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  • 1
    Electronic Resource
    Electronic Resource
    Structure of S on a passivated GaP(100) surface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7567-7569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS), chemical state-specific photoelectron diffraction (XPD), and photoelectric polarization-dependent sulfur K-edge x-ray absorption near-edge structure (XANES) have been used to determine the structure of S on GaP(100) surfaces passivated in a (NH4)2S solution. XPS shows that S forms chemical bonds only with Ga. XPD and XANES measurements show that the Ga—S bond is a well-ordered bridge bond in the [011] azimuth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357032
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  • 2
    Electronic Resource
    Electronic Resource
    Structure of S on passivated GaAs (100) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2932-2934 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS) and E-polarization-dependent S K-edge x-ray absorption near-edge structure (XANES) are used to characterize the chemical structure and site location of S on the (NH4)2S-treated GaAs (100) surface. XPS studies show that S forms chemical bonds with both Ga and As on surfaces treated only with (NH4)2S. After receiving a sufficient water rinse, only Ga—S bonds remain on the surface. Photon E polarization-dependent XANES studies show that S is bridge bonded to Ga in the [011] azimuth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109201
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  • 3
    Electronic Resource
    Electronic Resource
    Structure of S-passivated InP(100)-(1×1) surface (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2773-2775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption near-edge structure (XANES) is used to determine the structure of the S-passivated InP(100)-(1×1) surface. From photon electric polarization-dependent XANES studies, we found that S forms a bridge bond with two In atoms along the [011] direction, with an In-S-In bond angle of 100°. The atomic position of S is found to be close to the tetrahedral site of a phosphorous vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106872
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur passivated InP(100)-(1×1) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Auger electron spectroscopy, low-energy electron diffraction, thermal desorption spectroscopy, and scanning electron microscopy have been utilized to investigate the thermal stability of S-passivated InP(100). S-passivated InP(100) is shown to be thermally stable up to ∼730 K, where S removal and sample evaporation begins. This evaporation results in the formation of a roughened, but clean, InP(100) surface, showing the characteristic (4×2) reconstruction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112662
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanism of the growth of native oxide on hydrogen passivated silicon surfaces (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 446-447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The native oxide growth in water on HF etched, hydrogen passivated silicon surfaces has been studied by 18O labeling techniques, with analysis by secondary ion mass spectrometry, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy. It is shown that (approximately-greater-than)85% of the oxygen in the native oxide originates from H2O and not from dissolved O2. The role of the dissolved O2/H2O couple is to anodically polarize the electrode, thus driving the H2O/Si-oxide reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111124
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  • 6
    Electronic Resource
    Electronic Resource
    S-passivated InP (100)-(1×1) surface prepared by a wet chemical process (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A highly stable crystalline S-passivated InP(100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low-energy electron diffraction studies show a (1×1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High-resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum-cleaved InP surface. A possible structural model is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106890
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  • 7
    Electronic Resource
    Electronic Resource
    Quantitative analysis of low-energy Xe+ ion bombardment damage of Si(100) surfaces using x-ray photoelectron spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 552-554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ x-ray photoelectron spectroscopy has been used to analyze the nature and extent of damage to the Si(100) surfaces bombarded with xenon ions in the energy range 0.25–2 keV. Dramatic changes in the Si 2p core levels were found upon ion bombardment. A curve-fitting analysis of the core level shows that an amorphous silicon overlayer is formed on the Xe+ ion bombarded surface. The results indicate that these low-energy Xe+ ions amorphize the surface in a layer-by-layer manner and that the depth of damage increases rapidly for ion doses between 1013 and 1015 ions cm−2. At about 1015 ions cm−2 the damage depth reaches a saturation for all ion energies studied. The saturated damage depth is found to increase linearly with ion energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113018
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  • 8
    Electronic Resource
    Electronic Resource
    SiO2/Si(100) interface studied by Al Kα x-ray and synchrotron radiation photoelectron spectroscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2941-2943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both synchrotron radiation photoemission spectroscopy (PES) and Al Kα photoelectron spectroscopy (XPS) are used to determine the suboxide distribution at SiO2/Si (100) interfaces. High resolution PES measurements clearly resolved various suboxides with chemical shifts of 0.97, 1.80, and 2.60 eV for Si+1, Si+2, and Si+3, respectively. A total of 9.3×1014 atoms cm−2 of suboxide is found by PES measurements while only 4.2×1014 atoms cm−2 is measured by XPS on the same sample. This discrepancy is neither caused, as previously believed, by a difference in SiO2/Si (100) quality nor by a difference in methodology in data analysis. The possible factors, e.g., electron mean-free path and photoionization cross section, which contribute to the difference between PES and XPS data, are considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110279
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  • 9
    Electronic Resource
    Electronic Resource
    Interfacial segregation during oxidation in O2 at 1173 K of CeO2-coated Fe-20Cr alloys (1990)
    Springer
    Oxidation of metals 33 (1990), S. 19-30 
    Details
    ISSN: 1573-4889
    Keywords: oxidation ; segregation ; impurities ; CeO2-coated Fe-20Cr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The interfacial segregation of sulphur and carbon during the oxidation in 1 torr O2 at 1173 K of Fe-20Cr alloy, which was either free of Ce, alloyed with 0.078 wt.% Ce, or sputter-coated with a 4 nm-thick CeO2 layer, was studied using polyatomic SIMS. Oxidation periods were up to 19 hr. During oxidation, sulphur and carbon accumulated at the alloy-oxide interface region of both uncoated and coated alloys. The amount of segregated sulphur did not vary appreciably with time, whereas carbon increased with time. The total amount of segregants was similar for both uncoated and coated alloys, although the scales formed on the sputter-coated alloy maintained adhesion and were about 10 times thinner than those on the uncoated alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665667
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  • 10
    Electronic Resource
    Electronic Resource
    The influence of grain-boundary segregation of Y in Cr2O3 on the oxidation of Cr metal. II. Effects of temperature and dopant concentration (1990)
    Springer
    Oxidation of metals 34 (1990), S. 201-216 
    Details
    ISSN: 1573-4889
    Keywords: oxidation mechanisms, Cr2O3 ; 18O/SIMS ; grain-boundary segregation ; yttrium implantation ; reactive-element effect
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior of pure Cr and Cr implanted with Y was studied as a function of temperature (900 and 1025°C) and ion-implantation dose (1×1015 and 2×1016 Y ions/cm2). The microstructures of the Cr2O3 scales were affected by both of the variables studied. Yttrium ions segregated at the grain boundaries in the Cr2O3 scales formed on the implanted alloys and the concentration of Y at the grain boundaries decreased with a decrease in the dose of implanted Y. The mechanism of growth of the Cr2O3 scales was altered by the presence of the Y ions at the Cr2O3 grain boundaries only when a critical concentration of Y at the grain boundaries was exceeded.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665015
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