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  • SOLID-STATE PHYSICS  (5)
  • ELECTRONICS AND ELECTRICAL ENGINEERING  (3)
  • 1990-1994  (8)
  • 1
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    Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layers (1992)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.
    Keywords: SOLID-STATE PHYSICS
    Type: ; : Structure of onboa
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  • 2
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    Electronic structure of light-emitting porous Si (1992)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: Characterization of light-emitting porous Si films with X-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 60; 1004-100
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  • 3
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    Fabrication of IrSi(3)/p-Si Schottky diodes by a molecular beam epitaxy technique (1990)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: IrSi(3)/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 C. Good surface morphology was observed for IrSi(3) layers grown at temperatures below 680 C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14-0.18 eV were determined by activation energy analysis and spectral response measurement.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 56; 2013-201
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  • 4
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    Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors (1990)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 57; 1422-142
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  • 5
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    Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications (1992)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 60; 380-382
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  • 6
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    Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy (1993)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 62; 25; p. 3318-3320.
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  • 7
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    Photoluminescence structure, and composition of laterally anodized porous Si (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: We have studied the photoluminescence (PL), structure, and composition of laterally anodized porous Si. Broad PL peaks were observed centered between about 620-720 nm with strong intensities measured from 500 to 860 nm. Macroscopic variations in PL intensities and peak positions are explained in terms of the structure and anodization process. Structural studies suggest that the PL appears to originate from a multilayered porous Si structure in which the top two layers are amorphous. X-ray diffraction spectra also suggest the presence of a significant amorphous phase. In addition to high concentrations of B and N, we have measured extremely high concentrations much greater than 10 exp 20 cu cm of H, C, O, and F. Our results indicate that laterally anodized porous Si does not fit the crystalline Si quantum wire model prevalent in the literature suggesting that some other structure is responsible for the observed luminescence.
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 139; 11; p. 3363-3372.
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  • 8
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    Microstructural investigations of light-emitting porous Si layers (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: The structural and morphological characteristics of visible-light-emitting porous Si layers produced by anodic and stain etching of single-crystal Si substrates are compared using transmission electron microscopy and atomic force microscopy (AFM). AFM of conventionally anodized, laterally anodized and stain-etched Si layers show that the layers have a fractal-type surface morphology. The anodized layers are rougher than the stain-etched films. At higher magnification 10 nm sized hillocks are visible on the surface. Transmission electron diffraction patterns indicate an amorphous structure with no evidence for the presence of crystalline Si in the near-surface regions of the porous Si layers.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 60; 19, M; 2359-236
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