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  • 1
    Electronic Resource
    Electronic Resource
    In situ YBa2Cu3O7−x superconductor films on GaAs/AlAs superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5108-5110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x films have been deposited in situ onto III-V superlattice substrates. The substrates were GaAs/AlAs superlattices grown by molecular beam epitaxy onto GaAs substrates. For 5000-A(ring) -thick YBCO films grown at 615 °C substrate temperature, we have obtained Tc of 73 K. For thinner films the Tc's are lower, indicating poor interfaces. However, the onset of the superconducting transition is 90 K in all cases. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM) show these films to be polycrystalline. TEM shows an interaction layer of about 1000 A(ring) at the interface. Low-temperature cathodoluminescence measurements of the substrate show that atomic interdiffusion has intruded at least 5000 A(ring) below the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349020
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  • 2
    Electronic Resource
    Electronic Resource
    Structural quality and the growth mode in epitaxial ZnSe/GaAs(100) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2294-2300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of the initial growth mode on the structural quality and dislocation configuration in epitaxial ZnSe/GaAs(100). We find that a three-dimensional initial growth mode strongly degrades the crystal quality and results in a high density of threading dislocations and short misfit dislocation segments. On the other hand a two-dimensional growth mode, achieved by a Zn exposure treatment of GaAs surfaces, results in few threading dislocations and long misfit dislocations. These differences are explained by postulation of new dislocation generation sites created by island coalescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354079
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of praseodymium-doped InGaP epilayer grown by liquid phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1312-1315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Praseodymium (Pr) is added to the InGaP growth melt during liquid phase epitaxy (LPE). The epilayers are grown, by using a supercooling method, on (100) Cr-doped semi-insulating GaAs substrates at a growth temperature of 790 °C. An examination of the structural properties of the InGaP-grown layers reveals that its lattice constant increases slightly with increasing Pr concentration in the growth melts. Similarly, an examination of the electrical properties reveals that, depending on the amount of Pr in the growth melt, n-type InGaP epilayers with room-temperature electron concentrations in the range of 3.4×1016 cm−3 to 5.2×1015 cm−3 and electron mobilities from 730 to 1310 cm2/V s can be prepared. The photoluminescence spectral results show that by increasing the amount of Pr in the growth melt, smaller full-width at half-maximum values and better band-edge emission intensities result. The experimental results support the fact that Pr exhibits a gettering effect in the InGaP LPE process, as no characteristic Pr intra-4f-shell transitions are observed in the luminescence spectra of the InGaP-grown layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351738
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  • 4
    Electronic Resource
    Electronic Resource
    New III-V diluted magnetic semiconductors (invited) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6103-6108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new class of diluted magnetic semiconductor (DMS) based on a III-V semiconductor is reviewed. The new DMS, (In,Mn)As, was made possible by low temperature molecular beam epitaxial growth. Magnetic measurements and x-ray diffraction showed homogeneous incorporation of Mn in the films under certain growth conditions, and inclusion of a MnAs-like phase if the conditions are not optimized. The films can be made either p- or n-type by choosing the growth conditions and/or doping. Homogeneous n-type (In,Mn)As layers were paramagnetic and showed negative magnetoresistance. On the other hand, remanent magnetization was observed in p-type samples at low temperature and an anomalous Hall effect associated with it. The presence of such effects was most readily explained in terms of formation of bound magnetic polarons. A first result of anomalous Hall effect in a heterojunction is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347780
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  • 5
    Electronic Resource
    Electronic Resource
    A self-consistent solution of Schrödinger–Poisson equations using a nonuniform mesh (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4071-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent, one-dimensional solution of the Schrödinger and Poisson equations is obtained using the finite-difference method with a nonuniform mesh size. The use of the proper matrix transformation allows preservation of the symmetry of the discretized Schrödinger equation, even with the use of a nonuniform mesh size, therefore reducing the computation time. This method is very efficient in finding eigenstates extending over relatively large spatial areas without loss of accuracy. For confirmation of the accuracy of this method, a comparison is made with the exactly calculated eigenstates of GaAs/AlGaAs rectangular wells. An example of the solution of the conduction band and the electron density distribution of a single-heterostructure GaAs/AlGaAs is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346245
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  • 6
    Electronic Resource
    Electronic Resource
    Synthesis and Characterization of (o-Phenylenebis(dimethylarsine))rhenium(III) and -(V) Complexes with Thiolato Ligands (1994)
    s.l. : American Chemical Society
    Inorganic chemistry 33 (1994), S. 1614-1621 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00086a010
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of miniband formation in the CdTe/Cd1−xMnxTe quantum well system (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1769-1771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effects of perpendicular electric fields on the eigenenergies of the CdTe/Cd1−xMnxTe quantum well system. The samples are probed at 6 K using photoluminescence. In an electric field, the photoluminescence spectra of wide-barrier quantum well samples red shifted, consistent with the quantum-confined Stark effect. The spectra of narrow-barrier superlattice samples blue shifted, indicative of miniband reduction to localized states. A linear blue shift was observed up to a field of 50 kV/cm after which saturation occurred. Additionally, we have observed luminescence which appeared to arise from transitions between adjacent wells. No striking effects were observed at the paramagnetic-spin glass transition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104062
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature-dependent mobility of a GaAs/AlGaAs heterostructure after deposition of MgO and superconducting YBa2Cu3O7−x (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 601-603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality YBa2Cu3O7−x films have been grown on MgO epitaxial buffer layers deposited onto a GaAs/AlGaAs heterostructure incorporating a two-dimensional electron gas (2DEG). The critical temperature of the YBa2Cu3O7−x, Tc(0) was (approximately-greater-than)80 K, and Jc(approximately-greater-than)2×104 A/cm2 at 77 K. Electron mobilities and concentrations of 2DEG substrates were measured at different stages in the formation of YBa2Cu3O7−x/MgO/2DEG structure. Room-temperature mobilities and concentrations were unchanged after YBa2Cu3O7−x/MgO deposition, while low-temperature mobilities were slightly degraded. It is found that the degradation of electron mobility is correlated to the high growth temperature of YBa2Cu3O7−x. Since the 2DEG is only 1200 A(ring) from the substrate surface, this constitutes a sensitive demonstration of the viability of the semiconductor substrate under these growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107849
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  • 9
    Electronic Resource
    Electronic Resource
    Metalorganic deposition of high critical current thin films in the Bi-Sr-Ca-Cu-O system on {100} LaAlO3 substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 351-353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of the two Cu-layer phase in the Pb-doped Bi-Sr-Ca-Cu-O system have been fabricated on {100} LaAlO3 single crystals by the metalorganic deposition from ethyl hexanoate precursors. Thin films given heat treatments in air at 850–860 °C had resistive transitions with a Tc of 86–89 K. The zero-field transport critical current densities were in the range of 2–4×105 A/cm−2 at 77 K and 106 A cm−2 at 45 K in 200–300-nm-thick films. In contrast to c-axis oriented films grown on {100} MgO, x-ray pole figures show that the films grown on {100} LaAlO3 are epitaxial, a result confirmed by electron channeling patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107934
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  • 10
    Electronic Resource
    Electronic Resource
    Growth mode and dislocation distribution in the ZnSe/GaAs (100) system (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3220-3222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of the initial growth mode on the dislocation structure in ZnSe epilayers grown on GaAs(100) by molecular beam epitaxy. For the case where the initial growth occurred by the formation and coalescence of three-dimensional islands, the threading dislocation density was found to be an order of magnitude higher and misfit dislocation lengths much shorter than that for the case where the initial growth proceeded by a two-dimensional layer-by-layer mode. These differences are discussed in terms of dislocation formation at island coalescence boundaries for a three-dimensional growth mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107465
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