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  • 1
    Electronic Resource
    Electronic Resource
    Bonding properties of glow-discharge polycrystalline and amorphous Si-C films studied by x-ray diffraction and x-ray photoelectron spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5395-5400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline and amorphous Si-C films were prepared by rf glow-discharge decomposition of silane-methane mixtures at 700 °C. We have demonstrated that polycrystalline SiC films with large grains grow under heavy hydrogen dilution. The bonding properties as a function of film composition and hydrogen dilution were characterized by means of x-ray diffraction and x-ray photoelectron spectroscopy. Crystallization takes place at around C content x=0.5 in Si1−xCx, accompanying some segregation of carbon atoms in grain boundaries, as a result of a preference for heteronuclear bonds. It was shown that C-C(C3−nSin) (n=0–3) bonds appear in the carbidic phase of C-rich films, leading to occurrence of compressive strain in the crystalline SiC grains. In addition, effects of hydrogen dilution were discussed in correlation with the strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350561
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  • 2
    Electronic Resource
    Electronic Resource
    Relationship between the stress and bonding properties of amorphous SiNx:H films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5676-5681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H (a-SiNx:H) films were deposited at 300 °C on single-crystal Si and fused quartz substrates using SiH4-NH3 mixtures. The stress and vibrational absorption were investigated as a function of the N content x. Increased tensile stress subsequent to a reduction in the compressive stress with increasing x was observed. From the values of stress determined for films on two different substrates, values of Y/(1−ν) for a-SiNx:H films were estimated, where Y is Young's modulus and ν the Poisson ratio. The values of Y/(1−ν) rapidly decreased with an increase in x, from 4.2×1012 dyn/cm2 for a-Si:H films to about 2.5×1011 dyn/cm2 for a-SiNx:H films having x above 1.0. It was found that the measured tensile stress in a-SiNx:H films for high x above 1.0 was caused by the intrinsic stress, and that incorporated NH bonds act to relax the intrinsic stress. These results were discussed in terms of the change in the bonding configuration as a function of x, based on a modified random bonding model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351917
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  • 3
    Electronic Resource
    Electronic Resource
    Relationship between electrical properties and structure in uniaxially oriented polycrystalline silicon films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1462-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped polycrystalline Si (poly-Si) films were prepared on a fused quartz substrate as a function of the rf power (0–30 W) and deposition temperature (620–770 °C) by a plasma-enhanced chemical vapor deposition method. The preferential orientation to a random, 〈100〉 or 〈110〉 crystal axis can be selected by changing some of these preparation conditions. Electron spin resonance (ESR) and the dependence of the dark conductivity σd on the measurement temperature T have been investigated to examine how the structure of the grain boundary depends on the preferential orientation (P.O.) and affects the electrical properties. An enhancement in the degree of P.O. is found to lead to a reduction in the local ESR spin density within the boundary region and g factor. Also, for the films with a random or weak P.O., σd as a function of 1/T exhibits a kink around room temperature, and the conduction in a low-T range is interpreted in terms of the model of variable range hopping within the boundary region. These results and the characteristics of thin-film transistors fabricated on the poly-Si films are discussed in terms of the structural change of the boundary region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351239
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  • 4
    Electronic Resource
    Electronic Resource
    Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1374-1377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doped polycrystalline SiC films were deposited from a SiH4-CH4-H2-(PH3 or N2) mixture by plasma-enhanced chemical vapor deposition at 700 °C. The best crystallinity was obtained at x∼0.53 in Si1−xCx for both undoped and doped films. The crystallinity was enhanced by both P and N doping, but deteriorated again under high doping conditions. Also, better crystallinity was obtained by doping with P rather than N. Intrinsic tensile and compressive stresses were observed for P- and N-doped films, respectively. The resistivity and dangling-bond density decreased in correspondence to the enhancement in crystallinity. Origins of the dangling bonds and of a change in the crystallinity were discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351748
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  • 5
    Electronic Resource
    Electronic Resource
    Crystal structure of Si1−xCx films by plasma-enhanced chemical vapor deposition at 700 °C (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7945-7947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray diffraction and electron-spin-resonance measurements, the crystal structure and bonding configurations of Si1−xCx films by plasma-enhanced chemical vapor deposition at 700 °C are shown to change abruptly at around x=0.5. At around this composition, a polycrystalline film with a cubic SiC 〈111〉 preferred orientation and an average grain size of 95 nm is grown on a fused silica substrate under high hydrogen dilution. The structural change can be attributed to an increase in the probability of occurrence of a Si- C4 tetrahedron in a chemically ordered network.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347490
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of active hydrogen on the stress relaxation of amorphous SiNx:H films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1493-1500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H (a-SiNx:H) films were deposited at 300 °C by plasma-enhanced chemical vapor deposition using SiH4–NH3–H2 mixtures. The stress, vibrational absorption, buffered HF (BHF) etch rate, and breakdown strength were investigated as a function of the gas volume ratio [H2]/[SiH4](=RH) and rf power. The [NH3]/[SiH4] ratio was maintained at 10, in which nitride films having a near-stoichiometric composition can be obtained. The measured stress for these films was intrinsic stress. It was suggested that the stress is relaxed by forming Si—NH—Si bonds instead of N—Si3 bonds. An increase in both RH and rf power values was found to decrease the stress and BHF etch rate and increase the breakdown strength. A change in the bonding structure with increasing RH and rf power is examined in terms of a thermodynamic equilibrium reaction, and it was suggested that increased H* radicals and/or H+ ions play an active role in relaxing the stress through the structural change.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356384
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  • 7
    Electronic Resource
    Electronic Resource
    Bonding configuration and defects in amorphous SiNx:H films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 741-743 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H films were prepared by rf glow discharge of SiH4-NH3 mixtures at 300 °C, and the optical properties and the density Ns of Si dangling bonds obtained from electron spin resonance were investigated as a function of the N content x. The slope E0 in the Urbach form of the absorption coefficient and Ns, respectively, have a maximum at x=1.2 and 0.7. The dependence of E0 on x was examined on the basis of the random-bonding model including H atoms, and the dependence of Ns was connected with the optical gap and E0, according to the weak-bond dangling-bond conversion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104533
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  • 8
    Electronic Resource
    Electronic Resource
    Analysis of SiH vibrational absorption in amorphous SiOx:H (0≤x≤2.0) alloys in terms of a charge-transfer model (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiOx:H films were deposited at 300 °C by rf glow discharge of SiH4-O2 mixtures, and the SiH stretching vibrational absorption was investigated as a function of the oxygen content x. The absorption profiles were examined on the basis of the random-bonding model (RBM). The length dSiH of SiH bonds in four H-Si (Si3−nOn) bonding units was examined in terms of a charge-transfer model, using the Sanderson's electronegativity. Using these dSiH values, the peak wave numbers for the four components were found to be 2000, 2108, 2195, and 2260 cm−1, in agreement with the experimental ones determined on the basis of the RBM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110386
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  • 9
    Electronic Resource
    Electronic Resource
    Structure of recrystallized silicon films prepared from amorphous silicon deposited using disilane (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1218-1220 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of polycrystalline Si (poly-Si) films, prepared by annealing of amorphous Si films deposited using Si2H6 and SiH4, has been investigated as a function of deposition temperature Td (450–580 °C) and annealing temperature Ta (550–1000 °C). A dominant texture of the poly-Si films changed from 〈100〉 for Td below 500 °C to 〈111〉 texture for Td above 500 °C, independent of Ta. For Ta lower than 650 °C, a greater grain size was obtained by the use of Si2H6 rather than SiH4. It was suggested that the changes of these texture and grain size, respectively, are mainly controlled by Td and the deposition rate of the amorphous Si films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108739
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation of uniform spherical aluminum hydrous oxide particles from acetylacetonato-aluminum solutions (1991)
    Springer
    Colloid & polymer science 269 (1991), S. 290-294 
    Details
    ISSN: 1435-1536
    Keywords: Aluminum hydrous oxide ; uniform particles ; forced hydrolysis ; aluminum complex ; acetylacetone
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Uniform spherical particles of amorphous aluminum hydrous oxide (0.45 μm in diameter with a relative standard deviation of 0.09) were produced under a limited set of conditions in an aluminum sulfate/acetylacetone system at 100°C aged for 24 h. Grain-like crystalline α-AlOOH particles (2.6 μm in length with a relative standard deviation of 0.10) were also prepared in the absence of sulfate ions at 100°C for 42 h. Their morphology and size were sensitive to the total aluminum concentration, even though the initial pH was kept the same. The temperature dependence of the absorption spectra of acetylacetonato-aluminum complexes indicated their exothermic formation. These complexes release free aluminum ions at elevated temperatures, which subsequently hydrolyzed. The resulting polymerized hydroxo-aluminum species complexes with the sulfate ion act as precursors to particle formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665503
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