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  • 1
    Electronic Resource
    Electronic Resource
    Water structure in concentrated lithium chloride solutions (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 8460-8469 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The radial pair distribution functions gHH(r) and gOH(r) (to a good approximation) of 1 and 10 m solutions of lithium chloride in water have been obtained from neutron diffraction. It turns out that the intermolecular water structure in a solution of 10 m is affected considerably by the presence of ions—the number of hydrogen bonds is about 70% lower than in pure water. The intermolecular water structure in 1 m lithium chloride as well as the intramolecular water structure in both 1 and 10 m lithium chloride is not distinguishable from that of pure water in any measurable extent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462298
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  • 2
    Electronic Resource
    Electronic Resource
    Elastic recoil detection for medium-energy ion scattering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3147-3152 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Medium-energy ion scattering (MEIS) has been successfully applied for many years as a technique for structural analysis of solids. Advantages over competing techniques include superb depth resolution (5–10 A(ring)), quantitative information (well-known cross sections), and ease of interpretation. A weakness of the technique is the lack of sensitivity to light elements. We have adapted the technique to detect light elements by elastic recoil detection analysis (ERDA). This has been used to analyze samples containing hydrogen and boron, with depth resolution of ≈10 A(ring), comparable to conventional MEIS. This is an order of magnitude improvement over conventional ERDA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144322
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  • 3
    Electronic Resource
    Electronic Resource
    Are bare surfaces detrimental in epitaxial growth? (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2648-2650 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For growth of epitaxial silicon-germanium structures by hydride chemical vapor deposition (CVD), the growth front is hydrogen-stabilized. Using medium energy ion scattering to examine the abruptness of an embedded Ge film in a Si(001) host, intermixing can be directly assessed. We have explored CVD films grown with varying hydrogen coverages, and find that adsorbed hydrogen serves a beneficial role in maintaining the abruptness of the interface. Embedded layers grown by molecular beam epitaxy are also more abrupt when the surface is stabilized, in this case by an adsorbed passivant such as Sb or As. Growth in the presence of a surface active agent (surfactant) results in greater control of constituents with no loss of epitaxial quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104796
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  • 4
    Electronic Resource
    Electronic Resource
    A new two-dimensional particle detector for a toroidal electrostatic analyzer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2679-2683 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new two-dimensional detector for the detection of ions scattered from a solid target, analyzed in energy and scattering angle by a toroidal electrostatic analyzer. The detector resolves the scattering angle with a resolution of 0.4° over a range of 25°, and the ion energy with a resolution of 120 eV over a range of 2000 eV, at 100 keV ion energy. The energy resolution of the spectrometer was improved with a factor 4 relative to its previous performance with a one-dimensional scattering angle detector, while−at the same time−the dose efficiency (count/μC) was improved by a factor 5–10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142199
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  • 5
    Electronic Resource
    Electronic Resource
    Surfactant coverage and epitaxy of Ge on Ga-terminated Si(111) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2962-2964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the role of surfactant coverage and bonding for growth of Ge on Si(111). At 470 °C Ge grows on Si(111)-(7×7) in a Stranski–Krastanov fashion. Preadsorption of 1-ML Ga at 500 °C forms a Ga:Si(111)-(6.3×6.3) structure and alters the Ge growth mode from three-dimensional (3D) islanding to continuous film formation. However, the epitaxial layer contains defects, caused by the presence of domain boundaries of both A- and B-type material. Growth properties depend strongly on the initial Ga coverage: if a ((square root of)3×(square root of)3) surface with 1/3-mL Ga is used, a modified Stranski–Krastanov growth mode is observed, with 3D islands of a uniform predominant thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109157
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  • 6
    Electronic Resource
    Electronic Resource
    Relaxation and H coverage of ammonium fluoride treated Si(111) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2344-2346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using medium energy ion scattering and elastic recoil detection, we have studied silicon surfaces prepared by ex situ NH4F wet etching. We report direct measurements of relaxation and hydrogen coverage of the passivated Si(111)-(1×1) surface. For Si(111), nearly ideal, unreconstructed surfaces are obtained, terminated by a single atomic layer of hydrogen. Silicon backscatter yields agree closely with simulations of a bulk truncation, with an inward relaxation of the outermost layer of 0.075±0.03 A(ring). On the other hand, Si(001) prepared by NH4F solution shows severe roughening. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112740
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  • 7
    Electronic Resource
    Electronic Resource
    Nucleation of Co silicide on H passivated Si(111) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3102-3104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of H passivation on the deposition of Co on Si(111). The H terminated surface has fewer nucleation sites for silicide formation than either the bare (7×7) surface or the boron ((square root of)3×(square root of)3)R30°. This leads to a growth mode dominated by the formation of sparse nonepitaxial islands, which grow laterally to merge. The H passivated (1×1) surface does not contain Si adatoms, unlike the (7×7) and boron ((square root of)3×(square root of)3)R30° surfaces, which must be the nucleation site for cobalt silicide formation on Si(111). © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112957
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  • 8
    Electronic Resource
    Electronic Resource
    Growth modes of Ge on GaAs(001) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1680-1682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used low-energy electron microscopy to investigate the growth of Ge on GaAs(001)-c(2×8). Depending on the growth temperature we find a wide variety of growth modes: At 420 °C growth proceeds layer by layer, with nucleation of two-dimensional (2D) islands smaller than 150 A(ring) across. An increase of growth temperature to 450–480 °C enhances surface diffusion and results in formation of large anisotropic 2D islands on wide terraces along with denuded zones—and step flow—along the step edges. Further temperature increase transforms the growth mode to step flow. At 540 °C the growth mode becomes unstable, resulting in a roughening of the Ge surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112884
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  • 9
    Electronic Resource
    Electronic Resource
    Neutron diffraction studies of H2O/D2O at supercritical temperatures. A direct determination of gHH(r), gOH(r), and gOO(r) (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 6210-6215 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Neutron diffraction studies are reported on H2O at temperatures of 300 and 400 °C. The method of isotopic substitution is applied to three mixtures of H2O and D2O, and the diffraction data are used to determine the three radial distribution functions gHH(r), gOH(r), and gOO(r). These results can be used to discuss changes in nearest neighbor structure between water molecules, and to assess the degree of usefulness of representative (usually pairwise) model potentials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468403
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  • 10
    Electronic Resource
    Electronic Resource
    Hydration of Chloride Ions in a Polyelectrolyte Solution Studied with Neutron Diffraction (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 4454-4458 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100067a036
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