ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Raman spectroscopy is used to measure the frequency shift, symmetry, and activity of long-wavelength optical phonons in several GaAs strained epilayers. The results are compared with theoretical evaluations using the elastic compliances, phonon deformation potentials, and Raman tensors. The effect of growth direction ([001], [111], and [112]) and the substrate nature (Si or CaF2) is analyzed. The importance of nonstandard growth directions, [111] or [112], on residual stress and piezoelectric effect is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357542
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