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  • 1990-1994  (301)
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  • 1
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    SKS splitting measurements and mantle deformation in California (1994)
    In:  Seismological Res. Lett., L'wiw, Inst. f. Theoret. Geodäsie, vol. 65 (1), no. 4, pp. 20, pp. B01408, (ISSN: 1340-4202)
    Details
    Publication Date: 1994
    Keywords: AnisotropyS ; Seismology ; Conference abstr. ; SRL
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    BIBLIOGRAPHY SEISMOLOGY
  • 2
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    Elements of the yeast pheromone response pathway required for filamentous growth of diploids (1993)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1993-12-10
    Description: Transmission of an external signal from receptors to downstream targets is often mediated by a conserved set of protein kinases that act in sequence (a kinase cascade). In haploid strains of Saccharomyces cerevisiae, a signal initiated by peptide pheromones is transmitted through this kinase cascade to a transcription factor STE12, which is required for the expression of many mating-specific genes. Here it was shown that in diploids some of the same kinases and STE12 are required for filamentous growth, but the pheromone receptors and guanosine triphosphate-binding protein are not required for filament formation. Thus, a similar kinase cascade is activated by different signals in haploids and diploids and mediates different developmental outcomes in the two cell types.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Liu, H -- Styles, C A -- Fink, G R -- GM 35010/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 1993 Dec 10;262(5140):1741-4.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Whitehead Institute for Biomedical Research, Massachusetts Institute of Technology, Cambridge 02142.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/8259520" target="_blank"〉PubMed〈/a〉
    Keywords: Fungal Proteins/*metabolism ; GTP-Binding Proteins/metabolism ; Genes, Fungal ; Mutation ; Peptides/*metabolism/pharmacology ; Phenotype ; Protein Kinases/*metabolism ; Receptors, Mating Factor ; Receptors, Peptide/metabolism ; Saccharomyces cerevisiae/genetics/*growth & development/metabolism ; *Saccharomyces cerevisiae Proteins ; *Signal Transduction ; Transcription Factors/*metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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    PAPER CURRENT
  • 3
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    Suppression of hyphal formation in Candida albicans by mutation of a STE12 homolog (1994)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1994-12-09
    Description: A Candida albicans gene (CPH1) was cloned that encodes a protein homologous to Saccharomyces cerevisiae Ste12p, a transcription factor that is the target of the pheromone response mitogen-activated protein kinase cascade. CPH1 complements both the mating defect of ste12 haploids and the filamentous growth defect of ste12/ste12 diploids. Candida albicans strains without a functional CPH1 gene (cph1/cph1) show suppressed hyphal formation on solid medium. However, cph1/cph1 strains can still form hyphae in liquid culture and in response to serum. Thus, filamentous growth may be activated in C. albicans by the same signaling kinase cascade that activates Ste12p in S. cerevisiae; however, alternative pathways may exist in C. albicans.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Liu, H -- Kohler, J -- Fink, G R -- GM402661/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 1994 Dec 9;266(5191):1723-6.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Whitehead Institute for Biomedical Research, Cambridge, MA 02142.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7992058" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Sequence ; Base Sequence ; Candida albicans/cytology/genetics/*growth & development ; Cloning, Molecular ; Culture Media ; Fungal Proteins/chemistry/*genetics/physiology ; *Genes, Fungal ; Genetic Complementation Test ; Molecular Sequence Data ; Mutation ; Saccharomyces cerevisiae/cytology/genetics/growth & development ; *Saccharomyces cerevisiae Proteins ; Transcription Factors/chemistry/*genetics/physiology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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    PAPER CURRENT
  • 4
    Electronic Resource
    Electronic Resource
    Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3062-3067 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical results are derived for the intersubband absorption quantum efficiency, which take into account contributions from both bound-to-bound state and bound-to-continuum state transitions. Including the final state lifetime broadening, the absorption spectrum gradually decreases in peak strength and becomes broader from the pure bound-to-bound case to the pure bound-to-continuum situation. The physical reason for the divergence in absorption strength when the upper state is in resonance with the top of the barrier and in the absence of broadening is discussed. The detector current responsivity as a function of well width (and hence upper state position) is estimated. Calculated examples are given, covering the crossover region from the bound-to-bound case to the bound-to-continuum case. Our results compare well with experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352989
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  • 5
    Electronic Resource
    Electronic Resource
    Dark current in quantum well infrared photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2029-2031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modeling the dark current in quantum well infrared photodetectors has been a topic of much recent research, but the implications of many of the underlying assumptions have not been clarified. We attempt to justify one such model and to provide physical insight for its success. We compare the dark current expression with experiments on several samples, and show that the model provides a good approximation for a wide range of device parameters including barrier thicknesses from 250 to 700 A(ring) and number of wells from 4 to 32.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353146
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  • 6
    Electronic Resource
    Electronic Resource
    Elastic and viscoelastic analysis of stress in thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3458-3463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The occurrence of stress in thin films has led to serious considerations of stability problems in the semiconductor industry. It may cause mechanical failure of films, such as adhesion reduction or contact peel-off, or variations in electrical properties. The existence of stress will also alter electromigration behavior for thin metal lines. The elastic stress in a multilayered structure due to thermal processing is calculated by use of the principle of mechanics balance. It is found that the variation of thickness in one film will not affect the magnitude of stress in another film. The shearing and peeling stress at the edge of a patterned structure, which is responsible for the peeling of a film at the edge, is then modeled and discussed in detail. Finally, the relaxation of stress by viscous motion of SiO2 is analyzed based on Maxwell's viscoelastic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351420
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of implant condition on the transient-enhanced diffusion of ion-implanted boron in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2611-2614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under high-dosage boron implant, the implant condition was found to be important for reducing the transient-enhanced diffusion of boron in Si and forming shallow p+n junction with good rectifying characteristics as well as high dopant concentration in the diffused region. The BF2+-implantation resulted in not only an excellent dopant activation but also a reduced anomalous diffusion due to the formation of amorphous layer and the scarce defects underneath the amorphous/crystalline (a/c) interface. The B+-implanted crystalline samples manifested a poor activation efficiency, and a largely anomalous diffusion at the high temperature with prolonged-time annealing ascribed to much damage induced by the high-dose implant. The B+-implanted pre-Si+-amorphized samples also displayed severely transient-enhanced diffusion in spite of the good dopant activation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351082
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  • 8
    Electronic Resource
    Electronic Resource
    Long wavelength infrared photocurrent study of Si-SiGe heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2039-2041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an experimental long wavelength infrared photocurrent study of a series of a Si-SiGe double-heterostructure samples. The active region is a thin heavily p-type doped SiGe layer, and the photoexcited holes due to free-carrier absorption are collected over the potential barrier resulting from the Si-SiGe valence-band offset. Photocurrent spectra with different cutoff wavelengths are observed for samples with different SiGe compositions, arising from internal photoemission in the Si-SiGe heterojunction. Photocurrents at finite biases and at zero bias (i.e., photovoltaic operation) are studied. Optimizing device parameters may lead to detector structures for large focal plane arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351149
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  • 9
    Electronic Resource
    Electronic Resource
    Infrared transmission and photocurrent study of intersubband transitions in a coupled asymmetrical quantum well structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7560-7563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of an experimental study of intersubband transitions in a coupled asymmetrical double quantum well structure. Infrared transmission and photocurrent spectra are measured at 80 K. One period of the 40-repeat quantum well structure consists of a wide Si-doped GaAs well and a narrow undoped GaAs well separated by a thin AlGaAs barrier. The intersubband transition in the wide well occurs at about 9.5 μm, and, under appropriate bias, an intersubband absorption feature in the narrow well appears at 6.2 μm. The switching between intersubband transitions at 9.5 and 6.2 μm relies on electron transfer between the wells. Our absorption measurements provide direct evidence that up to 35% of the 9.2×1011 cm−2 electrons in the wide well can be transferred into the narrow well. These transferred electrons give rise to a photocurrent peaked at 6.2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349710
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  • 10
    Electronic Resource
    Electronic Resource
    Quantum inductance in resonant tunneling (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2705-2707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical high-frequency model for double-barrier resonant tunneling is formulated. An inductance due to the quantum mechanical resonant lifetime (τ) is confirmed theoretically. The magnitude of the anticipated inductance is τ/G, where G is the conductance of the device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348643
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