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  • Wiley-Blackwell  (42)
  • American Institute of Physics (AIP)  (19)
  • Cambridge University Press  (4)
  • 1985-1989  (49)
  • 1970-1974  (6)
  • 1935-1939  (10)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 510-521 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate of catalytic CO oxidation on Pt(100) and (110) surfaces at low pressures (≤10−4 Torr) and under isothermal conditions may exhibit sustained temporal oscillations which are coupled with periodic transformations of the surface structures between reconstructed and nonreconstructed phases, the latter exhibiting higher oxygen sticking coefficients and hence higher reactivity. With Pt(100) the two surface phases exhibit a much larger difference in reactivity (=oxygen sticking coefficient) than with Pt(110), which effect accounts for the qualitative differences in the oscillatory behavior: if two of the control parameters (say pO2, T) are kept fixed, the third (pCO) may be varied with Pt(100) over a fairly wide range without leaving the oscillatory region. Minor (〈1%) fluctuations of the partial pressures associated with the varying reaction rate are hence without any noticeable effect. Coupling between surface reaction and diffusion causes wave propagation of the surface phase transformations and therefore spatial self-organization, as demonstrated by scanning LEED experiments. With Pt(110), on the other hand, the oscillatory region is very narrow. In this case mass transport through the gas phase as caused by the small pressure variations associated with the reaction lead to synchronization between different parts of the surface. Computer simulations with the cellular automaton technique confirm qualitatively the experimental findings and support the conclusions reached.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2360-2362 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The noise in the tunneling current of a scanning tunneling microscope (STM) has been investigated. At gap voltages above a few mV the current noise shows a 1/f spectral distribution over a range of 1 Hz to 100 kHz. However, at zero bias white noise scaling like thermal noise for the equivalent gap resistance is found. Due to its exponential distance dependence, this noise at zero bias can be used to adjust the tip-to-sample distance with an accuracy similar to the conventional STM method. The performance of a scanning microscope based on this principle is demonstrated.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2225-2226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic spectra of light emission from CH molecules and hydrogen atoms sputtered from hydrogen-implanted graphite are observed. The relative intensities from both species vary with the implanted fluence. The CH yield remains constant while the Hα yield increases. This is consistent with two binding states of implanted hydrogen in graphite.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1893-1897 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 10-keV deuterium implanted in nickel were obtained during implantation through elastic recoil detection between 233 and 313 K. The profiles were allowed to reach saturation at each measured temperature. At the lowest temperature, measurements with various implantation fluxes were performed. Aside from surface peaks, the depth profiles show a uniform density of deuterium in the implanted layer and the shape of these profiles is independent of the sample temperature or implantation fluence or flux. The temperature and fluence dependence could be successfully reproduced with a trapping-detrapping model considering three different trap binding energies. Two of the model parameters are in good agreement with previous calculations performed to reproduce reemission measurements.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3400-3406 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high-temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He+ Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1019 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-oriented C substrates. Using the Monte Carlo code trim, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With the depth distributions of defect production generated by trim as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modeled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4860-4866 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new theoretical framework has been developed which is applicable to the implantation and ion-induced release of hydrogen isotopes in graphite. It provides a physical basis and a refinement of the predictions of the simple model of local saturation and mixing. The model treats the trapping at defects and a local release of trapped atoms by nuclear knock-on. Ion deposition and damage functions are taken from trim simulations. The detrapped atoms may become retrapped or recombine to molecules, which then are transported to the surface by fast molecular diffusion, and subsequently released. By the choice of suitable rate constants in the model calculations, different experimental findings for the implantation and high-fluence self-reemission of deuterons in graphite may be explained consistently. Examples cover the saturation as a function of temperature and energy, depth profiles, gas reemission, thermal desorption, and effects of predamage.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2016-2023 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si1−xGex:H films and p-i-n diodes were fabricated by decomposition of SiH4/GeH4 mixtures in a triode glow-discharge reactor. The photoconductivity under AM1 illumination in these alloys was constant over a range of band gaps between 1.8 (x=0) and 1.5 eV (x=0.25), while the solar cell conversion efficiency decreased at the same time from 8.6% to 4.3%. This can be explained by a reduction in the μτ product for holes with rising x in undoped samples as revealed by time-of-flight experiments. In contrast to μτ, the hole drift mobility μD,h remains constant. The opposite behavior is observed for electrons, whose drift mobility μD,e decreases as the mobility activation energy EA increases. The relation between EA and μD,e for variable x is suggestive of the Meyer–Neldel rule for the conductivity. In conjunction with space-charge-limited current and sub-band-gap absorption data we conclude that only the conduction-band tail is widened by the incorporation of Ge while the valence-band tail remains unaffected. The transport data for x〉0 can no longer be explained by a purely exponential conduction-band tail. The rising density of midgap states shows an increasing capture cross section for holes and a decreasing one for electrons.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3833-3837 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft carbonized layers prepared in a glow discharge, with a hydrogen concentration of H:C∼4/3, are exposed to helium ion bombardment at energies between 0.3 and 2.6 MeV. A strong ion-induced depletion of up to 3×103 H atoms per incident 4He+ ion is observed by means of high-energy ion beam analysis. The hydrogen release is shown to be a local process, with the electronic energy deposition as the main responsible mechanism. The results are successfully compared to a model which takes into account local bond breaking and retrapping and the local formation of hydrogen molecules.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4133-4135 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mo and Pt emitters and a Ni collector with 400 laser-bored holes were used in an "open'' thermionic converter. The alkali vapor was introduced into the converter through the array of holes in the collector from an adjacent alkali metal reservoir with separately controlled temperature. The overall results from the open thermionic converter are comparable to results from enclosed converters. The results found with a Cs plasma are encouraging, with barrier indices down to below 1.8 eV, at emitter temperatures around 1500 K in the case of a Mo emitter. The output power density was around 3.5 W cm−2. In the case of a Pt emitter, both Cs and K plasmas were used, with power densities up to 5.7 and 1.8 W cm−2, respectively close to 1800 K. The structure of the laser-bored collector may have contributed to these results, as well as the efficient removal of impurities in the "open'' converter.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2993-2995 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Guided-wave interferometric modulators at λ=2.6 μm, in Ti:LiNbO3, have been demonstrated. The design, fabrication, and performance of these modulators are presented. Extinction ratios as high as ∼30 dB with Vπ∼14 V for the extraordinary mode have been observed. No out-diffused modes were detected, likely as a result of the required diffusion conditions of high temperature and a long time.The devices are for use with state-of-the-art fluoride-glass fibers, whose transmission loss spectra currently reveal a minimum value near 2.55–2.6 μm.
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