ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6299-6303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler–Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346872
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Nucleation and growth in the initial stage of metastable titanium disilicide formation'' [J. Appl. Phys. 74, 2954 (1993)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7627-7627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355348
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Nucleation and growth in the initial stage of metastable titanium disilicide formation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2954-2956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Initial stage of the C49–TiSi2 formation was investigated at 530 °C and at a rate of 10 °C/m using transmission electron microscopy. Morphological studies reveal that the C49 phase first separately nucleates at the interface between amorphous silicide and crystalline silicon, then followed by simultaneous lateral and vertical growth. The growth proceeds very fast until the formation of a continuous layer of C49–TiSi2. Local chemical analysis shows that the composition range of the amorphous silicide is narrowed due to the C49 formation. For isothermal annealing, a linear density of the C49 nuclei is about 6.7×10−3/A(ring), and remains the same upon prolonged annealing. In the case of annealing at 10 °C/m, the linear density depends on temperature, reaching a maximum of 7.2×10−3/A(ring) at around 575 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354602
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    A study of the S(3P2,1,0;1D2) production in the 193 nm photodissociation of CH3S(X˜) (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 6283-6290 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dynamics of S(3P2,1,0;1D2) production from the 193 nm photodissociation of CH3SCH3 has been studied using 2+1 resonance-enhanced multiphoton ionization techniques. The 193 nm photodissociation cross section for the formation of S from CH3S initially prepared in the photodissociation of CH3SCH3 is estimated to be 1×10−18 cm2. The branching ratio for S(3P)/S(1D) is found to be 0.15/0.85. The fine-structure distribution observed for product S(3P2,1,0) is nearly statistical. Possible potential energy surfaces involved in the 193 nm photodissociation of CH3S(X˜) have been examined theoretically along the CH3–S dissociation coordinate in C3v symmetry. These calculations suggest that predissociation of CH3S(C˜ 2A2) via the repulsive CH3S(E˜ 2E) surface is most likely responsible for the efficient production of S(1D). For vibrationally excited CH3S(X˜), a viable mechanism for the dominant production of S(1D) may involve direct dissociation via the CH3S(E˜ 2E) state formed in the 193 nm photoexcitation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463690
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Adiabatic ionization energy of CH3SSCH3 (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 8440-8444 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ionization energy (IE) for CH3SSCH3 has been measured by the pulsed molecular beam photoionization mass spectrometric method. The experimental IE of 8.18±0.03 eV is in excellent agreement with the theoretical prediction of 8.15 eV calculated using the ab initio Gaussian-2 procedure, indicating that the experimental ionization onset can be assigned as the adiabatic IE for CH3SSCH3. The observation of the adiabatic IE(CH3SSCH3) is attributed to the low potential energy barrier for rotation about the S–S bond, which allows CH3SSCH3 to exist dynamically in a wide range of CSSC dihedral angles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465619
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Adiabatic ionization energy and electron affinity of CH2Br (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 6470-6473 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoionization efficiency spectrum of supersonically cooled CH2Br has been measured near its ionization threshold. The adiabatic ionization energy (IE) of CH2Br is determined to be 8.61±0.01 eV, in excellent agreement with the value obtained previously using the He i photoelectron spectroscopic method. We have also performed Gaussian-2 (G2) calculations on CH2Br+, CH2Br, and CH2Br− which yield values of 8.47 and 0.97 eV for the IE and electron affinity of CH2Br, respectively. The G2 electron affinity is in accord with the literature value of 1.0±0.3 eV calculated from the acidity of CH3Br.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465864
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Defect ordering in epitaxial α-GaN(0001) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8195-8197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357873
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Solid-state reaction-mediated low-temperature bonding of GaAs and InP wafers to Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 772-774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a low-temperature wafer bonding method for the realization of integration of GaAs- and InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280–300 °C by taking advantage of the low-temperature solid-state reactions occurring at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. Both the simple mechanical test and standard thermal cycling test prove excellent structural integrity of the joined wafers. Structural analyses reveal only limited interfacial reactions as well as solid-phase epitaxial regrowth of GeSi alloys on the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111008
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si (strained)/Si0.7Ge0.3 (relaxed) modulation-doped structures incorporating unusually thin (700 nm) buffer layers were grown with molecular beam epitaxy at 700 °C. By utilizing (100) substrates misoriented toward (011) by 4°, the density of threading dislocations was reduced by over an order of magnitude as compared with conventional techniques. These layers produced exceptionally high Hall mobilities of 1790 cm2/V s at 300 K and 19 000 cm2/V s at 77 K on n-type modulation-doped heterostructures. The effect of substrate misorientation on threading dislocation density was investigated using transmission electron microscopy and Nomarski microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110603
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature solid-phase heteroepitaxial growth of Ge-rich SixGe1−x alloys on Si (100) by thermal annealing a-Ge/Au bilayers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 225-227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial layers of SixGe1−x alloys were grown on Si(100) by thermal annealing bilayers of a-Ge/Au deposited on single-crystal Si (sc-Si) substrates at 300 °C. During annealing, Ge dissolves into the Au layer and then grows epitaxially to the substrate, with the final structure changing from a-Ge/Au/sc-Si to Au/SixGe1−x/sc-Si. The SixGe1−x layer was found to be Ge rich (x≈0.15) from AES and STEM analysis and to be epitaxial to the Si(100) substrate from the x-ray rocking curve and RBS channeling measurements. Stacking faults and microtwins are the major defects in the epitaxial film, as observed by cross-sectional TEM. High-resolution TEM analysis of the SixGe1−x/Si interface shows that the growth initiates at specific areas of the original Au/Si interface. This work demonstrates for the first time both heteroepitaxial growth and the growth of SixGe1−x alloys on Si(100) using solid phase epitaxy with an eutectic-forming metal as the transport medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108191
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...