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  • American Institute of Physics (AIP)  (33)
  • National Academy of Sciences  (4)
  • Nature Publishing Group  (2)
  • 1985-1989  (39)
  • 1
    Electronic Resource
    Electronic Resource
    Vibrational state dependence of ionic rotational branching ratios in resonance enhanced multiphoton ionization of CH (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 1374-1376 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We show that rapid evolution of a Rydberg orbital with internuclear distance in a resonance enhanced multiphoton ionization (REMPI) process can have a profound influence on the production of molecular ions in alternative rotational states. This is illustrated by calculations of ionic rotational branching ratios for (2+1') REMPI via the O11 (20.5) branch of the E' 2Σ+(3pσ) Rydberg state of CH. The rotational propensity rule for ionization changes from ΔN=odd (ΔN=N+−Ni) at lower vibrational excitation, as expected from the ΔN+l=odd selection rule, to ΔN=even at higher vibrational levels. This effect is expected to be quite general and should be most readily observable in diatomic hydrides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457161
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  • 2
    Electronic Resource
    Electronic Resource
    Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 236-238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780 °C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101017
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  • 3
    Electronic Resource
    Electronic Resource
    Strain variations in heteroepitaxial InP-on-Si grown by low-pressure metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations in the magnitude and sign of the strain in epitaxial InP directly on (001) Si are studied as a function of layer thickness using photoluminescence and x-ray diffraction techniques. The heteroepilayers were grown by low-pressure metalorganic chemical vapor deposition and showed good quality. We find that biaxial compressive strains are still present in InP layers with thickness up to 0.8 μm. The magnitudes of compressive strains are much larger than those expected from the equilibrium theory. With increasing thickness above 1 μm, the InP/Si layers suffer biaxial tensile strains as a result of differential thermal contraction during the cooling process after growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101137
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  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low-pressure organometallic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2614-2616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on preliminary results of heteroepitaxial growth of Ga0.51In0.49P on Si with a GaAs interlayer by low-pressure organometallic chemical vapor deposition (OMCVD). The surface morphologies and crystalline quality of the films were found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Under optimum conditions, specular single-crystal Ga0.51In0.49P epilayers can be reproducibly obtained. Capacitance-voltage measurements show that the carrier distribution in the grown layer is very uniform. The 77 K photoluminescence spectrum exhibits a strong near-band-edge emission with a half-width of 22 meV. These results can compete with those reported previously for the OMCVD-grown GaxIn1−xP on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100175
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  • 5
    Electronic Resource
    Electronic Resource
    Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2653-2655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-doped GaAs epilayers have been grown by molecular beam epitaxy. This work investigates the relatively unexplored In doping concentration in the range of 1017–1019 cm−3. Enhancement in Hall mobility and photoluminescence intensity have been observed. Proper isoelectronic doping may lead to reduction of the unintentional impurity level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100184
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 880-882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on Si with an intermediate GaAs buffer layer by low-pressure organometallic vapor phase epitaxy is reported. Excellent crystallinity of InP epilayers with specular surfaces can be reproducibly obtained. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/GaAs interface. The 77 K photoluminescence (PL) of the InP layer exhibits a strong near-band-edge emission. No evident shift in PL peak energy for the InP/GaAs/Si sample compared with that for the InP homoepitaxial sample was first observed in this study. These results are superior to those reported previously for the InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99260
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  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of ZnSe on (100) Si by low-pressure organometallic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers were successfully grown on (100) Si substrates by low-pressure organometallic chemical vapor deposition. The initial growth rate is not critical. The optimum growth temperature of ZnSe/Si is higher than that of ZnSe/GaAs. From x-ray and scanning electron microscopy examinations, single crystalline ZnSe epilayers with mirror-like surfaces can be obtained by a simple growth process. Two-step growth process is a suitable way to improve the ZnSe/Si quality. It seems to be able to remove the Zn vacancy which is associated with the photoluminescence broad band. The efficient 77 K photoluminescence indicates that the ZnSe epilayers are of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102185
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  • 8
    Electronic Resource
    Electronic Resource
    Growth and characterization of InP epilayers on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 107-109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy is reported for the first time. Single-crystal InP epilayers with specular surfaces can be obtained. The ZnSe buffer layer, which is evaporated onto the Si substrate in another furnace, is effective in reducing the magnitude of strain in the InP layer. The best room-temperature electron mobility of the undoped InP epilayer can reach 3100 cm2 /(V s) with a carrier concentration of 1.5×1015 cm−3 . It was found that the InP electron mobility is critically dependent on the ZnSe buffer-layer thickness. The efficient photoluminescence compared with that of InP homoepitaxy indicates that the InP heteroepilayer is of high optical quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100383
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of silicon nitride etching by atomic fluorine (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 386-387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the etch rate of silicon nitride by atomic fluorine has been measured using a discharge-flow reactor. The activation energy of this process is 3.55±0.28 kcal/mol, quite similar to activation energies of Si and SiO2 etching, which were also measured (3.02±0.31 and 3.36±0.40 kcal/mol, respectively).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342555
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  • 10
    Electronic Resource
    Electronic Resource
    Sulfur doping behavior of gallium antimonide grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 395-399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sulphur from an electrochemical source has been used to dope GaSb grown by molecular-beam epitaxy. The incorporation of sulphur in the epilayers has been measured by secondary ion mass spectrometry, and the effects of substrate temperature during growth and of the antimony-to-gallium flux ratio have been studied.The incorporation has been found to be a strong function of substrate temperature, varying from ∼100% below 435 °C to ∼1% at 525 °C. The incorporation also increases with antimony overpressure, varying by a factor of 3 on changing the antimony-to-gallium flux ratio from 1:1 to 4:1. The substrate temperature dependence is described by a simple kinetic model. The electrical activity of the incorporated sulphur is shown to be close to 100%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340251
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