25Ga0.75As. For Ts〈580 °C, the width of the Si profiles is determined by the resolution of our SIMS measuring technique. Magnetotransport measurements were also performed on these structures in order to determine the spreading of the dopants. The Si migration measured by SIMS is in qualitative agreement with the transport results; however, the SIMS data indicate larger Si areal densities. Two mechanisms, autocompensation and the electron localization by a DX center, are believed to be responsible for the latter observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101582
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  • 8
    Electronic Resource
    Electronic Resource
    Two-dimensional electron system with extremely low disorder (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2080-2082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of modulation-doped GaAs/AlxGa1−x As heterostructures with extremely low disorder by molecular beam epitaxy. In growing these structures we employed the atomic plane doping technique and ultrathick (〉1000 A(ring)) spacer layers with graded composition. The structures have mobilities (μ) on the order of 1×106 cm2/V s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm−2. Quantum transport measurements in these structures exhibit new fractional quantum Hall states and demonstrate their exceptionally high quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100306
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  • 9
    Electronic Resource
    Electronic Resource
    Realization of a quasi-three-dimensional modulation-doped semiconductor structure (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 791-793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-A(ring)-wide undoped AlxGa1−xAs well bounded by undoped (spacer) and doped layers of AlyGa1−yAs (y〉x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the AlxGa1−xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains (approximately-equal-to)2.5×1011 cm−2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×105 cm2/V s indicating the high quality of the structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99834
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of substrate temperature on migration of Si in planar-doped GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2504-2506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum oscillations in the magnetoresistance of GaAs δ (or planar) doped with Si are analyzed to obtain the electron densities of the electric subbands. We compare these densities with the results of self-consistently calculated subband structures of δ-doped GaAs in which the spread of the dopant atoms (Si) in the growth direction is a fitting parameter. The results indicate that there is negligible spread in structures grown at a substrate temperature TS (approximately-less-than)530 °C, while in structures grown at higher TS there is measurable spread which increases with TS. For TS =640 °C, the Si spread is determined to be (approximately-equal-to)220 A(ring). An examination of the three-dimensional Si densities in these layers indicates that the dominant mechanism for the spreading of Si for TS 〉600 °C is the migration of Si to satisfy the solid solubility limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100225
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