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  • 1990-1994  (64)
  • 1
    Electronic Resource
    Electronic Resource
    Interband transitions in InAsxP1−x/InP strained multiple quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1645-1647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical study of the interband transitions in InAsxP1−x/InP strained-layer multiple quantum wells grown by gas-source molecular beam epitaxy. Low-temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy-hole and the light-hole bands, a transition involved with the spin-orbit split-off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer-thickness fluctuations from the sample using short-period superlattices as the well materials. Calculations based on the envelope-function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain-induced valence-band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351683
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  • 2
    Electronic Resource
    Electronic Resource
    A study of group-V desorption from GaAs and GaP by reflection high-energy electron diffraction in gas-source molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2806-2809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Desorption behaviors of arsenic on GaAs and phosphorus on GaP surfaces have been studied by the specular-beam intensity change of reflection high-energy electron diffraction when the group-V cracker shutter is closed in gas-source molecular beam epitaxy. We obtained an activation energy of 58 kcal/mol for arsenic desorption from GaAs. Compared with arsenic on GaAs, phosphorus on GaP has a large desorption rate constant, and the activation energy of phosphorus desorption is 43 kcal/mol. These activation energies are comparable to the heats of vaporation of As2 and P2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351532
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  • 3
    Electronic Resource
    Electronic Resource
    Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2128-2130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profiles of AlGaAs/GaAs heterostructures grown by gas-source molecular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formation of high index planes. With a proper combination of low growth temperature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GSMBE growth profile at lower substrate temperature with reasonable accuracy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354739
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  • 4
    Electronic Resource
    Electronic Resource
    A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 255-259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A kinetic model has been developed to explain As and P incorporation behaviors in GaAs1−xPx epilayers grown on GaAs (001) by gas-source molecular beam epitaxy. The model can predict the P compositions for various substrate temperatures and flow rates. The model shows that an in situ determination of GaP molar fraction in GaAs1−xPx can be performed by group V-induced intensity oscillations of reflection high-energy-electron diffraction at low substrate temperatures where desorption of group V species is negligible. At high substrate temperatures the compositions can be determined from the arsine and phosphine flow rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354155
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  • 5
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron-diffraction study of metalorganic molecular-beam epitaxy of GaAs using trimethylgallium and arsenic (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4393-4395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth behavior of metalorganic molecular-beam epitaxial (MOMBE) growth of GaAs using trimethylgallium and solid arsenic is studied by the intensity oscillation behavior of reflection high-energy electron-diffraction (RHEED). The growth process is more complicated than conventional MBE using elemental sources. In MOMBE the growth rate depends not only on the substrate temperature but also on the arsenic pressure. In addition, the RHEED behavior indicates a possibility of atomic layer epitaxy using trimethylgallium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344914
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  • 6
    Electronic Resource
    Electronic Resource
    Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4673-4679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111)B and (100) substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under optimized growth conditions on InP (111)B substrates miscut 1° to the 〈110〉 direction. Photoluminescence, absorption and photoluminescence excitation spectra were taken for InAsP/InP strained MQWs at low temperature. Distinct optical transitions were resolved. Energy-level calculations were carried out for both (111)B and (100) MQWs by taking into account the differences in elastic deformation, strain-induced band-edge shift, valence-band anisotropy, and the piezoelectric effect. The peaks were successfully assigned as different interband excitonic transitions. The best fit of the energy-level calculation to the experimental spectra suggests that the valence-band offset ratios (Qv=ΔEv/ΔEg) for (111)B and (100) InAsP/InP heterostructures are 0.35 and 0.30, respectively. This dependence on the substrate orientation was accounted for in terms of the strain-induced band-edge shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355920
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  • 7
    Electronic Resource
    Electronic Resource
    Origin of n-type conductivity of low-temperature grown InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357052
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  • 8
    Electronic Resource
    Electronic Resource
    High-resolution x-ray diffraction of InAlAs/InP superlattices grown by gas source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1530-1532 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of InAlAs/InP superlattices grown by gas source molecular beam epitaxy on (001)InP were investigated extensively with high-resolution x-ray diffraction. Very high quality material was obtained as indicated by narrow peak widths, numerous satellite peaks, and distinct Pendellosung fringes. Intermixing of group-V elements at each interface was quantified by dynamical simulations of (004), (002), and (115) reflections. The accuracy of the fits to both peak positions and peak intensities for all three reflections provides strong evidence for the proposed four-layer periodic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105168
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  • 9
    Electronic Resource
    Electronic Resource
    Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2954-2956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxP1−x/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104733
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  • 10
    Electronic Resource
    Electronic Resource
    Surface kinetics of chemical beam epitaxy of GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 689-691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new kinetic model for chemical beam epitaxy of GaAs using triethylgallium and arsine is proposed. Both group III and group V species are equally important in the surface reactions. This model can fit experimental data very well. Various aspects of the growth rate as a function of substrate temperature, triethylgallium and arsine flow rates are examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103593
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